Search Results - "Przybylińska, H"
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1
Role of Zr3+ in excitation of Eu3+ ions in stabilized ZrO2:Eu nanoparticles
Published in Journal of luminescence (01-09-2024)“…Microwave hydrothermal technique has been applied to crystallize ZrO2 nanoparticles with the sizes below 10 nm and activated with Eu. Trivalent europium ions…”
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2
Evidence of multicenter structure of cerium ions in gadolinium gallium garnet crystals studied by infrared absorption spectroscopy
Published in Physical review. B, Condensed matter and materials physics (16-01-2013)“…Low temperature, infrared absorption spectra of gadolinium gallium garnet crystals doped with Ce are presented. In the region of intraconfigurational…”
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3
Electronic structure of Ce3+ multicenters in yttrium aluminum garnets
Published in Applied physics letters (17-06-2013)“…Low temperature, infrared, and visible-ultraviolet absorption spectra of yttrium aluminum garnet (YAG) bulk crystals and epitaxial layers doped with Ce are…”
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4
Spectroscopic properties and martensitic phase transition of Y4Al2O9:Ce single crystals under high pressure
Published in Acta materialia (15-02-2019)“…High pressure studies of monoclinic yttrium aluminum oxide single crystals (Y4Al2O9 -YAM) doped with Ce3+ ions grown by micro-pulling-down method are reported…”
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5
Electronic structure of Ce3+ in yttrium and lutetium orthoaluminate crystals and single crystal layers
Published in Journal of alloys and compounds (05-11-2017)“…Low temperature infrared absorption spectra of yttrium orthoaluminate and lutetium orthoaluminate bulk crystals and liquid phase epitaxy grown single…”
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6
Rare-earth antisites in lutetium aluminum garnets: Influence on lattice parameter and Ce3+ multicenter structure
Published in Optical materials (01-07-2014)“…•The evidences of multisite structure of Ce3+ dopant in LuAG scintillation material.•The evidences of the lattice expansion of LuAG under influence of RE…”
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7
Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers
Published in Journal of luminescence (01-08-2015)“…Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers…”
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8
Magnetic and Structural Studies of GeMnSnTe Epitaxial Layers
Published in Acta physica Polonica, A (01-08-2017)Get full text
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9
Magnetic properties of a new spintronic material—GaN:Fe
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-01-2006)“…We report on metal-organic chemical vapour deposition growth of GaN:Fe and its characterization by means of high-resolution X-ray diffraction, secondary ion…”
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10
Photoluminescence and Hall studies of GaN:Fe and (Ga,Fe)N:Mg layers
Published in Physica status solidi. A, Applications and materials science (01-01-2007)“…Temperature dependent photoluminescence (PL) in the ultraviolet (UV) regime and Hall measurements at room temperature have been performed on…”
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Journal Article Conference Proceeding -
11
Photoluminescence properties of Er doped GaN
Published in Physica. B, Condensed matter (01-12-2001)“…The Er 3+ photoluminescence (PL) near 1.54 μm and PL excitation in Er-implanted GaN was investigated. We have found three different classes of optically active…”
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12
Microscopic structure of Er-related optically active centers in crystalline silicon
Published in Physical review letters (14-02-2003)“…A successful observation and analysis of the Zeeman effect on the lambda approximately 1.54 microm photoluminescence band in Er-doped crystalline MBE-grown…”
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13
Site-selective spectroscopy of erbium in wide band gap semiconductors
Published in Physica status solidi. A, Applications and materials science (01-01-2008)“…In this paper results of site‐selective spectroscopy of Er3+ ions in wide band gap semiconductors, such as cubic and hexagonal GaN, and 6H SiC are presented…”
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Journal Article Conference Proceeding -
14
Optical properties of a single type of optically active center in Si ∕ Si : Er nanostructures
Published in Physical review. B, Condensed matter and materials physics (01-09-2004)Get full text
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15
Defect-mediated and resonant optical excitation of Er3+ ions in silicon-rich silicon oxide
Published in Applied physics letters (17-11-2003)“…Sensitization of the 4I13/2–4I15/2 Er3+ luminescence at 1.54 μm in silicon-rich silicon oxide (SRSO) is studied in the blue-green range. We show that defects…”
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16
Optical properties of a single Er center in GaN
Published in Optical materials (01-05-2006)“…Photoluminescence (PL) spectra near 1.5 μm of Er 3+ implanted into GaN are usually very complex, due to the number of different centers formed depending on Er…”
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Journal Article Conference Proceeding -
17
Magnetic-Field-Induced Ferroelectric Polarization Reversal in the Multiferroic Ge 1 − x Mn x Te Semiconductor
Published in Physical review letters (01-01-2014)Get full text
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18
Optically active erbium centers in silicon
Published in Physical review. B, Condensed matter (15-07-1996)Get full text
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19
Compensation mechanisms in magnesium doped GaN
Published in Physica status solidi. A, Applied research (01-01-2004)“…Compensation processes in magnesium doped GaN epilayers and bulk samples are studied. We demonstrate enhancement of potential fluctuations in Mg doped samples,…”
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Journal Article Conference Proceeding -
20
Ambient and high pressure spectroscopy of Ce^3+ doped yttrium gallium garnet
Published in Optical materials express (01-08-2015)Get full text
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