Search Results - "Pourrouquet, P."

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  1. 1
    Experimental Characterization and Simulation of Electron-Induced SEU in 45-nm CMOS Technology

    Experimental Characterization and Simulation of Electron-Induced SEU in 45-nm CMOS Technology by Samaras, A., Pourrouquet, P., Sukhaseum, N., Gouyet, L., Vandevelde, B., Chatry, N., Ecoffet, R., Bezerra, F., Lorfevre, E.

    Published in IEEE transactions on nuclear science (01-12-2014)
    “…This paper presents the single-event upset characterization of a commercial field programmable gate array (FPGA) using electron radiation. FPGA radiation test…”
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  2. 2
    FASTRAD 3.2: Radiation Shielding Tool with a New Monte Carlo Module

    FASTRAD 3.2: Radiation Shielding Tool with a New Monte Carlo Module by Pourrouquet, P., Thomas, J., Peyrard, P., Ecoffet, R., Rolland, G.

    Published in 2011 IEEE Radiation Effects Data Workshop (01-07-2011)
    “…FASTRAD ® is a complete engineering software developed for 3D radiation shielding analyses. A new Monte Carlo module, including forward and reverse methods,…”
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    Conference Proceeding
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  3. 3
    Worst-Case Proton Contribution to the Direct Ionization SEU Rate

    Worst-Case Proton Contribution to the Direct Ionization SEU Rate by Guillermin, J., Sukhaseum, N., Pourrouquet, P., Chatry, N., Bezerra, F., Ecoffet, R.

    “…Low energy protons can induce Single Event Upsets in highly integrated memories. The direct ionization phenomenon has been observed for technology nodes lower…”
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  4. 4
    Assessment of a Setup for the Characterization of Electronic Devices under Protons at Cryogenic Temperature

    Assessment of a Setup for the Characterization of Electronic Devices under Protons at Cryogenic Temperature by Bezerra, F., Boutillier, M., Baradat, B., Chatry, N., Dossat, C., Garcia, P., Pourrouquet, P.

    “…In space applications, components may be used at very low temperature. We have studied the ability of a custom designed cryostat developed by CNES to be used…”
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  5. 5
    Prediction methodology of single event effect sensitivity and application on SRAM device

    Prediction methodology of single event effect sensitivity and application on SRAM device by Andrianjohany, N., Pourrouquet, P., Coulie, K., Chatry, N., Rahajandraibe, W., Standarovski, D., Rolland, G., Ecoffet, R.

    “…This work reports a contribution to the evaluation of Single Event Effect (SEE) sensitivity. This prediction should allow designers to assess radiation…”
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  6. 6
    Comparative study between Monte-Carlo tools for space applications

    Comparative study between Monte-Carlo tools for space applications by Pourrouquet, P., Varotsou, A., Sarie, L., Thomas, J.-C, Chatry, N., Standarovski, D., Rolland, G., Barillot, C.

    “…Radiation analyses in the space industry rely more and more on Reverse Monte Carlo radiation transport calculation tools. These tools allow engineers to…”
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