Search Results - "Polakowski, P"

Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD by Lederer, M., Kämpfe, T., Olivo, R., Lehninger, D., Mart, C., Kirbach, S., Ali, T., Polakowski, P., Roy, L., Seidel, K.

“…The local crystal phase and orientation of ferroelectric grains inside TiN/Hf0.5Zr0.5O2/TiN have been studied by the analysis of the local electron beam…”
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High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty by Ali, T., Polakowski, P., Riedel, S., Buttner, T., Kampfe, T., Rudolph, M., Patzold, B., Seidel, K., Lohr, D., Hoffmann, R., Czernohorsky, M., Kuhnel, K., Steinke, P., Calvo, J., Zimmermann, K., Muller, J.

“…We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with…”
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Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics by Ali, T., Polakowski, P., Riedel, S., Büttner, T., Kämpfe, T., Rudolph, M., Pätzold, B., Seidel, K., Löhr, D., Hoffmann, R., Czernohorsky, M., Kühnel, K., Thrun, X., Hanisch, N., Steinke, P., Calvo, J., Müller, J.

“…The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory…”
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A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide by Riedel, S., Polakowski, P., Müller, J.

“…Ferroelectric properties in hafnium oxide based thin films have recovered the scaling potential for ferroelectric memories due to their ultra-thin-film- and…”
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Theory and Experiment of Antiferroelectric (AFE) Si-Doped Hafnium Oxide (HSO) Enhanced Floating-Gate Memory by Ali, T., Polakowski, P., Buttner, T., Kampfe, T., Rudolph, M., Patzold, B., Hoffmann, R., Czernohorsky, M., Kuhnel, K., Steinke, P., Zimmermann, K., Biedermann, K., Eng, L. M., Seidel, K., Muller, J.

“…We report for the first time the integration of silicon-doped hafnium oxide (HSO) antiferroelectric (AFE) material for enhanced floating-gate Flash memory…”
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Next-generation ferroelectric memories based on FE-HfO2 by Mueller, S., Slesazeck, S., Mikolajick, T., Muller, J., Polakowski, P., Flachowsky, S.

“…In recent years, and with the discovery of ferroelectricity in hafnium oxide, it was possible to scale down ferroelectric memory cells in both transistor and…”
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A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond by Dunkel, S., Trentzsch, M., Richter, R., Moll, P., Fuchs, C., Gehring, O., Majer, M., Wittek, S., Muller, B., Melde, T., Mulaosmanovic, H., Slesazeck, S., Muller, S., Ocker, J., Noack, M., Lohr, D.-A, Polakowski, P., Muller, J., Mikolajick, T., Hontschel, J., Rice, B., Pellerin, J., Beyer, S.

“…We show the implementation of a ferroelectric field effect transistor (FeFET) based eNVM solution into a leading edge 22nm FDSOI CMOS technology. Memory…”
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Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28 nm FeFET memory arrays by Mueller, S., Slesazeck, S., Henker, S., Flachowsky, S., Polakowski, P., Paul, J., Smith, E., Müller, J., Mikolajick, T.

“…With the discovery of ferroelectric hafnium oxide (FE-HfO 2 ), the ferroelectric field effect transistor (FeFET), a long-term contender for non-volatile data…”
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Who cares? Changing patterns of childcare in Central and Eastern Europe by Szelewa, Dorota, Polakowski, Michal P.

“…This article compares childcare provisions in the new member countries of the EU. It takes into account two pillars of childcare policy: publicly provided…”
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A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage by Ali, T., Olivo, R., Lederer, M., Hoffmann, R., Steinke, P., Zimmermann, K., Muhle, U., Seidel, K., Muller, J., Polakowski, P., Kuhnel, K., Czernohorsky, M., Kampfe, T., Rudolph, M., Patzold, B., Lehninger, D., Muller, F.

“…We report 1-3 bit/cell FeFET operation through optimized HSO and HZO ferroelectric laminate layers using alumina interlayers. Memory window up to 3.5V,…”
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Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories by Muller, J., Boscke, T. S., Muller, S., Yurchuk, E., Polakowski, P., Paul, J., Martin, D., Schenk, T., Khullar, K., Kersch, A., Weinreich, W., Riedel, S., Seidel, K., Kumar, A., Arruda, T. M., Kalinin, S. V., Schlosser, T., Boschke, R., van Bentum, R., Schroder, U., Mikolajick, T.

“…With the ability to engineer ferroelectricity in HfO 2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a…”
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A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs by Trentzsch, M., Flachowsky, S., Richter, R., Paul, J., Reimer, B., Utess, D., Jansen, S., Mulaosmanovic, H., Muller, S., Slesazeck, S., Ocker, J., Noack, M., Muller, J., Polakowski, P., Schreiter, J., Beyer, S., Mikolajick, T., Rice, B.

“…We successfully implemented a one-transistor (1T) ferroelectric field effect transistor (FeFET) eNVM into a 28nm gate-first super low power (28SLP) CMOS…”
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High endurance strategies for hafnium oxide based ferroelectric field effect transistor by Muller, J., Polakowski, P., Muller, S., Mulaosmanovic, H., Ocker, J., Mikolajick, T., Slesazeck, S., Muller, S., Ocker, J., Mikolajick, T., Flachowsky, S., Trentzsch, M.

“…In this paper potential strategies to overcome the endurance limitations of hafnium oxide based ferroelectric field effect transistors are discussed. These…”
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Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells by Mulaosmanovic, H., Slesazeck, S., Ocker, J., Pesic, M., Muller, S., Flachowsky, S., Muller, J., Polakowski, P., Paul, J., Jansen, S., Kolodinski, S., Richter, C., Piontek, S., Schenk, T., Kersch, A., Kunneth, C., van Bentum, R., Schroder, U., Mikolajick, T.

“…Recent discovery of ferroelectricity in HfO 2 thin films paved the way for demonstration of ultra-scaled 28 nm Ferroelectric FETs (FeFET) as non-volatile…”
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Novel ferroelectric FET based synapse for neuromorphic systems by Mulaosmanovic, H., Ocker, J., Muller, S., Noack, M., Muller, J., Polakowski, P., Mikolajick, T., Slesazeck, S.

“…A compact nanoscale device emulating the functionality of biological synapses is an essential element for neuromorphic systems. Here we present for the first…”
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Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG by Muller, J., Yurchuk, E., Schlosser, T., Paul, J., Hoffmann, R., Muller, S., Martin, D., Slesazeck, S., Polakowski, P., Sundqvist, J., Czernohorsky, M., Seidel, K., Kucher, P., Boschke, R., Trentzsch, M., Gebauer, K., Schroder, U., Mikolajick, T.

“…We report on the most aggressively scaled ferroelectric field effect transistor so far. These were successfully fabricated using ferroelectric Si:HfO 2 in a 28…”
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Correlation between the macroscopic ferroelectric material properties of Si:HfO sub(2) and the statistics of 28 nm FeFET memory arrays by Mueller, S, Slesazeck, S, Henker, S, Flachowsky, S, Polakowski, P, Paul, J, Smith, E, Mueller, J, Mikolajick, T

“…With the discovery of ferroelectric hafnium oxide (FE-HfO sub(2)), the ferroelectric field effect transistor (FeFET), a long-term contender for non-volatile…”
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Correlation between the macroscopic ferroelectric material properties of Si:HfO 2 and the statistics of 28 nm FeFET memory arrays by Mueller, S., Slesazeck, S., Henker, S., Flachowsky, S., Polakowski, P., Paul, J., Smith, E., Müller, J., Mikolajick, T.

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Analysis of Keratoconus genetic factors within Keratoconus Loci and mtDNA by NOWAK, DM, KAROLAK, JA, KUBICKA, M, KULINSKA, K, POLAKOWSKI, P, SZAFLIK, JP, GAJECKA, M

“…Purpose Keratoconus (KTCN) is a multifactorial disorder in which both environmental and genetic factors are involved. Genetic studies have led to the…”
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14nm Ferroelectric FinFET technology with steep subthreshold slope for ultra low power applications by Krivokapic, Z., Rana, U., Galatage, R., Razavieh, A., Aziz, A., Liu, J., Shi, J., Kim, H. J., Sporer, R., Serrao, C., Busquet, A., Polakowski, P., Muller, J., Kleemeier, W., Jacob, A., Brown, D., Knorr, A., Carter, R., Banna, S.

“…Doped hafnia ferroelectric layers with thicknesses from 3 to 8nm are integrated into state-of-the-art 14nm FinFET technology without any further process…”
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