Search Results - "Prudaev, I. A."

Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers by Verkholetov, M. G., Prudaev, I. A.

“…We report on the results of investigations of carrier transport in GaAs structures doped with the EL2 deep donor centers and Cr acceptor levels for ionizing…”
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Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures by Prudaev, A. I., Verkholetov, M. G.

“…The results of a study of carrier transfer and recharging of deep levels in semiconductor structures for ionizing radiation detectors are presented…”
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Manufacturing and Properties of Ferromagnetic Aluminum Nitride Doped with Nonmagnetic Impurities by Khludkov, S. S., Prudaev, I. A., Root, L. O., Tolbanov, O. P., Ivonin, I. V.

“…The review of literature on AlN doping with nonmagnetic impurities (elements of groups I, II, III, and IV of both subgroups and rare earth elements), providing…”
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Formation of Dislocations in the Process of Impurity Diffusion in GaAs by Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P., Ivonin, I. V.

“…A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion…”
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Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics by Khludkov, S. S., Prudaev, I. A., Root, L. O., Tolbanov, O. P., Ivonin, I. V.

“…The overview of scientific literature on the electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based…”
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Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs by Prudaev, I. A., Verkholetov, M. G., Koroleva, A. D., Tolbanov, O. P.

“…Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n + –π–ν– n structures with…”
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Photoelectrical characteristics of TiO2-N-SI heterostructures by Kalygina, V. M., Egorova, I. S., Prudaev, I. A., Tolbanov, O. P., Atuchin, V. V.

“…ABSTRACT The TiO2 thin films have been deposited onto Si epi‐layer‐covered Si substrates by magnetron sputtering of a TiO2 target. The influence of thermal…”
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Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron by Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

“…The data on the electrical, structural, and magnetic properties of the iron doped gallium arsenide obtained by various methods are systematized. The conditions…”
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Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam by Burachenko, A. G., Beloplotov, D. V., Prudaev, I. A., Sorokin, D. A., Tarasenko, V. F., Tolbanov, O. P.

“…The spectra and amplitude–time characteristics of the radiation of studied Sn and Fe-doped Ga 2 O 3 crystals excited with a runaway electron beam and an…”
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Internal Quantum Efficiency of Led Structures at Various Charge Carrier Distributions Over InGaN/GaN Quantum Wells by Romanov, I. S., Prudaev, I. A., Kopyev, V. V.

“…The results of studying the effect of the thickness of GaN barrier layers in the active region of LED structures with InGaN/GaN quantum wells on the internal…”
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Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN by Romanov, I. S., Prudaev, I. A., Brudnyi, V. N.

“…The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p -GaN…”
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Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties by Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

“…An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is…”
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On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes by Prudaev, I. A., Kopyev, V. V., Romanov, I. S., Oleynik, V. L.

“…The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The…”
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Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures by Kalygina, V. M., Egorova, I. M., Novikov, V. A., Prudaev, I. A., Tolbanov, O. P.

“…The effect of annealing in argon and oxygen plasma on the I–V characteristics and photoresponse of TiO 2 –Si structures is investigated. The titanium oxide…”
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Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering by Lygdenova, T. Z., Kalygina, V. M., Novikov, V. A., Prudaev, I. A., Tolbanov, O. P., Tyazhev, A. V.

“…The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the…”
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Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide by Kalygina, V. M., Petrova, Yu. S., Prudaev, I. A., Tolbanov, O. P.

“…We present the results of studying the capacitance-voltage and conductance-voltage characteristics of the GaxOy / GaAs -based metal – oxide – semiconductor…”
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A Solid-State Sub-Nanosecond Microwave Switch by Avdochenko, B. I., Prudaev, I. A., Tolbanov, O. P., Chumerin, P. Yu, Yurchenko, V. I.

“…A problem is discussed of the microwave generator power switching with the use of high-speed subnanosecond avalanche diodes. A scheme of the measurement setup,…”
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Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells by Prudaev, I. A., Golygin, I. Yu, Shirapov, S. B., Romanov, I. S., Khludkov, S. S., Tolbanov, O. P.

“…The experimental current-voltage characteristics and dependences of the external quantum yield on the current density of light-emitting diodes based on…”
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Effect of a Short-Period InGaN/GaN Superlattice on the Efficiency of Blue LEDs at High Level of Optical Pumping by Prudaev, I. A., Romanov, I. S., Kopyev, V. V., Brudnyi, V. N., Marmalyuk, A. A., Kureshov, V. A., Sabitov, D. R., Mazalov, A. V.

“…We present the results of experimental studies of internal quantum efficiency of photoluminescence of blue LED heterostructures based on multiple In x Ga 1–x…”
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Diffusion and solubility of electrically active iron atoms in gallium arsenide by Prudaev, I. A., Khludkov, S. S.

“…Iron diffusion in GaAs at arsenic pressure 1 atm is studied. The temperature dependences of the diffusion coefficient and solubility of electrically active…”
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