Search Results - "Punchaipetch, P."

Fabrication and Optical Properties of Erbium-Doped Germanium Nanowires by Wu, J., Punchaipetch, P., Wallace, R. M., Coffer, J. L.

“…A new simple vapor‐phase route to germanium nanowires (see Figure) has been developed that relies on a combination of germanium plus carbon in the original…”
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Epoxy+liquid crystalline epoxy coreacted networks: I. Synthesis and curing kinetics by Punchaipetch, P, Ambrogi, V, Giamberini, M, Brostow, W, Carfagna, C, D'Souza, N.A

“…In situ copolymerization of diglycidyl ether of 4,4′-dihydroxybiphenol (DGE-DHBP) with diglycidyl ether of bisphenol F (DGEBP-F) networks using an anhydride…”
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Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide by Punchaipetch, P, Pant, G, Quevedo-Lopez, M, Zhang, H, El-Bouanani, M, Kim, M.J, Wallace, R.M, Gnade, B.E

“…We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron…”
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Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon by Pezzi, R. P., Miotti, L., Bastos, K. P., Soares, G. V., Driemeier, C., Baumvol, I. J. R., Punchaipetch, P., Pant, G., Gnade, B. E., Wallace, R. M., Rotondaro, A., Visokay, J. M., Chambers, J. J., Colombo, L.

“…Hydrogen and deuterium incorporation into nitrided and non-nitrided hafnium silicate films on Si during thermal annealing in H1- and H2-containing atmospheres…”
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Low-temperature deposition of hafnium silicate gate dielectrics by Punchaipetch, P., Pant, G., Quevedo-Lopez, M.A., Yao, C., El-Bouanani, M., Kim, M.J., Wallace, R.M., Gnade, B.E.

“…The physical and electrical properties of hafnium silicate (HfSi/sub x/O/sub y/) films produced by low-temperature processing conditions (/spl les/150/spl…”
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Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics by DRIEMEIER, C, BASTOS, K. P, SOARES, G. V, MIOTTI, L, PEZZI, R. P, BAUMVOL, I. J. R, PUNCHAIPETCH, P, PANT, G, GNADE, B. E, WALLACE, R. M

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Low temperature deposition of hafnium silicate gate dielectrics for TFTs on plastic substrates by Gnade, B.E., Pant, G., Punchaipetch, P., Wallace, R.M.

“…Summary form only given. Hafnium silicate (HfSi/sub x/O/sub y/) is being studied as a potential candidate material to replace SiO/sub 2/ as the gate dielectric…”
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Epoxy+liquid crystalline epoxy coreacted networks: II. Mechanical properties by Punchaipetch, Prakaipetch, Ambrogi, Veronica, Giamberini, Marta, Brostow, Witold, Carfagna, Cosimo, D'Souza, Nandika Anne

“…The effect of coreacting diglycidyl ether of bisphenol F (DGEBP-F) with diglycidyl ether of 4,4′-dihydroxybiphenol (DGE-DHBP) on mechanical properties is…”
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Low temperature UV/ozone oxidation formation of HfSiON gate dielectric by Pant, Gaurang, Punchaipetch, Prakaipetch, Kim, M.J., Wallace, Robert M., Gnade, Bruce E.

“…Physical and electrical properties of hafnium silicon oxynitride (HfSi x O y N z ) dielectric films prepared by UV ozone oxidation of hafnium silicon nitride…”
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Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing by Punchaipetch, Prakaipetch, Miyashita, Makoto, Uraoka, Yukiharu, Fuyuki, Takashi, Sameshima, Toshiyuki, Horii, Sadayoshi

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Epoxy+liquid crystalline epoxy corrected networks: I. Synthesis and curing kinetics by Punchaipetch, P, Ambrogi, V, Giamberini, M, Brostow, W, Carfagna, C, D'Souza, N A

“…In situ copolymerization of diglycidyl ether of 4,4'-dihydroxybiphenol (DGE-DHBP) with diglycidyl ether of bisphenol F (DGEBP-F) networks using an anhydride…”
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Electron Injection into Si Nanodot Fabricated by Side-Wall Plasma Enhanced Chemical Vapor Deposition by Ichikawa, Kazunori, Punchaipetch, Prakaipetch, Yano, Hiroshi, Hatayama, Tomoaki, Uraoka, Yukiharu, Fuyuki, Takashi, Takahashi, Eiji, Hayashi, Tsukasa, Ogata, Kiyoshi

“…We have fabricated a floating gate memory using Si nano-crystal dot on thermal SiO 2 by a new method of side-wall plasma-enhanced chemical vapor deposition…”
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Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation by Punchaipetch, Prakaipetch, Pant, Gaurang, Kim, M. J., Wallace, Robert M., Gnade, Bruce E.

“…Physical and electrical properties of hafnium silicate ( HfSi x O y ) dielectric films prepared by room-temperature UV/ozone ( O 3 ) oxidation of hafnium…”
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Mechanical properties of glass fiber composites with an epoxy resin modified by a liquid crystalline epoxy by Punchaipetch, Prakaipetch, D'Souza, Nandika Anne, Brostow, Witold, Smith Sr, James T.

“…The effect of liquid crystalline networks on epoxy + glass fiber composites is investigated. The matrix obtained from in‐situ curing of liquid crystalline (LC)…”
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Effects of glass fibers and polypropylene/glass fiber hybrid fibers on the kinetics and mechanical properties of epoxy composites by Punchaipetch, Prakaipetch, D'Souza, Nandika Anne, Brostow, Witold, Akinay, Ali E., Reed, Jonathan

“…Curing reactions of diglycidyl ether of bisphenol F (DGEBP‐F) and pre‐catalyzed methyltetrahydrophthalic anhydride (MTHPA) with benzyl triethyl ammonium…”
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Low temperature nitridation of PLCVD HfSi/sub x/O/sub y/ gate dielectrics using nitrogen radicals by Nakamura, H., Punchaipetch, P., Yano, H., Hatayama, T., Uraoka, Y., Fuyuki, T., Horii, S.

“…The effect of nitrogen incorporation on polyatomic layer chemical vapor deposition (PLCVD) HfSi/sub x/O/sub y/ films was investigated. The nitrogen engineering…”
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