Search Results - "Poloczek, Artur"

High-Speed GaN/GaInN Nanowire Array Light-Emitting Diode on Silicon(111) by Koester, Robert, Sager, Daniel, Quitsch, Wolf-Alexander, Pfingsten, Oliver, Poloczek, Artur, Blumenthal, Sarah, Keller, Gregor, Prost, Werner, Bacher, Gerd, Tegude, Franz-Josef

“…The high speed on–off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by…”
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Effect of contaminations and surface preparation on the work function of single layer MoS2 by Ochedowski, Oliver, Marinov, Kolyo, Scheuschner, Nils, Poloczek, Artur, Bussmann, Benedict Kleine, Maultzsch, Janina, Schleberger, Marika

“…Thinning out MoS2 crystals to atomically thin layers results in the transition from an indirect to a direct bandgap material. This makes single layer MoS2 an…”
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Tunneling‐Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors by Liborius, Lisa, Bieniek, Jan, Possberg, Alexander, Tegude, Franz-Josef, Prost, Werner, Poloczek, Artur, Weimann, Nils

“…Herein, a detailed analysis of leakage mechanisms in epitaxially grown nanowire heterojunction bipolar transistors (NW‐HBTs) is presented. Coaxial…”
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n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions by Liborius, Lisa, Bieniek, Jan, Nägelein, Andreas, Tegude, Franz-Josef, Prost, Werner, Hannappel, Thomas, Poloczek, Artur, Weimann, Nils

“…Herein, the characterization of n‐doped InGaP:Si shells in coaxial not‐intentionally doped (nid)‐GaAs/n‐InGaP as well as n–p–n core–multishell nanowires grown…”
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Toward Nanowire HBT: Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core‐Multishell Nanowires by Liborius, Lisa, Heyer, Fabian, Arzi, Khaled, Speich, Claudia, Prost, Werner, Tegude, Franz‐Josef, Weimann, Nils, Poloczek, Artur

“…In this work the reduction of reverse currents in Au‐catalyzed, MOVPE grown coaxial GaAs nanowire diodes are reported. The reduction is achieved by introducing…”
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Effect of contaminations and surface preparation on the work function of single layer MoS 2 by Ochedowski, Oliver, Marinov, Kolyo, Scheuschner, Nils, Poloczek, Artur, Bussmann, Benedict Kleine, Maultzsch, Janina, Schleberger, Marika

“…Thinning out MoS 2 crystals to atomically thin layers results in the transition from an indirect to a direct bandgap material. This makes single layer MoS 2 an…”
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14-GHz GaNAsSb Unitraveling-Carrier 1.3-μm Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy by KIAN HUA TAN, YOON, Soon F, PATRA, Ardhendu S, JÄGER, Dieter, TANGDIONGGA, Eduward, WAN KHAI LOKE, WICAKSONO, Satrio, TIEN KHEE NG, FEDDERWITZ, Sascha, STÖHR, Andreas, WEISS, Mario, POLOCZEK, Artur, RYMANOV, Vitaly

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14-GHz GaNAsSb Unitraveling-Carrier 1.3- \mu\hbox Photodetectors Grown by RF Plasma-Assisted Nitrogen Molecular Beam Epitaxy by Tan, Kian Hua, Yoon, Soon F., Fedderwitz, Sascha, Stohr, Andreas, Loke, Wan Khai, Wicaksono, Satrio, Ng, Tien Khee, Weiss, Mario, Poloczek, Artur, Rymanov, Vitaly, Patra, Ardhendu S., Tangdiongga, Eduward, Jager, Dieter

“…We report on picosecond pulsed response and 3-dB cutoff frequency of 1.3-μm GaNAsSb unitraveling-carrier photodetectors (PDs) grown by molecular beam epitaxy…”
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Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna by Suhara, M., Takahagi, S., Asakawa, K., Okazaki, T., Nakamura, M., Yamashita, S., Itagaki, Y., Saito, M., Tchegho, A., Keller, G., Poloczek, A., Prost, W., Tegude, Franz-Josef

“…Recently, heavy emitter doping rather than decreasing the barrier thickness has boosted the peak current density of resonant tunneling diodes (RTDs) above…”
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n-doped InGaP Nanowire Shells in Core-Shell pn-junctions by Liborius, Lisa, Bieniek, Jan, Nagelein, Andreas, Tegude, Franz-Josef, Poloczek, Artur, Weimann, Nils

“…We report on the characterization of n-doped InGaP nanowire shells in GaAs/InGaP core-multishell nanowires grown by metal organic vapor phase epitaxy…”
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Wavelength-selective receiver for simultaneous λ=1.3 µm and λ=1.55 µm RF optical transmission by Poloczek, A., Munstermann, B., Nannen, I., Regolin, I., Tegude, F.-J.

“…We report on a dual-wavelength detector consisting of two stacked PIN-diodes with a common center terminal. The aspect of electrical and optical crosstalk in…”
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Monostable-Bistable Threshold Logic Elements in a fully complementary optical receiver circuit for high frequency applications by Matiss, A., Poloczek, A., Brockerhoff, W., Prost, W., Tegude, F.-J.

“…A fully complementary optical receiver design is presented utilizing two Monostable-Bistable Threshold Logic Elements, consisting of four Resonant Tunneling…”
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