Search Results - "Pucel, R.A."

Microwave and millimeter-wave integrated circuits by Niehenke, E.C., Pucel, R.A., Bahl, I.J.

“…This historical review is divided into three sections: microwave integrated circuits (MICs), monolithic microwave integrated circuits (MMICs), and MIC and…”
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A Monolithic GaAs 1-13-GHz Traveling-Wave Amplifier by Ayasli, Y., Mozzi, R.L., Vorhaus, J.L., Reynolds, L.D., Pucel, R.A.

“…This paper describes a monolithic GaAs traveling-wave amplifier with 9-dB gain and +-1-dB gain flatness in the 1-13-GHz frequency range. The circuit is…”
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Microstrip Propagation on Magnetic Substrates - Part I: Design Theory by Pucel, R.A., Masse, D.J.

“…Formulas and graphs are presented for the effective relative permeability and the filling factors of magnetic substrates in microstrip. Both the propagation…”
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Noise characteristics of gallium arsenide field-effect transistors by Statz, H., Haus, H.A., Pucel, R.A.

“…Small signal and noise characteristics for GaAs field-effect transistors are derived with the saturated drift velocity of the carriers underneath the gate…”
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A new low-loss high-k temperature-compensated dielectric for microwave applications by Masse, D.J., Pucel, R.A., Readey, D.W., Maguire, E.A., Hartwig, C.P.

“…A new dielectric material has been developed with a temperature-stable dielectric constant of 38. The low loss exhibited at microwave frequencies, the…”
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A monolithic GaAs 1 - 13-GHz traveling-wave amplifier by Ayasli, Y., Mozzi, R.L., Vorhaus, J.L., Reynolds, L.D., Pucel, R.A.

“…This paper describes a monolithic GaAs traveling-wave amplifier with 9-dB gain and ± 1-dB gain flatness in the 1-13-GHz frequency range. The circuit is…”
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Correction to "Losses in Microstrip" (Correspondence) by Pucel, R.A., Masse, D.J., Hartwig, C.P.

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GaAs FET device and circuit simulation in SPICE by Statz, H., Newman, P., Smith, I.W., Pucel, R.A., Haus, H.A.

“…We have developed a GaAs FET model suitable for SPICE Circuit simulations. The dc equations are accurate to about 1 percent of the maximum drain current. A…”
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Design Considerations for Monolithic Microwave Circuits by Pucel, R.A.

“…Monolithic microwave integrated circuits based on silicon-on-sapphire (SOS) and gallium arsenide technologies are being considered seriously as viable…”
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A general noise de-embedding procedure for packaged two-port linear active devices by Pucel, R.A., Struble, W., Hallgren, R., Rohde, U.L.

“…A method based on the noise correlation technique and its applications is described. The package, which need not be reciprocal, may consist of an arbitrary…”
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Correction to "Pumping condition for parametric gain with a nonlinear immitance element" by Pucel, R.A.

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Measurement of the Conversion Conductance of Esaki Mixer Diodes (Correspondence) by Pucel, R.A.

“…In order to compare the theoretically predicted and the experimentally observed behavior of frequency converters using Esaki diodes, it is necessary to…”
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An exact expression for the noise resistance R/sub n/ for the Hawkins bipolar noise model by Pucel, R.A., Rohde, U.L.

“…A simple, but exact formula for R/sub n/ has been presented for the Hawkins noise model of the bipolar transistor. This formula can be used in conjunction with…”
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A bias and temperature dependent noise model of heterojunction bipolar transistors by Pucel, R.A., Daniel, T., Kain, A., Tayrani, R.

“…A bias and temperature dependent HBT noise model based on an extension of the van der Ziel noise theory is presented. An extrapolation technique is applied to…”
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Near-Carrier Noise in FET Oscillators by Pucel, R.A., Curtis, J.

“…An exhaustive study is presented of the relation of near-carrier FM noise of FET oscillators to baseband noise, gate technology, surface passivation, channel…”
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Modeling via hole grounds in microstrip by Goldfarb, M.E., Pucel, R.A.

“…A simple model for a cylindrical via hole in a microstrip is presented. The model is based on a modification of the inductance of a cylindrical conductor as…”
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The GaAs FET Oscillator- Its Signal and Noise Performance by Pucel, R.A.

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On charge nonconservation in FET's by Smith, I.W., Statz, H., Haus, H.A., Pucel, R.A.

“…It is shown that source and drain charges are not state variables in an FET, especially for source-drain voltages near zero. This behavior, observed in the…”
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Performance of GaAs MESFET Mixers at X Band by Pucel, R.A., Masse, D., Bera, R.

“…A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating…”
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Losses in Microstrip by Pucel, R.A., Masse, D.J., Hartwig, C.P.

“…Expressions are derived for the conductor loss in microstrip transmission lines. The formulas take into account the finite thickness of the strip conductor and…”
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