Search Results - "Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124)"
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Micromechanical circuits for communication transceivers
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…Micromechanical (or /spl mu/mechanical) communication circuits fabricated via IC-compatible MEMS technologies and capable of low-loss filtering, mixing,…”
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The effects of a ground shield on spiral inductors fabricated in a silicon bipolar technology
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…The frequency dependence of the model parameters of patterned ground shield (PGS) inductors in large part is explained as a consequence of modeling a…”
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A comprehensive bipolar avalanche multiplication compact model for circuit simulation
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…In this paper, a new comprehensive bipolar transistor avalanche multiplication model is presented that takes into account the finite thickness of the epilayer,…”
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ESD protection for BiCMOS circuits
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…We introduce two new ESD protection elements suitable for use in BiCMOS process technology-a grounded gate NMOS built inside a junction-isolated p-well which…”
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Complementary 25 V LDMOS for analog applications based on 0.6 /spl mu/m BiCMOS technology
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…A complementary 25 V LDMOS for analog applications based on 0.6 /spl mu/m BiCMOS technology has been developed. The n-channel LDMOS has two-step shallow…”
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A 0.35 /spl mu/m SiGe BiCMOS process featuring a 80 GHz f/sub max/ HBT and integrated high-Q RF passive components
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…A SiGe HBT, fabricated by means of selective epitaxy, and high-Q RF passive components have been integrated into a 0.35 /spl mu/m BiCMOS process. The HBT…”
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Trench termination technique with vertical JTE for 6 kV devices
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…A new termination technique using deep trenches and vertical JTE (junction termination extension) is reported. The device breakdown voltage is increased to…”
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III-V HBTs for microwave applications: technology status and modeling challenges
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…This paper provides an overview of GaAs HBT applications to microwave power amplifiers, and discusses associated technology challenges, and modeling issues…”
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Integration of high-voltage bipolars into a 0.35 /spl mu/m CMOS based smart power platform
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…This paper describes the integration of high-voltage and high-performance bipolars into a 0.35 /spl mu/m smart power technology through advanced high-energy…”
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A low-cost modular SiGe BiCMOS technology and analog passives for high-performance RF and wide-band applications
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…We present a low-cost 0.25 /spl mu/m SiGe BiCMOS technology that is being manufactured in an 8-inch production line. The technology includes modules for…”
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A 0.15 /spl mu/m/0.6 dB-NF/sub min/ RF BiCMOS technology using cobalt silicide ground shields
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…This paper describes a newly developed cobalt silicide ground shield without any additional process step for a 0.15 /spl mu/m RF BiCMOS. By using this ground…”
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A cost-effective 0.25 /spl mu/m L/sub eff/ BiCMOS technology featuring graded-channel CMOS (GCMOS) and a quasi-self-aligned (QSA) NPN for RF wireless applications
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…A cost-effective 0.25 /spl mu/m L/sub eff/ graded-channel BiCMOS technology is reported. GCMOS devices offer superior transconductance and short-channel…”
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Future developments and technology options in cellular phone power amplifiers: from power amplifier to integrated RF front-end module
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…Millions of cellular phone power amplifiers (PA) are produced every day worldwide using a great diversity of technologies. This is true both for the active…”
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Extraction of the base-collector capacitance splitting along the base resistance using HF measurements [bipolar transistors]
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…This paper presents an efficient method to evaluate with accuracy the partitioning of the base-collector depletion capacitance through the base resistance by…”
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A wireless R&D perspective on RF/IF passives integration
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…Wireless handset evolution has been, and continues to be, driven by a combination of developments in largely separate but interacting technologies. The…”
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11 GHz SiGe circuits for ultra wideband radar
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…Transmitter and receiver circuits operating at 11 GHz system clock rate are described. These circuits, fabricated in a 0.8 /spl mu/m SiGe-HBT technology, are…”
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A comparison of modern power device concepts for high voltage applications: field stop-IGBT, compensation devices and SiC devices
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…This article presents a comparison of recently introduced device concepts like the CoolMOS/sup TM/ to new promising approaches such as the field-stop IGBT and…”
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Weak scaling of thermal resistance in AlGaAs-GaAs heterojunction bipolar transistors
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…Measured thermal resistance in AlGaAs-GaAs HBTs varies weakly with emitter area and geometry. 3D finite element modelling shows that the origin is the finite…”
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Transistor noise in SiGe HBT RF technology
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…This work presents experimental and modeling results of device noise in SiGe HBT RF technology. Two major concerns for RF applications are examined: (1) the RF…”
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ESD robustness of a BiCMOS SiGe technology
Published in Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124) (2000)“…High current characterization of epitaxial-base pseudomorphic silicon germanium heterojunction npn bipolar transistors (HBT) for evaluation of the…”
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