Search Results - "Prakash, A.P.G."

A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs by Sutton, A.K., Haugerud, B.M., Prakash, A.P.G., Bongim Jun, Cressler, J.D., Marshall, C.J., Marshall, P.W., Ladbury, R., Guarin, F., Joseph, A.J.

“…We present the results of gamma irradiation on third-generation, 200 GHz SiGe HBTs. Pre- and post-radiation dc figures-of-merit are used to quantify the…”
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An Exploration of Substrate Coupling at K-Band Between a SiGe HBT Power Amplifier and a SiGe HBT Voltage-Controlled-Oscillator by Comeau, J.P., Najafizadeh, L., Andrews, J.M., Prakash, A.P.G., Cressler, J.D.

“…This work presents a case study of circuit-to-circuit substrate coupling between a 24-GHz power amplifier (PA) and a 23-GHz voltage-controlled oscillator (VCO)…”
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An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs by Sutton, A.K., Prakash, A.P.G., Bongim Jun, Enhai Zhao, Bellini, M., Pellish, J., Diestelhorst, R.M., Carts, M.A., Phan, A., Ladbury, R., Cressler, J.D., Marshall, Paul.W., Marshall, C.J., Reed, R.A., Schrimpf, R.D., Fleetwood, D.M.

“…We present an investigation of the observed variations in the total dose tolerance of the emitter-base spacer and shallow trench isolation oxides in a…”
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The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs by Prakash, A.P.G., Sutton, A.K., Diestelhorst, R.M., Espinel, G., Andrews, J., Bongim Jun, Cressler, J.D., Marshall, P.W., Marshall, C.J.

“…We compare, for the first time, the effects of 63 MeV protons on 1st generation and 3rd generation SiGe HBTs irradiated at both liquid nitrogen temperature (77…”
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Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics by Najafizadeh, L., Bellini, M., Prakash, A.P.G., Espinel, G.A., Cressler, J.D., Marshall, P.W., Marshall, C.J.

“…A comprehensive investigation of the effects of proton irradiation on the performance of SiGe BiCMOS precision voltage references intended for extreme…”
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Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices by Bongim Jun, Diestelhorst, R.M., Bellini, M., Espinel, G., Appaswamy, A., Prakash, A.P.G., Cressler, J.D., Dakai Chen, Schrimpf, R.D., Fleetwood, D.M., Turowski, M., Raman, A.

“…The off-state drain current leakage characteristics of 130 nm CMOS technology are investigated using x-ray irradiation and operating temperature as variables…”
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The impact of substrate bias on proton damage in 130 nm CMOS technology by Haugerud, B.M., Venkataraman, S., Sutton, A.K., Prakash, A.P.G., Cressler, J.D., Niu, G., Marshall, P.W., Joseph, A.J.

“…The effects of proton irradiation on the dc and ac properties of 130 nm Si CMOS technology are investigated. The impact of substrate bias is reported for the…”
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