High-Power Photodiodes With 65 GHz Bandwidth Heterogeneously Integrated Onto Silicon-on-Insulator Nano-Waveguides

High-speed InP-based modified uni-traveling carrier photodiodes with top p-contact on silicon-on-insulator nanowaveguides are reported. The photodiodes have low dark current (1 nA), high bandwidth (65 GHz), and deliver record-high RF output power at 70 GHz (-2 dBm at 20 mA). Balanced and traveling-w...

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Bibliographic Details
Published in:	IEEE journal of selected topics in quantum electronics Vol. 24; no. 2; pp. 1 - 6
Main Authors:	Ye Wang, Ze Wang, Qianhuan Yu, Xiaojun Xie, Posavitz, Taylor, Jacob-Mitos, Matt, Ramaswamy, Anand, Norberg, Erik J., Fish, Gregory A., Beling, Andreas
Format:	Journal Article
Language:	English
Published:	IEEE 01-03-2018
Subjects:	Bandwidth Frequency measurement III-V semiconductor materials Optical waveguides optoelectronic devices Photodetectors Photodiodes photonic integrated circuits Power generation Radio frequency
Online Access:	Get full text
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Summary:	High-speed InP-based modified uni-traveling carrier photodiodes with top p-contact on silicon-on-insulator nanowaveguides are reported. The photodiodes have low dark current (1 nA), high bandwidth (65 GHz), and deliver record-high RF output power at 70 GHz (-2 dBm at 20 mA). Balanced and traveling-wave photodiodes of this type have bandwidths of 20 and 35 GHz, respectively.
ISSN:	1077-260X 1558-4542
DOI:	10.1109/JSTQE.2017.2712625