Search Results - "Prajoon, P."

A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance by Pravin, J. Charles, Nirmal, D., Prajoon, P., Menokey, M. Anuja

“…The 2-D analytical solution of electrostatic potential and enhanced drain current is modeled for a dual metal surround gate junctionless transistor (DMSGJLT)…”
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Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique by Sandeep, V., Pravin, J. Charles, Babu, A. Ramesh, Prajoon, P.

“…The dc characteristics of AlGaN/gallium nitride (GaN) metal-oxide-semiconductor-high electron mobility transistor (MOS-HEMT) with an AlInN back-barrier layer…”
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InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review by Ajayan, J., Nirmal, D., Ravichandran, T., Mohankumar, P., Prajoon, P., Arivazhagan, L., Sarkar, Chandan Kumar

“…This paper reviews the rapid advancements being made in the development of high electron mobility transistors (HEMTs) on InP substrates for future…”
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Revolutionizing Fe doped back barrier AlGaN/GaN HEMTs: Unveiling the remarkable 1700V breakdown voltage milestone by Jebalin, I.V.Binola K, Franklin, S. Angen, G, Gifta, P, Prajoon, Nirmal, D.

“…This research investigates the enhanced device breakdown capabilities of silicon-based AlGaN/GaN High Electron Mobility Transistors (HEMT). By incorporating…”
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Optical Grating Techniques for MEMS-Based Spectrometer-A Review by Ravindran, Ajith, Nirmal, D., Prajoon, P., Rani, D. Gracia Nirmala

“…This paper examined the innovations of the spectrometers for the measurement of consistency based parameters of the handheld Micro Electronic Mechanical System…”
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Physics based modeling of AlGaN/BGaN quantum well based ultra violet light emitting diodes by Manikandan, M., Nirmal, D., Ajayan, J., Arivazhagan, L., Prajoon, P., Dhivyasri, G., Jagadeeswari, M.

“…This work investigates the multiple quantum well ultraviolet light emitting diode (LED) with AlGaN/BGaN/AlGaN active stack layers. The thickness and the boron…”
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A Numerical Investigation of Heat Suppression in HEMT for Power Electronics Application by Arivazhagan, L., Nirmal, D., Reddy, P. Pavan Kumar, Ajayan, J., Godfrey, D., Prajoon, P., Ray, Ashok

“…In this paper, AlGaN/GaN High Electron Mobility Transistor (HEMT) with stacked passivation (Diamond/SiN) is proposed and investigated. The implementation of…”
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InGaAs based gratings for UV–VIS spectrometer in prospective mRNA vaccine research by Ravindran, Ajith, Nirmal, D., Jebalin. I. V, Binola K., Pinkymol, K. P., Prajoon, P., Ajayan, J.

“…During the outbreak of the COVID-19 illness, mRNA (messenger RNA) injections proved to be effective vaccination. Among the presently available analytical…”
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Investigation of breakdown performance in Lg= 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications by Ajayan, J., Ravichandran, T., Prajoon, P., Pravin, J. Charles, Nirmal, D.

“…In this paper, we investigated the breakdown performance of novel nanoscale asymmetric InP high-electron-mobility transistors (HEMTs). The novel asymmetric InP…”
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Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis by Pravin, J. Charles, Prajoon, P., Nesamania, Flavia Princess, Srikesh, G., Senthil Kumar, P., Nirmal, D.

“…Hafnium oxide (HfO 2 ) nanoparticles were prepared by a chemical precipitation method and its physical and electrical properties were investigated. HfO 2 thin…”
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Investigation of DC and RF Performance of Novel MOSHEMT on Silicon Substrate for Future Submillimetre Wave Applications by Ajayan, J., Ravichandran, T., Mohankumar, P., Prajoon, P., Pravin, J. Charles, Nirmal, D.

“…In this work, the DC and RF performance of a 20 nm gate length novel metal oxide semiconductor high electron mobility transistor (MOSHEMT) on Silicon substrate…”
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Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model by Prajoon, P., Nirmal, D., Menokey, M. Anuja, Pravin, J. Charles

“…In this work, the origin of the efficiency droop at high injection current in an InGaN multiple-quantum-well light-emitting diode is suggested to be saturation…”
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Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application by Nirmal, D., Arivazhagan, L., Fletcher, A.S.Augustine, Ajayan, J., Prajoon, P.

“…In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated. A small signal…”
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Object Detection and Counting Using Unsupervised Method by Johnson, Jackson, Prajoon, P.

“…Differentiating and finding similar patterns of images from a video frame source emerges as the basic elemental task in image processing. In this paper,…”
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Novel PAPR Reduction in UFMC system for 5G Wireless Networks Using Precoding Algorithm by Raja, M. Ponmani, Sujatha, S., Prajoon, P.

“…The Universal Filtered Multi-carrier (UFMC) system is promising alternative multicarrier modulation scheme for fifth generation (5G) cellular networks. UFMC…”
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Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications by Mohan, B, Charles Pravin, J, Keerthi, M, Prajoon, P

“…The performance of Ga-Polar and N-Polar Gallium Nitride High-Electron-Mobility Transistors (HEMTs) in high-power direct current (DC) applications in the…”
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Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications by Jebalin, Binola K., Shobha Rekh, A., Prajoon, P., Godwinraj, D., Mohan Kumar, N., Nirmal, D.

“…•A polarization based unique S/D Schottky contact HEMT model is designed and the results are calibrated with experimental data.•The effect of mole fraction in…”
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CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics by Sandeep, V., Pravin, J. Charles, Babu, A. Ramesh, Prajoon, P.

“…An analytical model is used for evaluating the DC characteristics of AlGaN/GaN Metal Oxide Semiconductor-High Electron Mobility Transistor (MOS-HEMT) having an…”
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A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement by Prajoon, P., Nirmal, D., Anuja Menokey, M., Charles Pravin, J.

“…In this paper, Multiple Quantum Well (MQW) Light-Emitting Diodes (LEDs) with compositionally step graded (CSG) Alternating Barriers (AB) of InGaN-AlGaN with…”
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Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications by Charles Pravin, J., Nirmal, D., Prajoon, P., Ajayan, J.

“…This work covers the impact of dual metal gate engineered Junctionless MOSFET with various high-k dielectric in Nanoscale circuits for low power applications…”
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