Search Results - "Prineas, J.P"

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  1. 1

    Optimization of MBE-grown GaSb buffer layers and surface effects of antimony stabilization flux by Koerperick, E.J., Murray, L.M., Norton, D.T., Boggess, T.F., Prineas, J.P.

    Published in Journal of crystal growth (2010)
    “…Growth optimization of unintentionally doped GaSb buffer layers on (1 0 0) GaSb substrates by molecular beam epitaxy is reported. Several growth parameters…”
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    Journal Article
  2. 2

    High-Power MWIR Cascaded InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

    Published in IEEE journal of quantum electronics (01-07-2009)
    “…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
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    Journal Article
  3. 3

    Active Region Cascading for Improved Performance in InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

    Published in IEEE journal of quantum electronics (01-12-2008)
    “…Cascading of active regions in InAs-GaSb superlattice light-emitting diodes (LEDs) grown by molecular beam epitaxy is demonstrated as an effective means of…”
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    Journal Article
  4. 4

    Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon by Muhowski, A.J., Bogh, C.L., Heise, R.L., Boggess, T.F., Prineas, J.P.

    Published in Journal of crystal growth (01-02-2019)
    “…•Optical output of mid-infrared superlattice LEDs improved on silicon substrates.•Mid-IR SLEDs on Si perform better due to improved thermal management.•Mid-IR…”
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    Journal Article
  5. 5

    Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices by Murray, L.M., Lokovic, K.S., Olson, B.V., Yildirim, A., Boggess, T.F., Prineas, J.P.

    Published in Journal of crystal growth (15-01-2014)
    “…InAs/GaSb superlattice samples have been grown with variations in interface design and growth rates of InAs and GaSb. Time resolved photoluminescence…”
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    Journal Article
  6. 6

    Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by strong few-cycle terahertz pulses by Tomaino, J.L., Jameson, A.D., Lee, Yun-Shik, Prineas, J.P., Steiner, J.T., Kira, M., Koch, S.W.

    Published in Solid-state electronics (01-10-2010)
    “…Intraexciton transitions in semiconductor quantum wells are modulated by strong and tunable few-cycle terahertz pulses. Time-resolved terahertz-pump and…”
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    Journal Article
  7. 7

    Flip Chip Bonding of 68 [Formula Omitted] 68 MWIR LED Arrays by Das, N.C, Taysing-Lara, M, Olver, K.A, Kiamilev, F, Prineas, J.P, Olesberg, J.T, Koerperick, E.J, Murray, L.M, Boggess, T.F

    “…The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was…”
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    Journal Article
  8. 8

    Interaction of intense narrowband THz pulses with coherent excitons in semiconductor QWs by Yun-Shik Lee, Jameson, A.D., Tomaino, J.L., Steiner, J.T., Kira, M., Koch, S.W., Prineas, J.P.

    “…We investigate the coherent dynamics of excitonic wavepackets in semiconductors driven by intense narrowband THz pulses. Time-resolved THz-pump and…”
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    Conference Proceeding
  9. 9

    Flip Chip Bonding of 68 \times 68 MWIR LED Arrays by Das, N.C., Taysing-Lara, M., Olver, K.A., Kiamilev, F., Prineas, J.P., Olesberg, J.T., Koerperick, E.J., Murray, L.M., Boggess, T.F.

    “…The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was…”
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    Journal Article
  10. 10

    Nonlinear emission dynamics from semiconductor microcavities in the nonperturbative regime by Lyngnes, O., Berger, J.D., Prineas, J.P., Park, S., Khitrova, G., Gibbs, H.M., Jahnke, F., Kira, M., Koch, S.W.

    Published in Solid state communications (01-11-1997)
    “…Time-resolved normal-mode-coupling (NMC) oscillations in the nonlinear regime of a semiconductor microcavity with a large splitting to linewidth ratio are…”
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    Journal Article
  11. 11

    Photoluminescence and Pump-Probe Spectroscopy of Bragg and Off-Bragg Quantum Wells by Spiegelberg, Ch, Gibbs, H.M., Prineas, J.P., Ell, C., Brick, P., Lee, E.S., Khitrova, G., Zapasskii, V.S., Hübner, M., Koch, S.W.

    Published in physica status solidi (b) (01-09-2000)
    “…In this paper we report on the investigation of radiatively coupled quantum wells in periodic quantum well (PQW) structures. The experimentally determined mode…”
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    Journal Article
  12. 12

    Linear and nonlinear optical properties of Bragg and off-Bragg periodic quantum well structures by Ell, C., Prineas, J.P., Brick, P., Hubner, M., Gibbs, H.M., Khitrova, G., Koch, S.W.

    “…Summary form only given. When quantum wells are grown as periodic structures, the radiative properties of the composite system can be very different from those…”
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    Conference Proceeding
  13. 13

    Excitonic Effects, Luminescence, and Lasing in Semiconductor Microcavities by Khitrova, G., Wick, D. V., Berger, J. D., Ell, C., Prineas, J. P., Nelson Jr, T. R., Lyngnes, O., Gibbs, H. M., Kira, M., Jahnke, F., Koch, S. W., Rühle, W., Hallstein, S.

    Published in physica status solidi (b) (01-03-1998)
    “…Semiconductor microcavities containing one or more narrow‐linewidth quantum wells exhibit two transmission peaks when the exciton and cavity are in resonance…”
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    Journal Article
  14. 14

    Identification of Individual Normal Modes of Light-Coupled Periodic Semiconductor Quantum Wells in Linear Spectra by Prineas, J.P., Ell, C., Lee, E.S., Khitrova, G., Gibbs, H.M.

    Published in Physica status solidi. A, Applied research (01-03-2000)
    “…An analysis of normal modes observed in measurements of reflection, transmission, and true absorption is presented. It is found that individual modes can be…”
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    Journal Article
  15. 15

    Coulomb Memory Effects and Higher-Order Coulomb Correlations in the Excitonic Optical Stark Effect by Brick, P., Ell, C., Hübner, M., Prineas, J.P., Khitrova, G., Gibbs, H.M., Sieh, C., Meier, T., Jahnke, F., Knorr, A., Koch, S.W.

    Published in Physica status solidi. A, Applied research (01-03-2000)
    “…Differential absorption spectra of high quality InGaAs quantum wells were measured by means of pump–probe spectroscopy as a function of pump–probe delay, for…”
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    Journal Article
  16. 16

    Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by few-cycle Terahertz pulses by Yun-Shik Lee, Jameson, A.D., Tomaino, J.L., Prineas, J.P., Steiner, J.T., Kira, M., Koch, S.W.

    “…The exciton binding energy in GaAs-based quantum-well (QW) structures is in the range of ~10 meV, which falls in the terahertz (THz) regime. THz-induced…”
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    Conference Proceeding
  17. 17

    THz-induced nonlinear optical transients of coherent excitons in semiconductor QWs by Yun-Shik Lee, Jameson, A.D., Tomaino, J.L., Prineas, J.P., Steiner, J.T., Kira, M., Koch, S.W.

    “…We demonstrate the ultrafast coherent dynamics of exciton wavepackets in semiconductor QWs resonantly driven by strong narrowband THz pulses. Time-resolved…”
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    Conference Proceeding
  18. 18

    Coherent Nonlinear Optical Effects in Semiconductor QWs Induced by Intense Single-Cycle THz Pulses by Yun-Shik Lee, Danielson, J.R., Steiner, J., Kira, M., Koch, S.W., Prineas, J.P.

    “…We investigate coherent THz-induced dynamics for optical excitation in semiconductor quantum-wells via THz-pump and optical-probe experiments. Strong…”
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    Conference Proceeding
  19. 19

    Polarization- and spin-dependent ultrafast optical nonlinearities of Bragg-spaced quantum wells by Johnston, W.J., Prineas, J.P., Smirl, A.L., Nguyen, D.T., Kwong, N.H., Binder, R., Khitrova, G., Gibbs, H.M.

    “…Spin- and polarization-dependent ultrafast blue shifts, transient gain and self-wave-mixing are observed in Bragg-spaced InGaAs/GaAs quantum wells. The data…”
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    Conference Proceeding
  20. 20

    Exciton/plasma fraction from photoluminescence by Chatterjee, S., Prineas, J.P., Mosor, S., Ell, C., Khitrova, G., Gibbs, H.M., Hoyer, W., Kira, M., Koch, S.W., Stolz, H.

    “…Under some conditions photoluminescence at the exciton resonance is emitted predominantly by an electron-hole plasma, under other conditions by excitons with…”
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    Conference Proceeding