Search Results - "Poindexter, E. H."

Fermi level pinning in low-temperature molecular beam epitaxial GaAs by SHEN, H, RONG, F. C, LUX, R, PAMULAPATI, J, TAYSING-LARA, M, DUTTA, M, POINDEXTER, E. H, CALDERON, L, LU, Y

“…The Fermi level position in low temperature (LT) GaAs has been studied by photoreflectance (PR). By etching the LT-GaAs to a different thickness, we find the…”
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Vacancy formation in (Pb,La)(Zr,Ti)O{sub 3} capacitors with oxygen deficiency and the effect on voltage offset by Friessnegg, T., Aggarwal, S., Ramesh, R., Nielsen, B., Poindexter, E. H., Keeble, D. J.

“…Vacancy-related defect profiles have been measured for La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/(Pb{sub 0.9}La{sub 0.1})(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}/La{sub…”
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Charge trapping centers in N-rich silicon nitride thin films by WARREN, W. L, KANICKI, J, RONG, F. C, POINDEXTER, E. H, MCWHORTER, P. J

“…We have examined the behavior of the Si dangling-bond center in regard to charge trapping in N-rich amorphous hydrogenated silicon nitride thin films. The…”
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Characteristic electronic defects at the Si-SiO2 interface by JOHNSON, N. M, BIEGELSEN, D. K, MOYER, M. D, CHANG, S. T, POINDEXTER, E. H, CAPLAN, P. J

“…On unannealed, thermally oxidized silicon, electron spin resonance reveals an oriented interface defect which is termed the Pb center and identified as the…”
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Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers by SUN, H.-J, WATKINS, G. D, RONG, F. C, FOTIADIS, L, POINDEXTER, E. H

“…Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance…”
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Electrically detected magnetic resonance of a transition metal related recombination center in Si p-n diodes by RONG, F. C, GERARDI, G. J, BUCHWALD, W. R, POINDEXTER, E. H, UMLOR, M. T, KEEBLE, D. J, WARREN, W. L

“…A hyperfine structure has been observed by electrically detected magnetic resonance from a Si p–n diode. From the hyperfine splitting, and the natural…”
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Rechargeable E' centers in sputter-deposited silicon dioxide films by ZVANUT, M. E, FEIGL, F. J, FOWLER, W. B, RUDRA, J. K, CAPLAN, P. J, POINDEXTER, E. H, ZOOK, J. D

“…An electron trapping instability in silicon dioxide films sputtered onto silicon substrates was analyzed by metal-oxide-semiconductor electrical methods and…”
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New features of electrically detected magnetic resonance in silicon p–n diodes by Hornmark, E.T, Lyon, S.A, Poindexter, E.H, Young, C.F

“…Electrically detected magnetic resonance (EDMR), due to spin-dependent recombination (SDR), in commercial silicon p–n diodes is re-examined. New features were…”
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Chemical reactions of hydrogenous species in the Si/SiO2 system by POINDEXTER, E. H

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Low-temperature electron spin resonance investigations of silicon paramagnetic defects in silicon nitride by WARREN, W. L, RONG, F. C, POINDEXTER, E. H, KANICKI, J, GERARDI, G. J

“…We have reproduced and extended some recently reported electron spin resonance (ESR) measurements related to the nature of the dominant charge traps in silicon…”
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Electron-paramagnetic-resonance study of the isolated arsenic antisite in electron irradiated GaAs and its relation to the EL2 center by RONG, F. C, BUCHWALD, W. R, HARMATZ, M, POINDEXTER, E. H, WARREN, W. L

“…Arsenic antisites produced in GaAs by room-temperature electron irradiation (RTEI) are examined by electron paramagnetic resonance (EPR). For the first time,…”
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Effect of beam energy and anneal history on trivalently bonded silicon defect centers induced by ion beam etching by Singh, R., Fonash, S. J., Caplan, P. J., Poindexter, E. H.

“…Ion beam etching produces a modified layer at the surface of silicon which subsequently affects the electrical characteristics of devices fabricated on these…”
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Nature of Pb-like dangling-orbital centers in luminescent porous silicon by RONG, F. C, HARVEY, J. F, POINDEXTER, E. H, GERARDI, G. J

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Interface traps and Pb centers in oxidized (100) silicon wafers by GERARDI, G. J, POINDEXTER, E. H, CAPLAN, P. J, JOHNSON, N. M

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Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset by Friessnegg, T., Aggarwal, S., Ramesh, R., Nielsen, B., Poindexter, E. H., Keeble, D. J.

“…Vacancy-related defect profiles have been measured for La0.5Sr0.5CoO3/(Pb0.9La0.1)(Zr0.2Ti0.8)O3/La0.5Sr0.5CoO3 ferroelectric capacitors using a…”
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Nature of P b -like dangling-orbital centers in luminescent porous silicon by Rong, F. C., Harvey, J. F., Poindexter, E. H., Gerardi, G. J.

“…The Pb-like dangling-orbit centers in luminescent porous silicon (LPSi) have been enhanced to very high concentration (1015 cm−2) by gentle oxidation. High…”
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Paramagnetic point defects in silicon nitride and silicon oxynitride thin films on silicon by Warren, William L., Kanicki, Jerzy, Poindexter, Edward H.

“…Silicon nitride and silicon oxynitride thin films on silicon often contain paramagnetic point defects. In the nitride, major defects are the K 0 center ( •SiN…”
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Electron paramagnetic resonance of nitrogen pairs and triads in 6H-SiC: Analysis and identification by Young, C. F., Xie, K., Poindexter, E. H., Gerardi, G. J., Keeble, D. J.

“…A study of electron paramagnetic resonance (EPR) of nitrogen-doped 6H-SiC is reported here. By use of both first- and second-harmonic EPR detection, the…”
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Dynamic nuclear polarization studies of labile complex formation between lithium ion and nitronyl nitroxide or imidazoline-1-oxyl radical ligands by Wagner, B. E, Linowski, J. W, Potenza, J. A, Bates, R. D, Helbert, J. N, Poindexter, E. H

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Identification of paramagnetic Pb+3 defects in lead zirconate titanate ceramics by WARREN, W. L, TUTTLE, B. A, MCWHORTER, P. J, RONG, F. C, POINDEXTER, E. H

“…We report the first observation of positively charged Pb+3 defect centers in lead zirconate titanate (PZT) ceramics using electron paramagnetic resonance. The…”
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