Charge transport and nature of traps in implanted silicon nitride

The authors study the charge transport in ion implanted Si/sub 3/N/sub 4/ and aim to understand the charge transport mechanism and the nature of defects responsible for the charge transport. They find that the charge transport is described by thermally assisted tunneling with trap energy in the rang...

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Bibliographic Details

Published in:	Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) pp. 62 - 65
Main Authors:	Gritsenko, V.A., Morokov, Yu.N., Xu, J.B., Pridachin, N.B., Kalinin, V.V., Ng, A.C., Lau, L.W.M., Kwok, R.W.M.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1999
Subjects:	Charge carrier processes Chemical technology Chemistry Dielectric devices Electron traps Physics Radiative recombination Silicon Spontaneous emission Tunneling
Online Access:	Get full text
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