Search Results - "Poyai, A."

Durable nitrate sensor by surface modification by Chaisriratanakul, W., Bunjongpru, W., Jeamsaksiri, W., Srisuwan, A., Porntheeraphat, S., Chaowicharat, E., Hruanun, C., Poyai, A., Promyothin, D., Nukeaw, J.

“…This work presents the development of nitrate sensor based on Ion Sensitive Field Effect Transistor (ISFET) technology to achieve longer device's lifetime…”
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An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magnetron sputtering by Sungthong, A., Porntheeraphat, S., Poyai, A., Nukeaw, J.

“…The indium oxynitride (InON) films were achieved by reactive RF magnetron sputtering indium target which has the purity of 99.999% with a novel reactive…”
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Very low drift and high sensitivity of nanocrystal-TiO2 sensing membrane on pH-ISFET fabricated by CMOS compatible process by Bunjongpru, W., Sungthong, A., Porntheeraphat, S., Rayanasukha, Y., Pankiew, A., Jeamsaksiri, W., Srisuwan, A., Chaisriratanakul, W., Chaowicharat, E., Klunngien, N., Hruanun, C., Poyai, A., Nukeaw, J.

“…► We can fabricate sensing membrane layer from TiN with low drift rate. ► The EIS device incorporating TiN film annealed at 850°C exhibited a highest…”
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Design, fabrication and analysis of silicon hollow microneedles for transdermal drug delivery system for treatment of hemodynamic dysfunctions by Ashraf, M W, Tayyaba, S, Nisar, A, Afzulpurkar, N, Bodhale, D W, Lomas, T, Poyai, A, Tuantranont, A

“…In this paper, we present design, fabrication and coupled multifield analysis of hollow out-of-plane silicon microneedles with piezoelectrically actuated…”
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Magnetotransistor Based on the Carrier Recombination-Deflection Effect by Leepattarapongpan, C., Phetchakul, T., Penpondee, N., Pengpad, P., Chaowicharat, E., Hruanun, C., Poyai, A.

“…This paper presents the three-terminal magnetotransistor based on the carrier recombination-deflection effect. Three-terminal magnetotransistor can detect…”
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Improved extraction of carrier concentration and depletion width from capacitance–voltage characteristics of silicon n+–p-well junction diodes by Poyai, A., Claeys, C., Simôen, E.

“…An accurate method is proposed for the extraction of the carrier concentration profile (pp well) and the depletion width (Wp well) in a p-well region from…”
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High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density by Poyai, A., Bunjongpru, W., Klunngien, N., Porntheerapat, S., Hruanan, C., Sopitpan, S., Nukeaw, J.

“…This paper presents the method to prepare and characterize high-dielectric constant aluminum oxynitride (AlON) formed by RF gas-timing sputtering. AlON layers…”
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Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n+-p-well diodes by Poyai, A, Simoen, E, Claeys, C

“…A procedure is proposed to extract the thermal generation lifetime (tau)g)) profile in the depletion region of shallow n( )-p-well junctions surrounded by…”
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Improved extraction of the activation energy of the leakage current in silicon p–n junction diodes by Poyai, A., Simoen, E., Claeys, C., Czerwinski, A., Gaubas, E.

“…An accurate method is proposed for the extraction of the activation energy ET from the volume generation current density JgA in silicon p–n junctions. It…”
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Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well by Poyai, A., Simoen, E., Claeys, C.

“…This letter describes a transient phenomenon in the reverse hole current of large-area shallow n+–p-well junctions, giving rise to a hump at a specific reverse…”
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Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes by Poyai, A., Simoen, E., Claeys, C., Gaubas, E., Huber, A., Gräf, D.

“…This paper proposes to extract the generation and recombination lifetime simultaneously from the recombination current in forward operation. The method is…”
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Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions by Czerwinski, A., Simoen, E., Poyai, A., Claeys, C., Ohyama, H.

“…It will be shown that an analysis of gated-diode (GD) structures enables to investigate the radiation damage in different parts of p-n junctions in a CMOS…”
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Shallow trench isolation dimensions effects on leakage current and doping concentration of advanced p–n junction diodes by Poyai, A., Rittaporn, I., Simoen, E., Claeys, C., Rooyackers, R.

“…This paper describes the impact of active area and shallow trench isolation (STI) width on the junction leakage current and doping concentration. A higher…”
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Silicon substrate effects on the current–voltage characteristics of advanced p–n junction diodes by Poyai, A, Simoen, E, Claeys, C, Czerwinski, A

“…An in-depth analysis of the forward and reverse current–voltage characteristics allows determination of the different geometrical (area, perimeter and corner)…”
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Current transients in almost-ideal Czochralski silicon p–n junction diodes by Poyai, A., Simoen, E., Claeys, C.

“…The nature of the reverse current transients in large-area nearly ideal p–n junction diodes fabricated on Czochralski silicon substrates is investigated. It is…”
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Radiation effects on the current–voltage and capacitance–voltage characteristics of advanced p–n junction diodes surrounded by shallow trench isolation by Poyai, A., Simoen, E., Claeys, C., Hayama, K., Kobayashi, K., Ohyama, H.

“…This paper investigates the impact of 20 MeV proton irradiation on the current–voltage ( I– V) and capacitance-voltage ( C– V) characteristics of different…”
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Radiation defects in STI silicon diodes and their effects on device performance by Hayama, K, Ohyama, H, Simoen, E, Claeys, C, Poyai, A, Miura, T, Kobayashi, K

“…Results are presented of a deep level transient spectroscopy (DLTS) investigation of the radiation induced lattice defects in shallow trench isolation (STI)…”
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Irradiation temperature dependence of radiation damage in STI Si diodes by Ohyama, H., Hayama, K., Takakura, K., Miura, T., Shigaki, K., Jono, T., Simoen, E., Poyai, A., Claeys, C.

“…Results are presented of a detailed study of the effects of a high-temperature 2-MeV electron irradiation on the performance degradation of STI (shallow trench…”
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Defect assessment of irradiated STI diodes by Ohyama, H., Hayama, K., Miura, T., Simoen, E., Claeys, C., Poyai, A., Nakabayashi, M., Kobayashi, K.

“…The device performance degradation and the induced lattice defects of shallow trench isolation (STI) n +p diodes, subjected to different high energy particle…”
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Impact of fast-neutron irradiation on the silicon p–n junction leakage and role of the diffusion reverse current by Czerwinski, A., Ka̧tcki, J., Ratajczak, J., Simoen, E., Poyai, A., Claeys, C., Ohyama, H.

“…The p–n junction leakage ( I R) at reverse voltage, which sets the leakage and power consumption of state of the art integrated circuits (ICs) and the DRAM…”
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