Search Results - "Poingt, Francis"
-
1
Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m
Published in IEEE journal of selected topics in quantum electronics (2007)“…This paper summarizes recent advances on InAs/InP quantum dash (QD) materials for lasers and amplifiers, and QD device performance with particular interest in…”
Get full text
Journal Article -
2
Widely Tunable Photonic Crystal Lasers
Published in Japanese Journal of Applied Physics (01-12-2007)Get full text
Journal Article -
3
Wavelength Selectable Hybrid III-V/Si Laser Fabricated by Wafer Bonding
Published in IEEE photonics technology letters (15-08-2013)“…This letter reports on a hybrid III-V on silicon arrayed waveguide grating laser, fabricated by a wafer bonding technique. The III-V materials provide the…”
Get full text
Journal Article -
4
ElectroAbsorption modulated laser integrated with a semiconductor optiacl Amplifier for 125-km 10.3-Gb/s dispersion-penalty-free transmission
Published in Journal of lightwave technology (01-01-2013)“…We report, for the first time, a transmission experiment over standard fiber at 1.55 _m using an electroabsorption modulated laser (EML) integrated with a…”
Get full text
Journal Article -
5
Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core
Published in IEEE photonics technology letters (01-07-2005)“…Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 μm were grown by gas source molecular beam epitaxy on (100) InP substrates. Room temperature…”
Get full text
Journal Article -
6
Experimental and Theoretical Study of InAs/InGaAsP/InP Quantum Dash Lasers
Published in IEEE journal of quantum electronics (01-12-2009)“…We present a combined theoretical and experimental analysis of InAs/InGaAsP/InP quantum dash lasers. Calculations using an 8 band k.p Hamiltonian show that…”
Get full text
Journal Article -
7
Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 [mu]m
Published in IEEE journal of selected topics in quantum electronics (01-01-2007)“…Furthermore, we demonstrate that QD Fabry-Perot (FP) lasers, owing to the small confinement factor and the three-dimensional (3-D) quantification of electronic…”
Get full text
Journal Article -
8
Analysis of InAs/InP quantum dash lasers
Published in 2008 IEEE 21st International Semiconductor Laser Conference (01-09-2008)“…Calculations show electrons are not confined in the dashes in 1.5 mum InAs/InGaAsP/InP quantum dash in a well structures. Calculations and photoabsorption…”
Get full text
Conference Proceeding -
9
Polarisation insensitive injection locked Fabry-Perot laser diodes for 2.5Gb/s WDM access applications
Published in 2008 34th European Conference on Optical Communication (01-09-2008)“…Polarisation insensitive injection locking of two-section Fabry-Perot laser diodes is demonstrated, allowing to achieve error free transmission through 50 km…”
Get full text
Conference Proceeding -
10
Optical injection of quantum dot and quantum dash semiconductor lasers
Published in CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference (01-06-2009)“…In this communication, we report experimental results on optical injection of quantum dot (Q-dot) and quantum dash (Q-dash) semiconductor multi-mode lasers. We…”
Get full text
Conference Proceeding