Search Results - "Pozina, G"

Emission properties of Ga2O3 nano-flakes: effect of excitation density by Pozina, G., Forsberg, M., Kaliteevski, M. A., Hemmingsson, C.

“…In the quest of developing high performance electronic and optical devices and more cost effective fabrication processes of monoclinic β-Ga 2 O 3 , new growth…”
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Enhancement of spontaneous emission in Tamm plasmon structures by Gubaydullin, A. R., Symonds, C., Bellessa, J., Ivanov, K. A., Kolykhalova, E. D., Sasin, M. E., Lemaitre, A., Senellart, P., Pozina, G., Kaliteevski, M. A.

“…It was theoretically and experimentally demonstrated that in metal/semiconductor Tamm plasmon structures the probability of spontaneous emission can be…”
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Evidence for two Mg related acceptors in GaN by Monemar, B, Paskov, P P, Pozina, G, Hemmingsson, C, Bergman, J P, Kawashima, T, Amano, H, Akasaki, I, Paskova, T, Figge, S, Hommel, D, Usui, A

“…The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically grown on bulk GaN templates, to avoid strain broadening of…”
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Recombination dynamics in arrays of II–VI epitaxial quantum dots with Förster resonance energy transfer by Shubina, T. V., Pozina, G., Toropov, A. A.

“…We report on time‐resolved photoluminescence (TR PL) studies of Förster resonance energy transfer (FRET) between epitaxial CdSe/ZnSe quantum dots (QDs). To…”
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Single and double bosonic stimulation of THz emission in polaritonic systems by Kaliteevski, M. A., Ivanov, K. A., Pozina, G., Gallant, A. J.

“…The influence of the surrounding cavity on the efficiency of different types of polaritonic emitters of THz radiation has been analysed. It is demonstrated…”
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Enhancement of the Basal-Plane Stacking Fault Emission in a GaN Planar Nanowire Microcavity by Girshova, E. I., Pozina, G., Belonovskii, A. V., Mitrofanov, M. I., Levitskii, I. V., Voznyuk, G. V., Evtikhiev, V. P., Rodin, S. N., Kaliteevski, M. A.

“…We study and compare optical microcavities formed by GaN planar nanowires. Nanostructures with structural defects such as stacking faults and without defects…”
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Effect of silicon and oxygen doping on donor bound excitons in bulk GaN by Pozina, G., Khromov, S., Hemmingsson, C., Hultman, L., Monemar, B.

“…Freestanding n-type intentionally doped GaN layers grown by halide vapor phase epitaxy (HVPE) were studied by transient photoluminescence (PL). Concentrations…”
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Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN by Khromov, S., Monemar, B., Avrutin, V., Morkoç, H., Hultman, L., Pozina, G.

“…Si-doped GaN layers grown by metal organic vapor phase epitaxy on m-plane GaN substrates were investigated by low-temperature cathodoluminescence (CL). We have…”
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III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared by Shubina, T. V., Pozina, G., Jmerik, V. N., Davydov, V. Yu, Hemmingsson, C., Andrianov, A. V., Kazanov, D. R., Ivanov, S. V.

“…Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are…”
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Super-radiant mode in InAs—monolayer–based Bragg structures by Pozina, G., Kaliteevski, M. A., Nikitina, E. V., Denisov, D. V., Polyakov, N. K., Pirogov, E. V., Goray, L. I., Gubaydullin, A. R., Ivanov, K. A., Kaliteevskaya, N. A., Egorov, A. Yu, Clark, S. J.

“…We report direct experimental evidence of the collective super-radiant mode in Bragg structure containing 60 InAs monolayer-based quantum wells (QWs)…”
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Surface potential effect on excitons in AlGaN/GaN quantum well structures by Pozina, G., Hemmingsson, C., Amano, H., Monemar, B.

“…AlGaN/GaN quantum well (QW) heterostructures grown by metalorganic chemical vapor deposition on sapphire and on free-standing GaN substrates have been studied…”
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Polarization of stacking fault related luminescence in GaN nanorods by Pozina, G., Forsberg, M., Serban, E. A., Hsiao, C.-L., Junaid, M., Birch, J., Kaliteevski, M. A.

“…Linear polarization properties of light emission are presented for GaN nanorods (NRs) grown along [0001] direction on Si(111) substrates by direct-current…”
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Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers by Riedel, G.J., Pomeroy, J.W., Hilton, K.P., Maclean, J.O., Wallis, D.J., Uren, M.J., Martin, T., Forsberg, U., Lundskog, A., Kakanakova-Georgieva, A., Pozina, G., Janzen, E., Lossy, R., Pazirandeh, R., Brunner, F., Wurfl, J., Kuball, M.

“…Currently, up to 50% of the channel temperature in AlGaN/GaN electronic devices is due to the thermal-boundary resistance (TBR) associated with the nucleation…”
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Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy by Buyanova, I. A., Chen, W. M., Pozina, G., Bergman, J. P., Monemar, B., Xin, H. P., Tu, C. W.

“…The mechanism for low-temperature photoluminescence (PL) emissions in GaNAs epilayers and GaAs/GaNxAs1−x quantum well (QW) structures grown by molecular-beam…”
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AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm by Toropov, A. A., Shevchenko, E. A., Shubina, T. V., Jmerik, V. N., Nechaev, D. V., Evropeytsev, E. A., Kaibyshev, V. Kh, Pozina, G., Rouvimov, S., Ivanov, S. V.

“…We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible…”
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Strong Coupling of Excitons in Hexagonal GaN Microcavities by Belonovskii, A. V., Pozina, G., Levitskii, I. V., Morozov, K. M., Mitrofanov, M. I., Girshova, E. I., Ivanov, K. A., Rodin, S. N., Evtikhiev, V. P., Kaliteevski, M. A.

“…The GaN planar hexagonal microcavities are grown by the selective vapor-phase epitaxy technique. The spectra are measured by the low-temperature…”
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Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells by Pozina, G., Kaliteevski, M. A., Nikitina, E. V., Gubaidullin, A. R., Ivanov, K. A., Egorov, A. Yu

“…The time-resolved photoluminescence of a Bragg structure formed by InAs single-layer quantum wells in a GaAs matrix is investigated experimentally. The…”
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Optical and structural studies of homoepitaxially grown m -plane GaN by Khromov, S., Monemar, B., Avrutin, V., Li, Xing, Morkoç, H., Hultman, L., Pozina, G.

“…Cathodoluminescence (CL) and transmission electron microscopy studies of homoepitaxially grown m -plane Mg-doped GaN layers are reported. Layers contain basal…”
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III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy by Shubina, T. V., Jmerik, V. N., Davydov, V. Yu, Kazanov, D. R., Smirnov, A. N., Nechaev, D. V., Kuznetsova, N., Pozina, G., Hemmingsson, C., Ivanov, S. V.

“…This paper analyzes current trends in fabrication of III‐nitride microresonators exploiting whispering gallery modes. Novel cup‐cavities are proposed and their…”
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Role of the host polymer matrix in light emission processes in nano-CdS/poly vinyl alcohol composite by Rudko, G.Yu, Kovalchuk, A.O., Fediv, V.I., Ren, Q., Chen, W.M., Buyanova, I.A., Pozina, G.

“…Participation of a polymeric media in light-emitting processes of composite nano-CdS/polyvinyl alcohol is studied by probing different absorption-emission…”
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