Fully inkjet printed flexible resistive memory

Resistively switching memory cells (ReRAM) are strong contenders for next-generation non-volatile random access memories. In this paper, we present ReRAM cells on flexible substrates consisting of Ag/spin-on-glass/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate). The complete cell...

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Bibliographic Details
Published in:	Applied physics letters Vol. 110; no. 14
Main Authors:	Huber, B., Popp, P. B., Kaiser, M., Ruediger, A., Schindler, C.
Format:	Journal Article
Language:	English
Published:	Melville American Institute of Physics 03-04-2017
Subjects:	Applied physics Computer memory Flexible components Foils Glass Inkjet printing Low resistance Memory devices Polystyrene resins Random access Substrates Switching
Online Access:	Get full text
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Summary:	Resistively switching memory cells (ReRAM) are strong contenders for next-generation non-volatile random access memories. In this paper, we present ReRAM cells on flexible substrates consisting of Ag/spin-on-glass/PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate). The complete cell is fabricated using a standard inkjet printer without additional process steps. Investigations on the spin-on-glass insulating layer showed that low sintering temperatures are sufficient for good switching behavior, providing compatibility with various foils. The cells feature low switching voltages, low write currents, and a high ratio between high and low resistance state of 104. Combined with excellent switching characteristics under bending conditions, these results pave the way for low-power and low-cost memory devices for future applications in flexible electronics.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.4978664