Search Results - "Prineas, John P"
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Contactless Optical Characterization of Carrier Dynamics in Free-Standing InAs-InAlAs Core–Shell Nanowires on Silicon
Published in Nano letters (13-02-2019)“…Contactless time-resolved optical pump–probe and external quantum efficiency measurements were performed in epitaxially grown free-standing wurtzite indium…”
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Analytical Evaluation of Mobile In Situ Soil Nitrate Infrared Sensor Designs for Precision Agriculture
Published in IEEE sensors journal (15-09-2021)“…One approach to improving nitrogen fertilizer use efficiency in crop production is to use infrared (IR) soil nitrate sensors to analyze soil nitrate and then…”
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Long interior carrier lifetime in selective-area InAs nanowires on silicon
Published in Optical materials express (01-10-2020)“…Catalyst-free, position-controlled indium arsenide (InAs) nanowires (NWs) of variable diameters were grown on Si (111) by selective-area epitaxy (SAE)…”
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Enhanced radiative and thermal properties from surface encapsulation of InAs nanowires
Published in Optical materials express (01-03-2021)“…In this work, photoluminescence (PL), quantum efficiency and carrier dynamics are investigated in indium arsenide (InAs) nanowires (NWs) with various surface…”
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Dual-Color InAs/GaSb Cascaded Superlattice Light-Emitting Diodes
Published in IEEE journal of quantum electronics (01-12-2015)“…Over the last decade, InAs/GaSb superlattice structures have become an increasingly important technology for infrared applications. By stacking two…”
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Over Three Hundred Percent Increased Light Extraction from Emitters at Mid-Infrared Wavelengths Using Metalenses
Published in ACS applied electronic materials (25-08-2020)“…Low extraction efficiencies continue to be a source of parasitic heating and decreased performance in infrared light-emitting diodes. Research into…”
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Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared
Published in IEEE journal of quantum electronics (01-01-2011)“…Superlattice InAs/GaSb light-emitting diodes with peak emission wavelength of 8.6 μm and output power approaching 190 μW at 77 K from a 120 × 120 μm 2 mesa are…”
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High-Power MWIR Cascaded InAs-GaSb Superlattice LEDs
Published in IEEE journal of quantum electronics (01-07-2009)“…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
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Enhanced MWIR Led Performance with a Plasmonic Grating
Published in 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) (01-08-2019)“…To improve the efficiency of GaSb-based mid-wave infrared LEDs, we investigated the enhanced spontaneous emission by a dipole in a thin slab numerically. A…”
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Conference Proceeding -
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Mid-Infrared Cascaded Superlattice LEDs Improved Order of Magnitude from New Four-Layer Superlattices and Textured Interfaces
Published in 2020 IEEE Research and Applications of Photonics in Defense Conference (RAPID) (01-08-2020)“…We incorporate new four-layer superlattices into cascaded mid-infrared superlattices for improved quantum efficiency, and thinning/roughening of the substrate…”
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Conference Proceeding -
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Designing and Characterizing Metalenses for the Increased Light Extraction of MWIR LEDs
Published in 2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) (01-08-2019)“…High radiance IRLEDs have been achieved, but much of the light created still remains in the device resulting in poor wall-plug efficiencies. Preliminary…”
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Conference Proceeding -
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512 \times 512, 100 Hz Mid-Wave Infrared LED Microdisplay System
Published in Journal of display technology (01-10-2016)“…The demand for high-speed and/or high-temperature infrared (IR) scene projectors has led to the development of systems based on IR light-emitting-diode (LED)…”
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512 \,\times\,512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices
Published in IEEE journal of quantum electronics (01-09-2013)“…Single element 33×33 μm 2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A…”
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Ultrafast ac Stark effect switching of the active photonic band gap from Bragg-periodic semiconductor quantum wells
Published in Applied physics letters (02-12-2002)“…The ultrafast suppression and recovery of an active photonic band-gap structure constructed from the periodic complex susceptibility of quantum well excitons…”
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Active Region Cascading for Improved Performance in InAs-GaSb Superlattice LEDs
Published in IEEE journal of quantum electronics (01-12-2008)“…Cascading of active regions in InAs-GaSb superlattice light-emitting diodes (LEDs) grown by molecular beam epitaxy is demonstrated as an effective means of…”
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Radiative and Nonradiative Recombination Coefficients of InAs/InAlAs Core-shell Nanowires
Published in 2018 Conference on Lasers and Electro-Optics (CLEO) (01-05-2018)“…Ultrafast and external quantum efficiency measurements were performed on InAs/InAlAs core-shell nanowires. Rates of different recombination mechanisms were…”
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Conference Proceeding -
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End to End Testing of IRLED Projectors
Published in 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID) (01-08-2018)“…In 2014, our team built the world's first infrared LED scene projector. This system is called the SLEDS projector and has been thoroughly tested and evaluated…”
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Conference Proceeding -
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Polarization- and spin-dependent ultrafast optical nonlinearities of Bragg-spaced quantum wells
Published in 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science (01-05-2008)“…Spin- and polarization-dependent ultrafast blue shifts, transient gain and self-wave-mixing are observed in Bragg-spaced InGaAs/GaAs quantum wells. The data…”
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Conference Proceeding -
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Ultrafast all-optical polarization spin switching in resonant photonic bandgap structures
Published in (CLEO). Conference on Lasers and Electro-Optics, 2005 (2005)Get full text
Conference Proceeding