Search Results - "Polovinkin, V G"

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    Photoelectric Characteristics of Multielement Photodiode-Based IR FPAs by the Monte Carlo Method on Epitaxial HgCdTe Films by Lee, I. I., Polovinkin, V. G.

    Published in Journal of electronic materials (01-06-2021)
    “…The calculations of photocharacteristics, such as spatial resolution, threshold sensitivity with photosensitive elements sized from 5 µm × 5 µm to 20 µm × 20…”
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    Determination of pore size distribution in thin films by ellipsometric porosimetry by Baklanov, M. R., Mogilnikov, K. P., Polovinkin, V. G., Dultsev, F. N.

    “…We show that ellipsometric porosimetry can be used for the measurement of the pore size distribution in thin porous films deposited on top of any smooth solid…”
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    Analysis of general ambiguity of inverse ellipsometric problem by Polovinkin, V.G, Svitasheva, S.N

    Published in Thin solid films (01-02-1998)
    “…In this paper the set of parameters ( n f , k f , d f ) of homogeneous isotropic films deposited on known semi-infinite substrates are examined which provide…”
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    Postshock sound velocity in mixtures of iron with sulfur and silicon by Anisichkin, V. F., Bordzilovskii, S. A., Karakhanov, S. M., Polovinkin, V. G., Titov, V. M., Turkin, A. I.

    “…Sound velocities in mixtures of iron with sulfur and silicon are calculated from experimental Hugoniot at high pressures. Postshock sound velocities in…”
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    Error function for interpretations of ellipsometric measurements by Polovinkin, V.G.

    Published in Thin solid films (01-05-2004)
    “…As a rule, the results of physical measurements are interpreted by searching for a set of parameters, which minimize some error function (EF) (target function,…”
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    Investigation of optical anisotropy of Langmuir–Blodgett films of long-chain acetylenic acids by Badmaeva, I.A., Nenasheva, L.A., Polovinkin, V.G., Repinsky, S.M., Sveshnikova, L.L.

    Published in Thin solid films (01-05-2004)
    “…Optical anisotropy of Langmuir–Blodgett films and its changes during polymerization under the action of UV irradiation was investigated by means of multiangle…”
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    Simulation of the Spatial Distribution of the Local Quantum Efficiency and Photoelectric Characteristics of Photodiode-Based Infrared Focal Plane Arrays by Polovinkin, V. G., Stuchinsky, V. A., Vishnyakov, A. V., Lee, I. I.

    “…The results of calculation of the spatial distribution of the local quantum efficiency over the area of photodiode-based IR focal plane arrays (IR FPA) are…”
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    Advanced Design of Scanning Infrared Focal Plane Arrays by Dvoretskii, S. A., Kovchavtsev, A. P., Lee, I. I., Polovinkin, V. G., Sidorov, G. Yu, Yakushev, M. V.

    “…Modern designs of time delay and integration (TDI) IR linear scanning focal plane arrays (IR FPAs) are analyzed. Advanced designs of linear IR FPAs with…”
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    High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) by Bazovkin, V.M., Dvoretsky, S.A., Guzev, A.A., Kovchavtsev, A.P., Marin, D.V., Polovinkin, V.G., Sabinina, I.V., Sidorov, G.Yu, Tsarenko, A.V., Vasil’ev, V.V., Varavin, V.S., Yakushev, M.V.

    Published in Infrared physics & technology (01-05-2016)
    “…•Temperature dependence of the reverse currents of p+–n junctions has been studied.•SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been…”
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    High operating temperature SWIR p super(+)-n FPA based on MBE-grown HgCdTe/Si(0 1 3) by Bazovkin, V M, Dvoretsky, SA, Guzev, A A, Kovchavtsev, A P, Marin, D V, Polovinkin, V G, Sabinina, I V, Sidorov, GYu, Tsarenko, A V, Vasil'ev, V V, Varavin, V S, Yakushev, M V

    Published in Infrared physics & technology (01-05-2016)
    “…The characteristics of SWIR (1.6-3 mu m) 320 256 and 1024 1024 focal plane arrays (FPA's) based on n-type In-doped HgCdTe heteroepitaxial layers are reported…”
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    Infrared scanning microscope with high spatial resolution by Bazovkin, V. M., Mzhel’skii, I. V., Kuryshev, G. L., Polovinkin, V. G.

    “…Technical parameters and possible applications of an infrared scanning microscope with a spatial resolution of up to 3 µm are considered. It is shown that the…”
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    A study of thermal processes in high-power InGaN/GaN flip-chip LEDs by IR thermal imaging microscopy by Zakgeim, A. L., Kuryshev, G. L., Mizerov, M. N., Polovinkin, V. G., Rozhansky, I. V., Chernyakov, A. E.

    Published in Semiconductors (Woodbury, N.Y.) (01-03-2010)
    “…Results of an experimental study of temperature fields generated in high-power AlGaInN heterostructure flip-chip light-emitting diodes (LEDs) via their…”
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    Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff λ0.1 = 5.2 μm) by Karandashev, S. A., Matveev, B. A., Mzhelskii, I. V., Polovinkin, V. G., Remennyi, M. A., Rybal’chenko, A. Yu, Stus’, N. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2012)
    “…The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and…”
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    Calibration of photodetectors in IR microscopes by Kuryshev, G. L., Mzhel’skii, I. V., Nastov’yak, A. E., Polovinkin, V. G.

    “…Operation of a photodetector in an infrared microscope has a number of features preventing the application of calibration methods known for thermal imaging…”
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    Thermographic registration of thermal effects in plants exposed to cold stress by Kovchavtcev, A P, Kurishev, G L, Bazovkin, V M, Polovinkin, V G, Nastovyak, A E, Finnikov, K A, Kolesnichenko, A V, Korzun, A M, Voinikov, V K

    “…In present paper the possibility of continuous measurement of thermal effects of plants by thermography was investigated. The problems of measurement precision…”
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