Search Results - "Premkumar, Peter Antony"
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Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling
Published in IEEE transactions on electron devices (01-12-2020)“…Buried power rail (BPR) is a key scaling booster for CMOS extension beyond the 5-nm node. This work demonstrates, for the first time, the integration of…”
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Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition
Published in Thin solid films (01-01-2014)“…Crystalline vanadium dioxide (VO2) thin films were prepared by annealing amorphous VO2 films which were deposited by atomic layer deposition on a SiO2…”
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Effect of Solvent on the Growth of Co and Co2C Using Pulsed-Spray Evaporation Chemical Vapor Deposition
Published in Chemistry of materials (11-12-2007)“…Cobalt and cobalt carbide films were obtained using chemical vapor deposition (CVD) at low pressure in a hydrogen-free atmosphere at temperatures below 300 °C…”
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Nickel and Nickel-Based Nanoalloy Thin Films from Alcohol-Assisted Chemical Vapor Deposition
Published in Chemistry of materials (12-01-2010)“…The growth of nickel and nickel-based alloys was investigated using the pulsed-spray evaporation (PSE) CVD process in hydrogen-free atmosphere. This process…”
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Roughness evolution during the atomic layer deposition of metal oxides
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-2013)“…The evolution of the surface roughness during the atomic-layer deposition (ALD) of Al2O3, NiO, and HfO2 was studied by atomic-force microscopy and nonspecular…”
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Smooth and Self-Similar SiO2-like Films on Polymers Synthesized in Roll-to-Roll Atmospheric Pressure-PECVD for Gas Diffusion Barrier Applications
Published in Plasma processes and polymers (23-08-2010)“…SiO2‐like layers deposited by means of the developed atmospheric pressure glow‐like DBD assisted CVD technology exhibit remarkable film properties, reported…”
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High Quality SiO2-like Layers by Large Area Atmospheric Pressure Plasma Enhanced CVD: Deposition Process Studies by Surface Analysis
Published in Plasma processes and polymers (14-10-2009)“…This work reports on the main competing processes and their contribution to the properties of SiO2 layers on polymers in large area AP‐PE‐CVD from…”
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Surface Dynamics of SiO2-like Films on Polymers Grown by DBD Assisted CVD at Atmospheric Pressure
Published in Plasma processes and polymers (01-12-2012)“…The development of the morphology and surface roughness of amorphous SiO2‐like films, on various polymeric substrates was analyzed by atomic force microscopy…”
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Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2021)“…In this study, we explored the key properties and functionalities of plasma enhanced atomic layer deposition (PEALD) SiNx films, synthesized using different…”
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Phase Formation and Morphology of Nickel Silicide Thin Films Synthesized by Catalyzed Chemical Vapor Reaction of Nickel with Silane
Published in Chemistry of materials (13-01-2015)“…The synthesis of nickel silicide thin films via a vapor–solid reaction has been studied by exposing thin (10 nm) Ni films to silane (SiH4). The crystalline…”
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Phase analysis and thermal stability of thin films synthesized via solid state reaction of Ni with Si sub(1 - x)Ge sub(x) substrate
Published in Microelectronic engineering (01-01-2016)“…The products of the solid state reaction involving ultra-thin Ni film (6 nm) and Si sub(1 - x)Ge sub(x) layers (Ge 25 and 55 at.%), were analysed using sheet…”
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Phase analysis and thermal stability of thin films synthesized via solid state reaction of Ni with Si1−xGex substrate
Published in Microelectronic engineering (05-01-2016)“…The products of the solid state reaction involving ultra-thin Ni film (6nm) and Si1−xGex layers (Ge 25 and 55at.%), were analysed using sheet resistance (Rs),…”
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Characterization of ultra-thin nickel–silicide films synthesized using the solid state reaction of Ni with an underlying Si:P substrate (P: 0.7 to 4.0%)
Published in Microelectronic engineering (01-05-2016)“…The solid state reaction of an ultra-thin Ni film (6nm) with Si:P epi layers (P: 0.7 to 4.0%), grown on 300-mm Si wafers, is studied as a function of different…”
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Selective chemical vapor synthesis of Cu3Ge: Process optimization and film properties
Published in Intermetallics (01-03-2013)“…We report on the synthesis of Cu3Ge films by exposing Cu films to germane (GeH4). The process window was established by investigating the influence of the GeH4…”
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Effect of Solvent on the Growth of Co and Co 2 C Using Pulsed-Spray Evaporation Chemical Vapor Deposition
Published in Chemistry of materials (01-12-2007)Get full text
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Morphological Description of Ultra-Smooth Organo-Silicone Layers Synthesized Using Atmospheric Pressure Dielectric Barrier Discharge Assisted PECVD
Published in Plasma processes and polymers (01-04-2013)“…The SiOxCyHz layers synthesized by means of the atmospheric pressure glow‐like DBD assisted PECVD technology show remarkable planarizing film properties,…”
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Optical Characterization of Plasma-Deposited SiO2-Like Layers on Anisotropic Polymeric Substrates
Published in Plasma processes and polymers (14-10-2010)“…In this paper, the characterization of the optical anisotropy of poly(ethylene‐2,6‐naphthalate) (PEN) by means of Transmission Generalized Ellipsometry coupled…”
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Surface Dynamics of SiO 2 ‐like Films on Polymers Grown by DBD Assisted CVD at Atmospheric Pressure
Published in Plasma processes and polymers (01-12-2012)“…Abstract The development of the morphology and surface roughness of amorphous SiO 2 ‐like films, on various polymeric substrates was analyzed by atomic force…”
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Plasma Process. Polym. 9-10/2010
Published in Plasma processes and polymers (14-10-2010)Get full text
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