Search Results - "Polivtsev, L."

Semiconductor detectors for neutron flux measurements by Litovchenko, P.G., Wahl, W., Bisello, D., Candelori, A., Litovchenko, A.P., Lastovetsky, V.F., Barabash, L.I., Kibkalo, T.I., Polivtsev, L.A., Wyss, J.

“…Silicon detectors with 235U converter for neutron flux measurements over a wide energy range (from thermal up to epithemal neutrons) have been developed. The…”
Get full text

Silicon detectors for γ-ray and β-spectroscopy by Litovchenko, P.G., Wahl, W., Bisello, D., Rando, R., Litovchenko, A.P., Lastovetsky, V.F., Barabash, L.I., Kibkalo, T.I., Polivtsev, L.A., Kolevatov, J.I., Semenov, V.P., Trykov, L.A., Wyss, J.

“…Large active volume Si(Li) detectors were successfully developed for γ-ray spectrometry at room temperature that show a sufficient efficiency and an energy…”
Get full text

Study of neutron pre-irradiated silicon for nuclear detectors by Litovchenko, P.G., Bisello, D., Litovchenko, A.P., Groza, A.A., Dolgolenko, A.P., Khivrich, V.I., Barabash, L.I., Lastovetsky, V.F., Polivtsev, L.A., Khomenkov, V.P., Candelori, A., Rando, R., Wahl, W., Wyss, J., Boscardin, M., Ronchin, S., Zorzi, N., Betta, G.-F.D.

“…The ways of increasing the radiation hardness of silicon were considered. It was then experimentally shown that a preliminary irradiation of the bulk silicon…”
Get full text

Effect of neutron radiation on the photoelectric parameters of p-n-InSe structures by Kovalyuk, Z. D., Politanska, O. A., Litovchenko, P. G., Lastovetskii, V. F., Litovchenko, O. P., Dubovoi, V. K., Polivtsev, L. A.

Get full text

The effect of neutron radiation on the photoelectric parameters of ITO-GaSe structures by Kovalyuk, Z. D., Litovchenko, P. G., Politanska, O. A., Sydor, O. N., Katerynchuk, V. N., Lastovetsky, V. F., Litovchenko, O. P., Dubovoy, V. K., Polivtsev, L. A.

“…The effect of 1-MeV neutrons on the photoelectric parameters of ITO-GaSe heterostructures was studied. It is shown that the observed variations in the…”
Get full text

Possibilities of increase of radiation firmness of semiconductor materials by P. G. Litovchenko, L. I. Barabash, S. V. Berdnichenko, D. Bizello, M. D. Varentsov, V. I. Varnina, A. A.Groza, O. P. Dolgolenko, A. Ya. Karpenko, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, V. N. Pidtynnykh, L. A. Polivtsev, S. B. Smirnov, M. I. Starchik

“…In given article various methods of the increase of the radiation hardness of semiconductors materials such as silicon and InSb are discussed. Parameters of…”
Get full text