AP-MOVPE growth and characterization of GaAs1-xNx epilayers

Nitrogen incorporation into GaAs epilayers has received interest especially due to band gap decreasing of resultant material. Small fraction of nitrogen makes GaAs 1-x N x useful material for optoelectronic devices grown on GaAs substrates. However, achieving high quality of GaAs 1-x N x /GaAs heter...

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Bibliographic Details
Published in:	2006 29th International Spring Seminar on Electronics Technology pp. 124 - 127
Main Authors:	Pucicki, Damian, Sciana, Beata, Radziewicz, Damian, Tlaczala, Marek, Sek, Grzegorz, Poloczek, Przemyslaw, Serafinczuk, Jaroslaw, Kozlowski, Janusz
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-05-2006
Subjects:	Distributed Bragg reflectors Gallium arsenide Hydrogen Molecular beam epitaxial growth Nitrogen Optical materials Optoelectronic devices Photodetectors Photonic band gap Substrates
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Summary:	Nitrogen incorporation into GaAs epilayers has received interest especially due to band gap decreasing of resultant material. Small fraction of nitrogen makes GaAs 1-x N x useful material for optoelectronic devices grown on GaAs substrates. However, achieving high quality of GaAs 1-x N x /GaAs heterostructures requires MBE (Molecular Beam Epitaxy) or LP-MOVPE (low pressure-metalorganic vapour phase epitaxy) technique. In this article the technological parameters and characterization of epilayers with small nitrogen content obtained by AP-MOVPE are presented. Under our growth conditions we achieve GaAs 1-x N x /GaAs heterostructures which can be used for photodetector applications. We have focused our research on optical, electrical and structural properties of these material.
ISBN:	9781424405503 1424405505
ISSN:	2161-2528
DOI:	10.1109/ISSE.2006.365371