Defect formation in electron-irradiated synthetic diamond annealed in the temperature range 820–1120 K

The phenomenon of the extreme increase of the concentration of dispersed paramagnetic nitrogen in electron-irradiated synthetic diamond specimens annealed in the temperature range 820–1120 K was revealed. It is established that the order of the reaction responsible for the decrease of paramagnetic d...

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Bibliographic Details
Published in:	Materials letters Vol. 34; no. 3; pp. 143 - 147
Main Authors:	Shishonok, E.M, Shipilo, V.B, Popelnuk, G.P, Azarko, I.I, Melnikov, A.A, Filipp, A.R
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 01-03-1998 Elsevier
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electron paramagnetic resonance and relaxation Electrons and positron radiation effects Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Nitrogen impurity Other ions and impurities Paramagnetic Physical radiation effects, radiation damage Physics Structure of solids and liquids; crystallography Synthetic diamond 61.72.Ji 71.55.-i Synthetic diamond Nitrogen impurity 78.60.Hk 76.30.-v Paramagnetic Paramagnetic center Annealing Electron beams Impurities ESR Physical radiation effects Diamonds Nitrogen additions Experimental study Defect formation
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Summary:	The phenomenon of the extreme increase of the concentration of dispersed paramagnetic nitrogen in electron-irradiated synthetic diamond specimens annealed in the temperature range 820–1120 K was revealed. It is established that the order of the reaction responsible for the decrease of paramagnetic defects on annealing at temperatures T ann>1020 K or times no more than one hour is equal to 2, with the activation energy of the process being E a=1.07 eV.
ISSN:	0167-577X 1873-4979
DOI:	10.1016/S0167-577X(97)00149-3