Search Results - "Poliani, E"

Nanoscale InN clusters and compositional inhomogeneities in InGaN epitaxial layers quantified by tip-enhanced Raman scattering by Seidlitz, D., Poliani, E., Ries, M., Hoffmann, A., Wagner, M. R.

“…We investigate the compositional homogeneity of InGaN thin films with a high In content grown by migration-enhanced plasma-assisted metal-organic chemical…”
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Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering by Poliani, E, Wagner, M. R, Reparaz, J. S, Mandl, M, Strassburg, M, Kong, X, Trampert, A, Sotomayor Torres, C. M, Hoffmann, A, Maultzsch, J

“…Vertically aligned GaN nanorod arrays with nonpolar InGaN/GaN multi quantum wells (MQW) were grown by MOVPE on c-plane GaN-on-sapphire templates. The chemical…”
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Quantum confinement by an order-disorder boundary in nanocrystalline silicon by Bagolini, L, Mattoni, A, Fugallo, G, Colombo, L, Poliani, E, Sanguinetti, S, Grilli, E

“…We predict theoretically and show experimentally the occurrence of quantum confinement in hydrogenated nanocrystalline silicon. We prove that only valence…”
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Nanocrystalline silicon films as multifunctional material for optoelectronic and photovoltaic applications by Pizzini, S., Acciarri, M., Binetti, S., Cavalcoli, D., Cavallini, A., Chrastina, D., Colombo, L., Grilli, E., Isella, G., Lancin, M., Le Donne, A., Mattoni, A., Peter, K., Pichaud, B., Poliani, E., Rossi, M., Sanguinetti, S., Texier, M., von Känel, H.

“…Nanocrystalline silicon (nc-Si) already attracted a considerable attention as a promising material for photovoltaic applications, while its full optoelectronic…”
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Tuning by means of laser annealing of electronic and structural properties of nc-Si/a-Si:H by Poliani, E., Somaschini, C., Sanguinetti, S., Grilli, E., Guzzi, M., Le Donne, A., Binetti, S., Pizzini, S., Chrastina, D., Isella, G.

“…We report the effect of laser annealing on the structural and electronic properties of nc-Si/a-Si:H samples grown close to the amorphous to nanocrystalline…”
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Electron-phonon interaction in individual strain-free Ga As ∕ Al 0.3 Ga 0.7 As quantum dots by Sanguinetti, S., Poliani, E., Bonfanti, M., Guzzi, M., Grilli, E., Gurioli, M., Koguchi, N.

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