Search Results - "Puchtler, T. J."

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures by Massabuau, F. C.-P., Sahonta, S.-L., Trinh-Xuan, L., Rhode, S., Puchtler, T. J., Kappers, M. J., Humphreys, C. J., Oliver, R. A.

“…In a wide variety of InGaN/GaN quantum well (QW) structures, defects are observed which consist of a trench partially or fully enclosing a region of the QW…”
Get full text

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot by Kocher, C. C., Puchtler, T. J., Jarman, J. C., Zhu, T., Wang, T., Nuttall, L., Oliver, R. A., Taylor, R. A.

“…Nitride quantum dots are well suited for the deterministic generation of single photons at high temperatures. However, this material system faces the challenge…”
Get full text

Properties of trench defects in InGaN/GaN quantum well structures by Sahonta, S.-L., Kappers, M. J., Zhu, D., Puchtler, T. J., Zhu, T., Bennett, S. E., Humphreys, C. J., Oliver, R. A.

“…The structural and optical properties of trench defects, which are poorly understood yet commonly occurring defects observed on the surfaces of InGaN multiple…”
Get full text

Mitigating the photocurrent persistence of single ZnO nanowires for low noise photodetection applications by Girard, J. ph, Giraudet, L, Kostcheev, S, Bercu, B, Puchtler, T J, Taylor, R A, Couteau, C

“…Nanotechnology 29 (2018) 505207 (9pp) In this work, we investigate the optoelectronic properties of zinc oxide (ZnO) nanowires, which are good candidates for…”
Get full text

Nitride Single Photon Sources by Zhu, T., Jarman, J. C., Ren, Christopher X., Tang, Fengzai, Kocher, C. C., Puchtler, T. J., Reid, Benjamin P. L., Wang, T., Patra, Saroj K., Schulz, Stefan, Taylor, Robert A., Oliver, R. A.

“…Single photon sources are a key enabling technology for quantum communications, and in the future more advanced quantum light sources may underpin other…”
Get full text