Search Results - "Pohorelec, O."

Growth and performance of n++ GaN cap layer for HEMTs applications by Kuzmík, J., Blaho, M., Gregušová, D., Eliáš, P., Pohorelec, O., Hasenöhrl, S., Haščík, Š., Gucmann, F., Zápražný, Z., Dobročka, E., Kyambaki, M., Konstantinidis, G.

“…Apart from providing high-quality ohmic contacts to III-N devices, n++ GaN cap layers can eliminate surface-related current collapse effects in…”
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Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs by Pohorelec, O., Ťapajna, M., Gregušová, D., Gucmann, F., Hasenöhrl, S., Haščík, Š., Stoklas, R., Seifertová, A., Pécz, B., Tóth, L., Kuzmík, J.

“…[Display omitted] •Normally-off devices prepared by polarization engineering using InGaN layer.•Polarization charge at the InGaN/AlGaN interface confirmed by…”
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Technology and application of in-situ AlOx layers on III-V semiconductors by Kúdela, R., Šoltýs, J., Kučera, M., Stoklas, R., Gucmann, F., Blaho, M., Mičušík, M., Pohorelec, O., Gregor, M., Brytavskyi, I., Dobročka, E., Gregušová, D.

“…•Al-layer prepared in MOCVD and oxidized in air – promising in control the GaAs surface condition. This work describes the preparation of a passivation AlOx…”
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E-leaming as a support for student team projects by Matuska, M., Hudac, S., Janco, M., Ondrejka, P., Pohorelec, O., Ziska, M., Vojs, M., Hanic, M., Stuchlikova, L.

“…This article deals with practical implementation of e-learning course "Team project" as a support of student team project "Intelligent traffic light"…”
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Interactive forms of technical education support in primary and secondary schools by Hanic, M., Kosa, A., Kovacova, S., Benko, P., Hagara, M., Kubinec, P., Kovac, J., Florovic, M., Marton, M., Vojs, M., Pohorelec, O., Hrbacek, J., Stuchlikova, L.

“…This papers presents, how eLearning or its modification, the blended learning plays a key role in increase of scholars' interest at Elementary and Middle…”
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DC and pulsed IV characterisation of AlGaN/GaN MOS-HEMT structures with Al2O3 gate dielectric prepared by various techniques by Gucmann, F., Gregusova, D., Valik, L., Tapajna, M., Hascik, S., Husekova, K., Frohlich, K., Pohorelec, O., Kuzmik, J.

“…AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) represent an important technology for future high-efficient power and RF…”
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Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown A12O3 gate dielectric by Tapajna, M., Husekova, K., Pohorelec, O., Valik, L., Hascik, S., Gucmann, F., Frohlich, K., Gregusova, D., Kuzmik, J.

“…Suppression of surface donors (SDs) in AlGaN/GaN MOS-HEMTs represents a promising approach towards realization of normally-off switching devices with high…”
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