Search Results - "Politiek, J"

Refine Results
  1. 1
  2. 2

    Comparison of formoterol, salbutamol and salmeterol in methacholine-induced severe bronchoconstriction by Politiek, MJ, Boorsma, M, Aalbers, R

    Published in The European respiratory journal (01-05-1999)
    “…The onset of the bronchodilating effect of formoterol (12 microg by Turbuhaler) was compared with that of salbutamol (50 microg by Turbuhaler), salmeterol (50…”
    Get full text
    Journal Article
  3. 3

    A 49-year-old woman with well-differentiated fetal adenocarcinoma by Politiek, M J, Vrugt, B, Aalbers, R

    Published in Netherlands journal of medicine (01-04-2001)
    “…A 49-year-old woman underwent a pneumonectomy because of a mass in the middle lobe. Histological examination of the tumour showed a well-differentiated fetal…”
    Get more information
    Journal Article
  4. 4

    Low energy boron implantation in silicon and room temperature diffusion by Collart, E.J.H, Weemers, K, Cowern, N.E.B, Politiek, J, Bancken, P.H.L, van Berkum, J.G.M, Gravesteijn, D.J

    “…In the semiconductor industry Complementary Metal Oxide Semiconductor Technology is the main stream. The continuing trend towards reduction of the transistor…”
    Get full text
    Journal Article
  5. 5

    Proximity gettering of transition metals in silicon by ion implantation by Overwijk, M.H.F., Politiek, J., de Kruif, R.C.M., Zalm, P.C.

    “…We compare the gettering efficiency of C, O and He implantation into Cz-grown silicon. After the getter implantation, with a projected range of 1.2 μm, we…”
    Get full text
    Journal Article
  6. 6

    Ion beam mixing for enhanced electron tunneling in metal-oxide-silicon structures by WALKER, A. J, POLITIEK, J

    Published in Applied physics letters (09-08-1993)
    “…Metal-oxide-silicon (MOS) structures were fabricated to investigate enhanced Fowler–Nordheim tunneling in thin oxides due to ion beam mixing. Ions of germanium…”
    Get full text
    Journal Article
  7. 7

    Relief of dyspnoea by β2-agonists after methacholine-induced bronchoconstriction by van der Woude, Hanneke J, Postma, Dirkje S, Politiek, Mathijs J, Winter, Trea H, Aalbers, René

    Published in Respiratory medicine (01-09-2004)
    “…Virtually all asthma patients use bronchodilators. Formoterol and salbutamol have a rapid onset of bronchodilating effect, whereas salmeterol acts slower. We…”
    Get full text
    Journal Article
  8. 8
  9. 9

    Can carbon-implanted silicon be applied as wide-bandgap emitter? by Oostra, D. J., Politiek, J., Bulle-Lieuwma, C. W. T., Vandenhoudt, D. E. W., Zalm, P. C.

    Published in Journal of materials research (01-07-1996)
    “…We examine the formation of Si1-xCx (x = 0.04–0.2) by means of CFy (y = 0,1,3) implantation in p-type Si, for application as a wide-bandgap emitter in a Si…”
    Get full text
    Journal Article
  10. 10

    Friction reduction and zero wear for 52100 bearing steel by high-dose implantation of carbon by Kobs, K., Dimigen, H., Denissen, C. J. M., Gerritsen, E., Politiek, J., van Ijzendoorn, L. J., Oechsner, R., Kluge, A., Ryssel, H.

    Published in Applied physics letters (15-10-1990)
    “…Ion implantation of carbon in the AISI 52100 bearing steel yields a distinct reduction in friction and wear. This improvement is strongly dependent on the…”
    Get full text
    Journal Article
  11. 11

    Defects in preamorphized single-crystal silicon by AYRES, J. R, BROTHERTON, S. D, SHANNON, J. M, POLITIEK, J

    Published in Applied physics letters (19-11-1990)
    “…Direct electrical characterization of 1-μm-thick Si+ preamorphized and epitaxially regrown silicon layers has revealed a low concentration of residual…”
    Get full text
    Journal Article
  12. 12

    Effects of drain engineering on 0.35 μm NMOS Hot-Carrier degradation by Paulzen, G. M., Woltjer, R., Montree, A. H., Politiek, J.

    “…The Large-Angle-Tilted-Implanted-Drain structure (LATID) has been shown to alleviate hot-carrier induced degradation in NMOSFETs. In a comparison of…”
    Get full text
    Conference Proceeding
  13. 13

    Very-low-noise silicon avalanche photodiodes made by the channeling of aluminum in 〈110〉 silicon by Smeets, E. T. J. M., Politiek, J.

    Published in Applied physics letters (15-07-1979)
    “…A silicon n+pπp+ reach-through avalanche photodiode is described, where the p region is made by the channeling of aluminum atoms in 〈110〉 silicon. Effective…”
    Get full text
    Journal Article
  14. 14

    Quantification of fluorine in SiF x etch residues on silicon with proton induced γ-emission by van Ijzendoorn, L.J., Haverlag, M., Verbeek, A., Politiek, J., de Voigt, M.J.A.

    “…Reactive ion etching of Si wafers with a CF 4 plasma results in the formation of a very thin layer of SiF x . Quantification of the fluorine areal density as a…”
    Get full text
    Journal Article
  15. 15
  16. 16

    Relief of dyspnoea by [beta] 2-agonists after methacholine-induced bronchoconstriction by van der Woude, Hanneke J, Postma, Dirkje S, Politiek, Mathijs J, Winter, Trea H, Aalbers, René

    Published in Respiratory medicine (01-09-2004)
    “…Virtually all asthma patients use bronchodilators. Formoterol and salbutamol have a rapid onset of bronchodilating effect, whereas salmeterol acts slower. We…”
    Get full text
    Journal Article
  17. 17

    Relief of dyspnoea by beta2-agonists after methacholine-induced bronchoconstriction by van der Woude, Hanneke J, Postma, Dirkje S, Politiek, Mathijs J, Winter, Trea H, Aalbers, René

    Published in Respiratory medicine (01-09-2004)
    “…Virtually all asthma patients use brorichodilators. Formoterol and salbutamol have a rapid onset of bronchodilating effect, whereas salmeterol acts slower. We…”
    Get full text
    Journal Article
  18. 18
  19. 19
  20. 20

    Low-energy implantations of decaborane (B/sub 10/H/sub 14/) ion clusters in silicon wafers by Dirks, A.G., Bancken, P.H.L., Politiek, J., Cowern, N.E.B., Snijders, J.H.M., Van Berkum, J.G.M., Verheijen, M.A.

    “…Low-energy implantation with decaborane (B/sub 10/H/sub 14/) ion clusters is suitable for ultra-shallow junction formation. Using a high-voltage research…”
    Get full text
    Conference Proceeding