Search Results - "Puigdollers, J."

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  1. 1

    Reversibility of humidity effects in pentacene based organic thin-film transistor: Experimental data and electrical modeling by Boukhili, W., Mahdouani, M., Erouel, M., Puigdollers, J., Bourguiga, R.

    Published in Synthetic metals (01-01-2015)
    “…The degradation of saturation mobility versus measurement conditions. [Display omitted] •The electrical stability of the pentacene-TFTs was degraded by…”
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    Journal Article Publication
  2. 2

    Elimination of Interface Energy Barriers Using Dendrimer Polyelectrolytes with Fractal Geometry by Ros, E., Tom, T., Ortega, P., Martin, I., Maggi, E., Asensi, J. M., López-Vidrier, J., Saucedo, E., Bertomeu, J., Puigdollers, J., Voz, C.

    Published in ACS applied materials & interfaces (14-06-2023)
    “…In this work we study conjugated polyelectrolyte (CPE) films based on polyamidoamine (PAMAM) dendrimers of generations G1 and G3. These fractal macromolecules…”
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    Journal Article
  3. 3

    Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer by García-Hernansanz, R., García-Hemme, E., Montero, D., Olea, J., del Prado, A., Mártil, I., Voz, C., Gerling, L.G., Puigdollers, J., Alcubilla, R.

    Published in Solar energy materials and solar cells (01-10-2018)
    “…Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of…”
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    Journal Article Publication
  4. 4

    Temperature dependence of the electrical properties of organic thin-film transistors based on tetraphenyldibenzoperiflanthene deposited at different substrate temperatures: Experiment and modeling by Boukhili, W., Mahdouani, M., Bourguiga, R., Puigdollers, J.

    Published in Microelectronic engineering (25-01-2016)
    “…A series of inverted-staggered (top contact) p-channel organic thin film transistors based on small molecule tetraphenyldibenzoperiflanthene (DBP) as an active…”
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  5. 5

    Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells by Garcia-Hernansanz, R., Perez-Zenteno, F., Duarte-Cano, S., Caudevilla, D., Algaidy, S., Garcia-Hemme, E., Olea, J., Pastor, D., del Prado, A., Andres, E. San, Martil, I., Ros, E., Puigdollers, J., Ortega, P., Voz, C.

    Published in IEEE journal of photovoltaics (01-09-2023)
    “…In this article, we study the effect of the inversion charge ( Q inv ) in a solar cell based on the hole-selective characteristic of substoichiometric…”
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    Journal Article
  6. 6

    Accurate modeling and parameter extraction method for organic TFTs by Estrada, M., Cerdeira, A., Puigdollers, J., Reséndiz, L., Pallares, J., Marsal, L.F., Voz, C., Iñiguez, B.

    Published in Solid-state electronics (01-06-2005)
    “…In this paper we demonstrate the applicability of the unified model and parameter extraction method (UMEM), previously developed by us, to organic thin film…”
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  7. 7

    Vertically aligned ZnO nanorod array/CuO heterojunction for UV detector application by Vikas, L. S., Sanal, K. C., Jayaraj, M. K., Antony, A., Puigdollers, J.

    “…Vertically aligned ZnO nanorod array (ZNA) was deposited by electrodeposition technique over glass substrate coated with Al doped ZnO (AZO). The…”
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  8. 8

    Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films by Martı́n, I., Vetter, M., Orpella, A., Puigdollers, J., Cuevas, A., Alcubilla, R.

    Published in Applied physics letters (01-10-2001)
    “…Excellent passivation properties of intrinsic amorphous silicon carbide (a-SiCx:H) films deposited by plasma enhanced chemical vapor deposition on…”
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    Journal Article
  9. 9

    Density-of-states in pentacene from the electrical characteristics of thin-film transistors by Puigdollers, J., Marsal, A., Cheylan, S., Voz, C., Alcubilla, R.

    Published in Organic electronics (01-08-2010)
    “…In this work the density-of-states in the gap of pentacene is calculated from the electrical characteristics of thin-film transistors measured at different…”
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  10. 10

    Analysis of the dynamic short-circuit resistance in organic bulk-heterojunction solar cells: relation to the charge carrier collection efficiency by Voz, C., Puigdollers, J., Asensi, J.M., Galindo, S., Cheylan, S., Pacios, R., Ortega, P., Alcubilla, R.

    Published in Organic electronics (01-06-2013)
    “…[Display omitted] •This work studies the charge carrier collection in organic BHJ solar cells.•Recombination losses determine the I–V curve dynamic resistance…”
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  11. 11
  12. 12

    Experimental determination of base resistance contribution for point-like contacted c-Si solar cells using impedance spectroscopy analysis by Orpella, A., Martín, I., López-González, J.M., Ortega, P., Muñoz, J., Sinde, D.C., Voz, C., Puigdollers, J., Alcubilla, R.

    Published in Solar energy materials and solar cells (01-10-2015)
    “…One of the most common strategies in high-efficiency crystalline silicon (c-Si) solar cells for the rear surface is the combination of a dielectric passivation…”
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    Journal Article Publication
  13. 13

    Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors by Marsal, A., Carreras, P., Puigdollers, J., Voz, C., Galindo, S., Alcubilla, R., Bertomeu, J., Antony, A.

    Published in Thin solid films (31-03-2014)
    “…In this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent…”
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    Journal Article Conference Proceeding Publication
  14. 14

    Copper phthalocyanine thin-film transistors with polymeric gate dielectric by Puigdollers, J., Voz, C., Fonrodona, M., Cheylan, S., Stella, M., Andreu, J., Vetter, M., Alcubilla, R.

    Published in Journal of non-crystalline solids (15-06-2006)
    “…Copper phthalocyanine (CuPc) thin-film transistors have been fabricated using polymethyl methacrylate (PMMA) as gate dielectric. A bottom gate, staggered…”
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    Journal Article Conference Proceeding
  15. 15

    N-type PTCDI―C13H27 thin-film transistors deposited at different substrate temperature by PUIGDOLLERS, J, PIRRIERA, M. Della, MARSAL, A, ORPELLA, A, CHEYLAN, S, VOZ, C, ALCUBILLA, R

    Published in Thin solid films (01-10-2009)
    “…N-type organic thin-film transistors based on N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide have been fabricated by thermal evaporation at different…”
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    Conference Proceeding Journal Article Publication
  16. 16

    Pentacene thin-film transistors with polymeric gate dielectric by Puigdollers, J., Voz, C., Orpella, A., Quidant, R., Martı́n, I., Vetter, M., Alcubilla, R.

    Published in Organic electronics (01-03-2004)
    “…Pentacene thin-film transistors have been obtained using polymethyl methacrylate as a gate dielectric. The maximum process temperature was 170 °C, which…”
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  17. 17

    Comparison between the density-of-states of picene transistors measured in air and under vacuum by Voz, C., Marsal, A., Moreno, C., Puigdollers, J., Alcubilla, R.

    Published in Synthetic metals (01-01-2012)
    “…► Picene OTFTs on polystyrene dielectric present high field-effect mobilities in air (1.3cm2V−1s−1). ► Density-of-states in the gap of picene was calculated by…”
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    Journal Article Conference Proceeding Publication
  18. 18

    Low level optical absorption measurements on organic semiconductors by Stella, M., Voz, C., Puigdollers, J., Rojas, F., Fonrodona, M., Escarré, J., Asensi, J.M., Bertomeu, J., Andreu, J.

    Published in Journal of non-crystalline solids (15-06-2006)
    “…The optical absorption of n-type (C60 and PTCDA) and p-type (CuPc and pentacene) organic semiconductors is investigated by optical transmission and…”
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    Journal Article Conference Proceeding
  19. 19

    Experimental observation of oxygen-related defect state in pentacene thin films by Nádaždy, V., Durný, R., Puigdollers, J., Voz, C., Cheylan, S., Gmucová, K.

    Published in Applied physics letters (26-02-2007)
    “…The authors report on a metastable defect observed in pentacene thin films. The defect, which is characterized by a hole trap at Ev+0.6eV and attempt-to-escape…”
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  20. 20

    Improvement of crystalline silicon surface passivation by hydrogen plasma treatment by Martı́n, I., Vetter, M., Orpella, A., Voz, C., Puigdollers, J., Alcubilla, R., Kharchenko, A. V., Roca i Cabarrocas, P.

    Published in Applied physics letters (01-03-2004)
    “…A completely dry low-temperature process has been developed to passivate 3.3 Ω cm p-type crystalline silicon surface with excellent results. Particularly, we…”
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    Journal Article