Search Results - "Proceedings of International Reliability Physics Symposium"

Relation between yield and reliability of integrated circuits: experimental results and application to continuous early failure rate reduction programs by Kuper, F., van der Pol, J., Ooms, E., Johnson, T., Wijburg, R., Koster, W., Johnston, D.

“…The relation between yield and early failures as encountered in the field was investigated with several high volume IC's manufactured in several processes. A…”
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Non-uniform current flow through thin oxide after Fowler-Nordheim current stress by Yamada, S., Amemiya, K., Yamane, T., Hazama, H., Hashimoto, K.

“…Non-uniform current flow after Fowler-Nordheim current stress has been discussed. In a large thin oxide area, there are certain fixed spot areas which can trap…”
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Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations by Amerasekera, A., Ramaswamy, S., Mi-Chang Chang, Duvvury, C.

“…A circuit-level simulator for ESD and EOS is presented. Equations for modeling the high current behavior of NMOS and PMOS transistors have been developed and…”
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Limitations on oxide thicknesses in flash EEPROM applications by Runnion, E.F., Gladstone, S.M., Scott, R.S., Dumin, D.J., Lie, L., Mitros, J.

“…Oxides used in EEPROMs have severe limitations placed on leakage currents due to long data retention time requirements. During write/erase (W/E) cycling,…”
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New Laser Beam Neating Methods Applicable to Fault Localization and Defect Detection in VLSI Devices by Nikawa, K., Inoue, S.

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Reliability tests and failure analysis for quality improvement in 1.5 /spl mu/m Fabry-Perot lasers by Montangero, P., Azzini, G.A., Crovato, R., Ricci, L., Serra, L.

“…The quality of 1.5 /spl mu/m Fabry-Perot lasers for application in the optical access network has been improved by lifetests and failure analysis on two groups…”
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Investigation of stress singularity fields and stress intensity factors for cracks [IC packages] by Amagai, M.

“…The reliability of semiconductor devices and packages used in microelectronics is compromised by interfacial delamination and homogenous cracking that is…”
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A failure rate based methodology for determining the maximum operating gate electric field, comprehending defect density and burn-in by Hunter, W.R.

“…We develop a new and accurate methodology for determining the maximum allowed operating gate electric field E/sub max/. It is based on achieving a failure rate…”
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iTEM: a chip-level electromigration reliability diagnosis tool using electrothermal timing simulation by Chin-Chi Teng, Yi-Kan Cheng, Rosenbaum, E., Sung-Mo Kang

“…In this paper, we present a new electromigration reliability diagnosis tool (iTEM) for CMOS VLSI circuits. Unlike previous electromigration reliability tools,…”
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Hydrogen Passivation of Boron Acceptors and Long-Term Breakdown Voltage Instability in N/sup +//P Su by Ciappa, M., Malberti, P., Birolini, A.

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A new oxide degradation mechanism for stresses in the Fowler-Nordheim tunneling regime by Martin, A., Suehle, J.S., Chaparala, P., O'Sullivan, P., Mathewson, A.

“…In this study, voltage and current stress measurements in the Fowler-Nordheim regime, performed on gate oxides (9 nm-28 nm), indicated that a ramped pre-stress…”
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A new physics-based model for time-dependent-dielectric-breakdown by Schlund, B., Messick, C., Suehle, J.S., Chaparala, P.

“…A new, physics-based model for time dependent dielectric breakdown has been developed, and is presented along with test data obtained by NIST on oxides…”
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Investigation of charging damage induced V/sub t/ mismatch for submicron mixed-signal technology by Zhao, J., Chen, H.S., Teng, C.S.

“…In analog and mixed-signal circuit applications, control of transistor analog parameters such as threshold voltage (V/sub t/) mismatch of differential pairs…”
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Field enhanced oxide charge detrapping in n-MOSFET's by Tahui Wang, Tse-En Chang, Lu-Ping Chiang, Chimoon Huang

“…The field dependence of oxide charge detrapping time in a 0.6 /spl mu/m DDD n-MOSFET subject to hot carrier stress was characterized. A series of oxide trap…”
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Excess currents induced by hot-hole injection and F-N stress in thin SiO/sub 2/ films [flash memories] by Teramoto, A., Kobayashi, K., Matsui, Y., Hirayama, M., Yasuoka, A.

“…The behavior of excess currents induced by hot-hole injection and F-N stress is investigated in 60-/spl Aring/ oxides. The excess currents induced by the…”
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A new algorithm for NMOS AC hot-carrier lifetime prediction based on the dominant degradation asymptote by Kim, S.-W.A., Menberu, B., Chung, J.E.

“…This study presents a new algorithm for improved prediction of AC hot-carrier lifetime. It is based on identifying and projecting the dominant degradation…”
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A High-Sensitivity Photon Emission Microscope System with Continuous Wavelength Spectroscopic Capabi by Tao, J.M., Chim, W.K., Chan, D.S.H., Phang, J.C.H., Liu, Y.Y.

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High Temperature I/sub DDQ/ Testing for Detection of Sodium and Potassium by Sabin, E.

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The effect of the floating gate/tunnel SiO/sub 2/ interface on FLASH memory data retention reliability by Kubota, T., Ando, K., Muramatsu, S.

“…The influence of phosphorus at the floating gate (FG)/tunnel oxide interface on the FLASH memory data retention characteristics is investigated. By measuring…”
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A quantitative analysis of stress induced excess current (SIEC) in SiO/sub 2/ films by Sakakibara, K., Ajika, N., Hatanaka, M., Miyoshi, H.

“…The low-level stress induced excess current (SIEC) characteristics of 92 /spl Aring/ wet oxide are investigated in detail. As a result of the systematic…”
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