Search Results - "Prinz, G. M."

Structural and spectroscopic properties of AlN layers grown by MOVPE by Thapa, S.B., Kirchner, C., Scholz, F., Prinz, G.M., Thonke, K., Sauer, R., Chuvilin, A., Biskupek, J., Kaiser, U., Hofstetter, D.

“…The effects on surface morphology, crystal quality, and growth rate of undoped AlN layers grown on c -plane sapphire substrates due to the changes in growth…”
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Concept for diamond 3-D integrated UV sensor by Kaiser, A., Kueck, D., Benkart, P., Munding, A., Prinz, G.M., Heittmann, A., Huebner, H., Sauer, R., Kohn, E.

“…In this investigation we present a novel technology for three-dimensional integration of diamond sensors and actuators. Based on a previously developed…”
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Donor phosphorus interactions observed by bound exciton luminescence in CVD diamond by Prinz, G.M., Thonke, K., Sauer, R., Koizumi, S.

“…Two phosphorus-doped CVD diamond layers with nominal concentrations of 3 × 10 18 cm − 3 and 1 × 10 19 cm − 3 were studied by low-temperature…”
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The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures by Thonke, K., Schirra, M., Schneider, R., Reiser, A., Prinz, G. M., Feneberg, M., Sauer, R., Biskupek, J., Kaiser, U.

“…Cathodoluminescence spectra recorded with high spatial and wavelength resolution on tilted ZnO epitaxial layers allow to identify a very prominent emission…”
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Growth and studies of Si-doped AlN layers by Thapa, S.B., Hertkorn, J., Scholz, F., Prinz, G.M., Leute, R.A.R., Feneberg, M., Thonke, K., Sauer, R., Klein, O., Biskupek, J., Kaiser, U.

“…Edge-type threading dislocations (TDs) can be reduced by increasing the epilayer thickness of undoped AlN grown on c -plane sapphire substrate by low pressure…”
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Beating of coupled ultraviolet light modes in zinc oxide nanoresonators by Schirra, M, Feneberg, M, Prinz, G M, Reiser, A, Röder, T, Thonke, K, Sauer, R

“…Periodic spatial intensity modulations of near-band-gap luminescence light at 3.36 eV photon energy are reported in nanometer-sized resonators of single zinc…”
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Stacking fault related 3.31 − eV luminescence at 130 − meV acceptors in zinc oxide by Schirra, M., Schneider, R., Reiser, A., Prinz, G. M., Feneberg, M., Biskupek, J., Kaiser, U., Krill, C. E., Thonke, K., Sauer, R.

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The influence of different pre-treatments of current collectors and variation of the binders on the performance of Li4Ti5O12 anodes for lithium ion batteries by Wennig, S., Langklotz, U., Prinz, G. M., Schmidt, A., Oberschachtsiek, B., Lorke, A., Heinzel, A.

“…In order to optimize the electron transfer between the Li 4 Ti 5 O 12 -based active mass and the current collector, the surface of aluminum foil was modified…”
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Conductivity of single ZnO nanorods after Ga implantation in a focused-ion-beam system by Weissenberger, D., Dürrschnabel, M., Gerthsen, D., Pérez-Willard, F., Reiser, A., Prinz, G. M., Feneberg, M., Thonke, K., Sauer, R.

“…ZnO nanorods were implanted with Ga+ ions in a combined scanning-electron-microscope/focused-ion-beam system with doses from 1011to1017cm−2. Electrical…”
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Photoluminescence, cathodoluminescence, and reflectance study of AlN layers and AlN single crystals by Prinz, G.M., Ladenburger, A., Feneberg, M., Schirra, M., Thapa, S.B., Bickermann, M., Epelbaum, B.M., Scholz, F., Thonke, K., Sauer, R.

“…Strained AlN layers grown by MOVPE on sapphire and nominally unstrained AlN single crystals were studied employing photoluminescence, cathodoluminescence, and…”
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Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods by Weissenberger, D., Gerthsen, D., Reiser, A., Prinz, G. M., Feneberg, M., Thonke, K., Zhou, H., Sartor, J., Fallert, J., Klingshirn, C., Kalt, H.

“…The electrical properties of field-effect transistors fabricated on the basis of single ZnO nanorods were analyzed under ambient conditions and in the chamber…”
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Acceptor-related luminescence at 3.314 eV in zinc oxide confined to crystallographic line defects by Schirra, M., Schneider, R., Reiser, A., Prinz, G.M., Feneberg, M., Biskupek, J., Kaiser, U., Krill, C.E., Sauer, R., Thonke, K.

“…The 3.314 eV emission band characteristically appearing in bulk, epitaxial, and nano-structured ZnO samples is studied by photoluminescence (PL) and spatially…”
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Incorporation of Ga in ZnO∕GaN epitaxial films by Schneider, R., Schirra, M., Reiser, A., Prinz, G. M., Limmer, W., Sauer, R., Thonke, K., Biskupek, J., Kaiser, U.

“…Growth of zinc oxide (ZnO) layers on gallium nitride (GaN) substrates benefits from the small lattice mismatch of these two materials. We report on spatially…”
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Incorporation of Ga in Zn O ∕ Ga N epitaxial films by Schneider, R., Schirra, M., Reiser, A., Prinz, G. M., Limmer, W., Sauer, R., Thonke, K., Biskupek, J., Kaiser, U.

“…Growth of zinc oxide (ZnO) layers on gallium nitride (GaN) substrates benefits from the small lattice mismatch of these two materials. We report on spatially…”
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Conductivity of single ZnO nanorods after Ga implantationin a focused-ion-beam system by Weissenberger, D., Dürrschnabel, M., Gerthsen, D., Pérez-Willard, F., Reiser, A., Prinz, G. M., Feneberg, M., Thonke, K., Sauer, R.

“…ZnO nanorods were implanted with Ga + ions in a combined scanning-electron-microscope/focused-ion-beam system with doses from 10 11 to 10 17 cm − 2 …”
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Acceptor-related luminescence at 3.314eV in zinc oxide confined to crystallographic line defects by Schirra, M., Schneider, R., Reiser, A., Prinz, G.M., Feneberg, M., Biskupek, J., Kaiser, U., Krill, C.E., Sauer, R., Thonke, K.

“…The 3.314eV emission band characteristically appearing in bulk, epitaxial, and nano-structured ZnO samples is studied by photoluminescence (PL) and spatially…”
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Growth and studies of Si-doped AIN layers by THAPA, S. B, HERTKORN, J, KAISER, U, SCHOLZ, F, PRINZ, G. M, LEUTE, R. A. R, FENEBERG, M, THONKE, K, SAUER, R, KLEIN, O, BISKUPEK, J

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The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures by Thonke, K., Schirra, M., Schneider, R., Reiser, A., Prinz, G.M., Feneberg, M., Biskupek, J., Kaiser, U., Sauer, R.

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Acceptor-related luminescence at 3.314eV in zinc oxide confined to crystallographic line defects by SCHIRRA, M, SCHNEIDER, R, REISER, A, PRINZ, G. M, FENEBERG, M, BISKUPEK, J, KAISER, U, KRILL, C. E, SAUER, R, THONKE, K

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Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates by Reiser, A., Raeesi, V., Prinz, G.M., Schirra, M., Feneberg, M., Röder, U., Sauer, R., Thonke, K.

“…High-quality, vertically aligned zinc oxide (ZnO) nano-wires were grown by the vapour-transport method on (112¯0) (a-plane) sapphire substrate covered by a…”
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