Search Results - "Poling, B. S."

Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation by Poling, B.S., Via, G.D., Bole, K.D., Johnson, E.E., McDermott, J.M.

“…The reliability of commercial-off-the-shelf (COTS) GaN HEMTs was studied after irradiation using heavy ions of Neon (Ne), Silicon (Si), and Argon (Ar). Devices…”
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Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing by Poling, B.S., Brown, J.L., Heller, E.R., Stumpff, B., Beckman, J.A., Hilton, A.M.

“…•Hot electron or Channel Hot Carrier (CHC) degradation explored in AlGaN/GaN HEMTs.•Hot electron stress test reported for commercial foundry-level AlGaN/GaN…”
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1.8 MeV Proton Testing of Thermally Stabilized GaN HEMT RF Power Devices in Three Operational Modes by McCurdy, M. W., Schrimpf, R. D., Fleetwood, D. M., Bole, K., Poling, B. S.

“…We report summary test results of commercially available GaN HEMT RF power devices from Cree and Qorvo, Inc., with 1.8 MeV protons in three operational modes…”
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Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs by Wang, P. F., Li, X., Zhang, E. X., Jiang, R., McCurdy, M. W., Poling, B. S., Heller, E. R., Schrimpf, R. D., Fleetwood, D. M.

“…The effects of high-field stress are evaluated for industrial-quality AlGaN/GaN HEMTs as a function of bias and temperature. Positive and negative threshold…”
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Reliability testing of AlGaN/GaN HEMTs under multiple stressors by Christiansen, B D, Coutu, Ronald A, Heller, E R, Poling, B S, Via, G David, Vetury, R, Shealy, J B

“…We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded…”
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