Search Results - "Ponosov, Yuri. S."

Pressure-Induced Reversible Local Structural Disorder in Superconducting AuAgTe4 by Zamyatin, Dmitry A., Pankrushina, Elizaveta A., Streltsov, Sergey V., Ponosov, Yuri S.

“…Here, we report results of the investigation of the lattice dynamics of the sylvanite mineral AuAgTe4 in a wide temperature and pressure range by Raman…”
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Anomalous Behavior of the Elastic and Optical Properties in Bi1.5Sb0.5Te1.8Se1.2 Topological Insulator Induced by Point Defects by Zhevstovskikh, Irina V., Ponosov, Yuri. S., Titova, Svetlana G., Averkiev, Nikita S., Gudkov, Vladimir V., Sarychev, Maksim N., Kuznetsova, Tatyana V., Kokh, Konstantin A., Tereshchenko, Oleg E.

“…The experimental evidence of the defects influence on the optical and elastic properties of single crystal Bi1.5Sb0.5Te1.8Se1.2 has been reported. The extra…”
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Unusual B1-B2 transition in PbSe under high pressure: evidence for two intermediate phases; transport, structural, and optical properties by Ovsyannikov, Sergey V., Shchennikov, Vladimir V., Manakov, Andrei Y., Likhacheva, Anna Y., Ponosov, Yuri S., Mogilenskikh, Viktor E., Vokhmyanin, Alexander P., Ancharov, Alexey I., Skipetrov, Eugenii P.

“…We report the results of a study of the thermoelectric power (Seebeck effect), the electrical resistivity, X‐ray diffraction, and Raman spectroscopy under high…”
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Raman characterization of hydrogen ion implanted silicon: “High-dose effect”? by Ovsyannikov, Sergey V., Shchennikov, Vsevolod V., Shchennikov, Vladimir V., Ponosov, Yuri S., Antonova, Irina V., Smirnov, Sergey V.

“…The Raman spectra of nanostructures formed on silicon Si single-crystalline wafers by implantation with hydrogen ions of fluencies ranging within D∼2×10…”
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Effect of hydrogen implantation on semiconductor–metal transition and high-pressure thermopower in Si by Ovsyannikov, Sergey V., Shchennikov, Vladimir V., Antonova, Irina V., Shchennikov, Vsevolod V., Ponosov, Yuri S.

“…In the present work Czochralski-grown silicon single crystals were investigated implanted with different doses of H + ions. The Si wafers were characterized by…”
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Pressure-Induced Reversible Local Structural Disorder in Superconducting AuAgTe[sub.4] by Zamyatin, Dmitry A, Pankrushina, Elizaveta A, Streltsov, Sergey V, Ponosov, Yuri S

“…Here, we report results of the investigation of the lattice dynamics of the sylvanite mineral AuAgTe[sub.4] in a wide temperature and pressure range by Raman…”
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Anomalous Behavior of the Elastic and Optical Properties in Bi 1.5 Sb 0.5 Te 1.8 Se 1.2 Topological Insulator Induced by Point Defects by Zhevstovskikh, Irina V., Ponosov, Yuri. S., Titova, Svetlana G., Averkiev, Nikita S., Gudkov, Vladimir V., Sarychev, Maksim N., Kuznetsova, Tatyana V., Kokh, Konstantin A., Tereshchenko, Oleg E.

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Raman study of the structural transition in LiVO$_2 by Ponosov, Yuri S, Komleva, Evgenia V, Pankrushina, Elizaveta A, Xu, Haohang, Sui, Yu, Streltsov, Sergey V

“…The results of polarization-dependent Raman spectroscopy of single-crystalline LiVO$_2$ exhibiting transition to a diamagnetic state below $T_c \sim $500K are…”
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Pressure-Induced Phase Transition in Pb 1- x Sn x Se Studied by Raman Spectra by S. Ponosov, Yuri, V. Ovsyannikov, Sergey, V. Shchennikov, Vladimir, E. Mogilenskikh, Viktor

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Silvanite AuAgTe$_4$: a rare case of gold superconducting material by Amiel, Yehezkel, Kafle, Gyanu P, Komleva, Evgenia V, Greenberg, Eran, Ponosov, Yuri S, Chariton, Stella, Lavina, Barbara, Zhang, Dongzhou, Palevski, Alexander, Ushakov, Alexey V, Mori, Hitoshi, Khomskii, Daniel I, Mazin, Igor I, Streltsov, Sergey V, Margine, Elena R, Rozenberg, Gregory Kh

“…Gold is one of the most inert metals, forming very few compounds, some with rather interesting properties, and only two of them currently known to be…”
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Raman characterization of hydrogen ion implanted silicon : High-dose effect? by OVSYANNIKOV, Sergey V, SHCHENNIKOV, Vsevolod V, SHCHENNIKOV, Vladimir V, PONOSOV, Yuri S, ANTONOVA, Irina V, SMIRNOV, Sergey V

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Effect of hydrogen implantation on semiconductor-metal transition and high-pressure thermopower in Si by OVSYANNIKOV, Sergey V, SHCHENNIKOV, Vladimir V, ANTONOVA, Irina V, SHCHENNIKOV, Vsevolod V, PONOSOV, Yuri S

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