Search Results - "Priyadarshani, Kumari Nibha"

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  1. 1

    Analog/RF Performance Estimation of a Dopingless Symmetric Tunnel Field Effect Transistor by Priyadarshani, Kumari Nibha, Singh, Sangeeta, Singh, Kunal

    Published in Journal of electronic materials (01-08-2021)
    “…An innovative dopingless symmetric tunnel field effect transistor (DLSTFET) has been investigated for its analog/RF performance. It tackles the unidirectional…”
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    Journal Article
  2. 2

    RF and linearity distortion performance estimation of dopingless symmetric tunnel FET (DLSTFET) by Priyadarshani, Kumari Nibha, Singh, Sangeeta

    Published in International journal of electronics (04-03-2023)
    “…This work eradicates the issue of area penalty in logic designing due to unidirectional flow of current in conventional TFET. The dopingless symmetric tunnel…”
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    Journal Article
  3. 3

    Gate-all-around junctionless FET based label-free dielectric/charge modulation detection of SARS-CoV-2 virus by Priyadarshani, Kumari Nibha, Singh, Sangeeta, Mohammed, Mustafa K. A

    Published in RSC advances (21-03-2022)
    “…The recent corona outbreak has necessitated the development of a label-free, highly sensitive, fast, accurate, and cost-effective biosensor for the detection…”
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    Journal Article
  4. 4

    Contact engineered charge plasma junctionless transistor for suppressing tunneling leakage by Kumar, Harendra, Singh, Sangeeta, Priyadarshani, Kumari Nibha, Ghosh, Jayanta, Naugarhiya, Alok

    “…This work reports contact engineered charge plasma junctionless transistor (CE‐CP‐JLT) to suppress the tunneling leakage current by deploying calibrated…”
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    Journal Article
  5. 5

    Double Metal Double Gate Hetero-oxide Tunnel FET: An Analytical Model by Priyadarshani, Kumari Nibha, Singh, Sangeeta

    Published in SILICON (01-08-2022)
    “…A 2-D compact analytical model for the device potential of double metal double gate hetero-oxide Tunnel FET (DM DG Hetero-oxide TFET) has been developed in…”
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    Journal Article
  6. 6

    Dual Metal Double Gate Ge-Pocket TFET (DMG-DG-Ge-Pocket TFET) with Hetero Dielectric: DC & Analog Performance Projections by Priyadarshani, Kumari Nibha, Singh, Sangeeta, Naugarhiya, Alok

    Published in SILICON (01-02-2022)
    “…This work exclusively illustrates dual-metal double gate Ge pocket tunnel field effect transistor (DMG-DG-Ge pocket TFET) with hetero gate dielectric. This…”
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    Journal Article
  7. 7

    A Novel Self-Aligned Dopingless Symmetric Tunnel Field Effect Transistor (DL-STFET): A Process Variations Tolerant Design by Priyadarshani, Kumari Nibha, Singh, Sangeeta, Singh, Kunal

    Published in SILICON (01-01-2022)
    “…This work reports a novel device structure, dopingless heterojunction symmetric tunnel field effect transistor (DL-STFET), based on the work-function…”
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    Journal Article
  8. 8

    Ultra Steep Ge-Source Dopingless Tunnelling Field Effect Transistor with Enhanced Drive Current: DC to Linearity Characteristics Analysis by Priyadarshani, Kumari Nibha, Singh, Sangeeta, Singh, Kunal

    Published in SILICON (01-07-2022)
    “…Ge-source dopingless tunnelling field effect transistor (Ge-source DLTFET) with the optimization of dielectric oxide thickness under the source and the gate…”
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    Journal Article
  9. 9

    Dielectric/charge density modulated junctionless FET based label-free biosensor by Priyadarshani, Kumari Nibha, Singh, Sangeeta, Mohammed, Mustafa K.A.

    Published in Inorganic chemistry communications (01-02-2023)
    “…[Display omitted] •Charge plasma junctionless FET is used to be deployed as a biosensor.•The double cavity regions have been created for biomolecules…”
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    Journal Article
  10. 10

    Vertically Extended Drain Double Gate Si1−xGex Source Tunnel FET : Proposal & Investigation For Optimized Device Performance by Raj, Anand, Singh, Sangeeta, Priyadarshani, Kumari Nibha, Arya, Rajeev, Naugarhiya, Alok

    Published in SILICON (01-08-2021)
    “…This paper reports an unique approach to suppress ambipolarity and enhance drive current in tunnel field effect transistor (TFET) by incorporating vertically…”
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    Journal Article
  11. 11

    RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric by Priyadarshani, Kumari Nibha, Singh, Sangeeta, Naugarhiya, Alok

    Published in Microelectronics (01-02-2021)
    “…The incorporation of dual-metal, double-gate, germanium pocket and hetero gate dielectric tunnel field effect transistor (DMG-DG-Ge pocket TFET) allows the…”
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    Journal Article
  12. 12

    Impact of temperature and interface trapped charges variation on the Analog/RF and linearity of vertically extended drain double gate Si0.5Ge0.5 source tunnel FET by Kumari, Pallavi, Raj, Anand, Priyadarshani, Kumari Nibha, Singh, Sangeeta

    Published in Microelectronics (01-07-2021)
    “…This work analyses the reliability issues of vertically extended drain double gate Si1−xGex source tunnel FET on the basis of temperature effect and interface…”
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    Journal Article
  13. 13

    Ultra Sensitive Breast Cancer Cell Lines Detection Using Dual Nanocavities Engraved Junctionless FET by Priyadarshani, Kumari Nibha, Singh, Sangeeta

    Published in IEEE transactions on nanobioscience (01-10-2023)
    “…This article reports breast cancer cell lines (Hs578T, MDA-MB-231, MCF-7, and T47D) and healthy breast cells (MCF-10A) detection based on the modulation of its…”
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    Magazine Article
  14. 14

    Ultra Sensitive Label-Free Detection of Biomolecules Using Vertically Extended Drain Double Gate Si ₀.₅ Ge ₀.₅ Source Tunnel FET by Priyadarshani, Kumari Nibha, Singh, Sangeeta

    Published in IEEE transactions on nanobioscience (01-10-2021)
    “…This work reports a vertically extended drain double gate Si 0.5 Ge 0.5 source tunnel FET for the biomolecules detection using its electrical properties…”
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    Magazine Article
  15. 15

    Ultra Sensitive Label-Free Detection of Biomolecules Using Vertically Extended Drain Double Gate Si₀.₅Ge₀.₅ Source Tunnel FET by Priyadarshani, Kumari Nibha, Singh, Sangeeta

    Published in IEEE transactions on nanobioscience (01-10-2021)
    “…This work reports a vertically extended drain double gate Si 0.5 Ge 0.5 source tunnel FET for the biomolecules detection using its electrical properties…”
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    Magazine Article