Search Results - "Pophristic, M."

Single-crystal aluminum nitride nanomechanical resonators by Cleland, A. N., Pophristic, M., Ferguson, I.

“…Aluminum nitride is a light, stiff, piezoelectrically active material that can be epitaxially grown on single-crystal Si. AlN is beginning to play a role in…”
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Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT by Xiaobin Xin, Junxia Shi, Linlin Liu, Edwards, J., Swaminathan, K., Pabisz, M., Murphy, M., Eastman, L.F., Pophristic, M.

“…This letter demonstrates a high-voltage, high-current, and low-leakage-current GaN/AlGaN power HEMT with HfO 2 as the gate dielectric and passivation layer…”
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Time-resolved photoluminescence measurements of InGaN light-emitting diodes by Pophristic, M., Long, F. H., Tran, C., Ferguson, I. T., Karlicek, R. F.

“…We have used time-resolved photoluminescence (PL) to examine light-emitting diodes made of InGaN/GaN multiple quantum wells (MQWs) before the final stages of…”
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High-conductivity n -AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition by Pophristic, M., Guo, S. P., Peres, B.

“…Highly-conductive and crack-free n-Al0.6Ga0.4N films with thickness up to 1 μm were achieved by using high-temperature AlN or AlGaN/AlN superlattice (SL)…”
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Structural disorder in ion-implanted AlxGa1−xN by Kucheyev, S. O., Williams, J. S., Zou, J., Li, G., Jagadish, C., Manasreh, M. O., Pophristic, M., Guo, S., Ferguson, I. T.

“…The accumulation of structural damage in AlxGa1−xN films (with x=0.05–0.60) under heavy-ion bombardment at room temperature is studied by a combination of…”
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Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire by Pophristic, M., Long, F. H., Schurman, M., Ramer, J., Ferguson, I. T.

“…We have used confocal Raman microscopy to investigate lateral epitaxially overgrown (LEO) GaN on sapphire substrates. The one-phonon Raman spectra are…”
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Observation of nitrogen vacancy in proton-irradiated AlxGa1−xN by Zhou, Qiaoying, Manasreh, M. O., Pophristic, M., Guo, S., Ferguson, I. T.

“…The optical absorption spectra of nitrogen vacancy (VN) in proton-irradiated AlxGa1−xN samples are observed. The spectra obtained for samples with 0.55⩽x⩽1…”
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Time-resolved spectroscopy of InxGa1−xN/GaN multiple quantum wells at room temperature by Pophristic, M., Long, F. H., Tran, C., Karlicek, R. F., Feng, Z. C., Ferguson, I. T.

“…We have measured the time-resolved photoluminescence (PL) from a series of InxGa1−xN/GaN (x=0.22) multiple quantum well structures at room temperature…”
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InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers by Jinhyun Lee, Eliseev, P.G., Osinski, M., Dong-Seung Lee, Florescu, D.I., Shiping Guo, Pophristic, M.

“…Nitride-based ultraviolet (UV) heterostructures with InGaN quantum wells and AlInGaN barrier layers have been grown by metal-organic chemical vapor deposition…”
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Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition by Guo, S.P., Pophristic, M., Peres, B., Ferguson, I.T.

“…High-quality InAlGaN alloys, quantum wells and associated light emitting diodes have been grown by metalorganic chemical vapor deposition to produce emitters…”
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Analysis of SAW properties in ZnO/Al/sub x/Ga/sub 1-x/N/c-Al/sub 2/O/sub 3/ structures by Ying Chen, Emanetoglu, N.W., Saraf, G., Pan Wu, Yicheng Lu, Parekh, A., Merai, V., Udovich, E., Dong Lu, Lee, D.S., Armour, E.A., Pophristic, M.

“…Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are…”
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Micro-Raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/sapphire (0001) by CHALDYSHEV, V. V, POLLAK, Fred H, POPHRISTIC, M, GOU, S. P, FERGUSON, I

“…We have investigated the n-dopant distribution in the overgrown and window regions of lateral-epitaxial overgrown GaN/sapphire (0001) using room-temperature…”
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AlGaN UV Focal Plane Arrays by Lamarre, P., Hairston, A., Tobin, S.P., Wong, K.K., Sood, A.K., Reine, M.B., Pophristic, M., Birkham, R., Ferguson, I.T., Singh, R., Eddy Jr, C.R., Chowdhury, U., Wong, M.M., Dupuis, R.D., Kozodoy, P., Tarsa, E.J.

“…This paper presents characterization data, including UV imagery, for 256 × 256 AlGaN UV Focal Plane Arrays (FPAs). The UV‐FPAs have 30 × 30 μm2 unit cells, and…”
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Raman Microscopy of Lateral Epitaxial Overgrowth of GaN on Sapphire by Pophristic, M., Long, F.H., Schurman, M., Ramer, J., Ferguson, I.T.

“…We have used confocal Raman microscopy to investigate lateral epitaxially overgrown (LEO) GaN on sapphire substrates. The one‐phonon Raman spectra are…”
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Ohmic contacts to n-type AlGaN and nitride HEMT epilayers by Wang, P.K., Schweitz, K.O., Pribicko, T.G., Mohney, S.E., Pophristic, M., Gotthold, D.

“…The authors examine the influence of a variety of processing variables on the specific contact resistance of Ti/Al/Pt/Au ohmic contacts to n-type AlGaN, and we…”
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Analysis of SAW properties in ZnO/Al(x)Ga(1-x)N/c-Al(2)O(3) structures by Chen, Ying, Emanetoglu, N W, Saraf, G, Wu, Pan, Lu, Yicheng, Parekh, A, Merai, V, Udovich, E, Lu, Dong, Lee, D S, Armour, E A, Pophristic, M

“…Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are…”
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High Breakdown Voltage and Low Specific On-resistance C-doped GaN-on-sapphire HFETs for Low-loss and High-power Switching Applications by Choi, Y. C., Pophristic, M., Spencer, M. G., Eastman, L. F.

“…High-quality C-doped GaN buffers grown on sapphire substrates were employed for the fabrication of high-power AlGaN/GaN heterojunction field effect transistors…”
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Analysis of SAW properties in ZnO/Al sub(x)Ga sub(1-x)N/c-Al sub(2)O sub(3) structures by Chen, Ying, Emanetoglu, N W, Saraf, G, Wu, Pan, Lu, Yicheng, Parekh, A, Merai, V, Udovich, E, Lu, Dong, Lee, D S, Armour, E A, Pophristic, M

“…Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are…”
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Effects of an Fe-doped GaN Buffer in AlGaN/GaN Power HEMTs on Si Substrate by Choi, Y.C., Eastman, L.F., Pophristic, M.

“…AlGaN/GaN power high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a Si substrate were presented for high power switching applications…”
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Analysis of SAW properties in ZnO/AlxGa1-xN/C-Al2O3 structures by YING CHEN, EMANETOGLU, Nuri William, ARMOUR, Eric A, POPHRISTIC, Milan, SARAF, Gaurav, PAN WU, YICHENG LU, PAREKH, Aniruddh, MERAI, Vinod, UDOVICH, Eric, DONG LU, LEE, Dong S

“…Piezoelectric thin films on high acoustic velocity nonpiezoelectric substrates, such as ZnO, AlN, or GaN deposited on diamond or sapphire substrates, are…”
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