Search Results - "Potié, A."

Tracheal intubation using intubating laryngeal tube iLTS-D™ and LMA Fastrach™ in 99 adult patients: A prospective multicentric randomised non-inferiority study by Zuercher, M., Casso, G., Krugel, V., Potié, A., Barry, M.P., Schoettker, P.

“…This study aimed to investigate the overall success of tracheal intubation using the intubating Laryngeal Tube Suction-Disposable (iLTS-D™, VBM, Sulz a. N.,…”
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Vertically integrated silicon-germanium nanowire field-effect transistor by Rosaz, G., Salem, B., Pauc, N., Potié, A., Gentile, P., Baron, T.

“…We demonstrate in this paper the possibility to vertically integrate SiGe nanowires in order to use them as vertical channel for field-effect transistors…”
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The fresh gas flow decoupling valve and the potential for leaks in the anaesthetic circle breathing system by Rey, A., Malézieux, O., Potié, A.

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Hypnosis and superficial cervical anesthesia for total thyroidectomy in a high-risk patient – A case report by Makovac, P., Potié, A., Roukain, A., Pucci, L., Rutz, T., Kopp, P.A., Matter, M.

“…•Total thyroidectomy can be challenging in high-risk patients.•Local superficial anesthesia combined with a hypnosis-analgesia technique instead of intravenous…”
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Electrical characteristics of a vertically integrated field-effect transistor using non-intentionally doped Si nanowires by Rosaz, G., Salem, B., Pauc, N., Gentile, P., Potié, A., Baron, T.

“…In this paper, we report the fabrication and the electrical characterization of Vertical Gate All Around Field-Effect Transistors (GAA-FET) using…”
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Evaluation of prophylactic transtracheal Ravussin© catheter for airway management in anticipated difficult airway patients: A retrospective study of 31 cases by Dewulf, A., Potié, A., Lupu, L., Van Boven, M.

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Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires by Potié, Alexis, Baron, Thierry, Dhalluin, Florian, Rosaz, Guillaume, Salem, Bassem, Latu-Romain, Laurence, Kogelschatz, Martin, Gentile, Pascal, Oehler, Fabrice, Montès, Laurent, Kreisel, Jens, Roussel, Hervé

“…The growth of semiconductor (SC) nanowires (NW) by CVD using Au-catalyzed VLS process has been widely studied over the past few years. Among others SC, it is…”
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Electrical characterisation of horizontal and vertical gate-all-around Si/SiGe nanowires field effect transistors by Salem, B., Rosaz, G., Pauc, N., Gentile, P., Periwal, P., Potie, A., Bassani, F., David, S., Baron, T.

“…This paper report the technological routes used to build horizontal and vertical gate all-around (GAA) Field-Effect Transistors (FETs) using both Si and SiGe…”
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NEMS nanostructures with enhanced piezoresistive and piezoelectric properties. Application to sensor devices and energy harvesting by Montes, L., Hinchet, R., Xu, X., Potie, A., Lee, J. W., Ardila, G., Baron, T., Mouis, M., Songmuang, R.

“…In this paper we present how piezoresitive and piezoelectric effects could be significantly enhanced in semiconductor nanostructures, and more specifically in…”
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Hypnosis and superficial cervical anesthesia for total thyroidectomy in a high-risk patient - A case report by Makovac, P, Potié, A, Roukain, A, Pucci, L, Rutz, T, Kopp, P A, Matter, M

“…INTRODUCTIONTotal thyroidectomy can be challenging in high-risk patients. Local cervical anesthesia with sedation is an alternative to general anesthesia. CASE…”
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PiezoNEMS: Semiconductor nanowires and heterostructures for sensing and energy harvesting by Montes, L., Xu, X., Potie, A., Bercu, B., Hinchet, R., Rochette, F., Ardila, G., Morfouli, P., Mouis, M., Songmuang, R., Salem, B., Baron, T.

“…In this paper we present new concepts of piezoresistive and piezoelectric devices based on nanowires and heterostructured nanowires, that could be integrated…”
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