Search Results - "Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)"
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On the oxide thickness dependence of the time-dependent-dielectric-breakdown
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…In this work, we investigate the reliability of SiO/sub 2/ films ranging from 20 to 65 nm. Time-dependent dielectric breakdown (TDDB) tests are conducted under…”
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Thin-film NTC resistor based on SrNb/sub x/Ti/sub 1-x/O/sub 3
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…A novel strontium titanate-niobate (SrNb/sub x/Ti/sub 1-x/O/sub 3/) thin-film NTC (negative temperature coefficient) resistor is fabricated on a SiO/sub 2//Si…”
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Interface properties of N/sub 2/O-annealed NH/sub 3/-treated 6H-SiC MOS capacitor
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…Effects of pre-oxidation NH/sub 3/ treatment and post-oxidation N/sub 2/O annealing on n-SiC/SiO/sub 2/ interface properties were investigated as compared to…”
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Size effect in (Sr/sub x/Ba/sub 1-x/)Nb/sub 2/O/sub 6/ ultrafine powder
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…The sol-gel derived (Sr/sub x/Ba/sub 1-x/)Nb/sub 2/O/sub 6/ (SBN) ultrafine powder can be obtained at an annealing temperature as low as 700/spl deg/C, which…”
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TiNi shape memory alloy thin film rotating actuator
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…Nickel titanium (TiNi) shape memory alloy thin film is a promising candidate for microactuation because of its large deformation and recovery force, good…”
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Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al/sub 2/O/sub 3/ (0001)
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…Rutherford backscattering spectrometry (RBS) and channeling is used to determine the presence of wurtzite and zinc-blende phases of MOCVD grown Mg-doped…”
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900 MHz 7.4 W SiGe heterojunction bipolar transistor
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si…”
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InP/GaInAs/InP dual metal-semiconductor-metal photodetectors with a strained AlInP barrier enhancement layer for balanced heterodyne detection
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…A monolithic pair of InP/Ga/sub 0.47/In/sub 0.53/As/InP metal-semiconductor-metal photodetectors with a strained Al/sub 0.1/In/sub 0.9/P cap layer was…”
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Er/sup 3+//Yb/sup 3+/ co-doped BK-7 glass optical amplifier
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…Rare-earth doped Yb/Er BK-7 glass was fabricated and characterized. The photoluminescence (PL) intensity in these co-doped samples saturates at a Yb/Er ratio…”
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A physical analytical model for LT-GaAs and LT-Al/sub 0.3/Ga/sub 0.7/As MISFET devices
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…An accurate physical analytical model has been described for output current-voltage characteristics and for describing the behavior of electron in LT-GaAs and…”
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Electrical modeling of MEMS sensor for integrated accelerometer applications
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…A new electrical modeling method for mechanical capacitive sensor is proposed. The method is more direct and accurate in defining the mechanical sensor used…”
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Smart ferroelectric materials for sensors and mechatronic device applications
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…Ferroelectric single crystals, ceramics, polymers and composites can convert changes in mechanical and thermal energies into electrical signals as well as…”
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Base current instability of AlGaAs/GaAs HBTs operated at low voltages
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…This paper provides an analysis of the physical mechanisms underlying the long-term base current instability the AlGaAs/GaAs heterojunction bipolar transistor…”
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Study of 1/f noise in III-V nitride based MODFETs at low drain bias
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…Flicker noise in MBE grown III-V nitride MODFETs was characterized from room temperature to 130 K. The voltage noise power spectra, S/sub v/(f), were found to…”
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A testing instrument for dynamic contact resistance
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…A mathematical model of the contact resistance of electrical apparatus contacts and its dynamic changing law are discussed, and a new testing instrument for…”
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Charge transport and nature of traps in implanted silicon nitride
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…The authors study the charge transport in ion implanted Si/sub 3/N/sub 4/ and aim to understand the charge transport mechanism and the nature of defects…”
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A physical approach to enhance BSIM3 NQS model for fast transient simulation
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…An enhanced BSIM3 non-quasi-static (NQS) model for the large signal transient has been developed. The enhancement followed the same device topology adopted in…”
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Study of porous silicon gas sensor
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…Porous silicon (Si) and porous poly-Si organic and humidity vapor sensors have been studied. For aluminum (Al)/porous Si/p-Si/Al Schottky diode sensor, the…”
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High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting…”
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Photoconductive detection of millimetre waves using proton bombarded GaAs
Published in Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) (1999)“…We show that ion-damaged GaAs may be used to detect millimetre electromagnetic waves in photoconductive sampling gates. The semi-insulating GaAs material which…”
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