Search Results - "Pohl, U.W"

High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays by Kettler, T., Posilovic, K., Karachinsky, L.Ya, Ressel, P., Ginolas, A., Fricke, J., Pohl, U.W., Shchukin, V.A., Ledentsov, N.N., Bimberg, D., Jonsson, J., Weyers, M., Erbert, G., Trankle, G.

“…Lasers with a waveguide based on a longitudinal photonic band crystal designed for 850 nm emission are investigated. They demonstrate ultranarrow vertical beam…”
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Ripening of self-organized InAs quantum dots by Pötschke, K, Müller-Kirsch, L, Heitz, R, Sellin, R.L, Pohl, U.W, Bimberg, D, Zakharov, N, Werner, P

“…The temporal evolution of the size and the shape of self-organized InAs/GaAs quantum dots (QDs) grown using MOCVD is investigated. During a growth interruption…”
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Structure of InAs quantum dots-in-a-well nanostructures by Lenz, A., Eisele, H., Timm, R., Ivanova, L., Liu, H.-Y., Hopkinson, M., Pohl, U.W., Dähne, M.

“…InAs/InGaAs quantum dots-in-a-well nanostructures based on GaAs are a promising candidate for optoelectronic devices with the important emission wavelength of…”
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Spectroscopic ellipsometry during metalorganic vapor phase epitaxy of InN by Schmidtling, T., Drago, M., Pohl, U.W., Richter, W.

“…Metalorganic vapor phase epitaxy of indium nitride (InN) on sapphire was studied and optimized in situ by spectroscopic ellipsometry. Layers with smooth…”
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InN growth and annealing investigations using in-situ spectroscopic ellipsometry by Drago, M., Schmidtling, T., Werner, C., Pristovsek, M., Pohl, U.W., Richter, W.

“…The thermal stability of InN in various ambients was investigated using in-situ spectroscopic ellipsometry. Improvement of the structural quality was found for…”
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Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers by Strittmatter, A., Reißmann, L., Seguin, R., Rodt, S., Brostowski, A., Pohl, U.W., Bimberg, D., Hahn, E., Gerthsen, D.

“…Quantum dot formation in InGaN layers embedded in a GaN matrix is studied as a function of total reactor pressure during low-pressure MOCVD growth. An…”
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Thin GaSb insertions and quantum dot formation in GaAs by MOCVD by Müller-Kirsch, L, Pohl, U.W, Heitz, R, Kirmse, H, Neumann, W, Bimberg, D

“…Self-organized formation of GaSb quantum dots during MOCVD growth has been studied. Thin GaSb layers are deposited on GaAs (0 0 1), followed by a growth…”
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MOCVD of vertically stacked CdSe/ZnSSe quantum islands by Pohl, U.W, Engelhardt, R, Türck, V, Bimberg, D

“…Stacks of nominally one monolayer thick CdSe sheets, separated by ZnSSe barriers, were grown by metallorganic chemical vapor deposition. Cadmium interdiffusion…”
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A novel approach for improved green-emitting II-VI lasers by Strassburg, M., Schulz, O., Pohl, U.W., Bimberg, D., Itoh, S., Nakano, K., Ishibashi, A., Klude, M., Hommel, D.

“…New concepts to improve the performance of green-emitting laser diodes, based on the ZnSe system, are presented. The benefits of implantation-induced…”
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Quantum-dot semiconductor disk lasers by Germann, T.D., Strittmatter, A., Pohl, U.W., Bimberg, D., Rautiainen, J., Guina, M., Okhotnikov, O.G.

“…We demonstrate quantum-dot (QD)-based, optically pumped semiconductor disk lasers (SDLs) for wavelengths ranging from 950 to 1210 nm. QDs grown either in the…”
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Size-dependent binding energies and fine-structure splitting of excitonic complexes in single InAs/GaAs quantum dots by Rodt, S., Seguin, R., Schliwa, A., Guffarth, F., Pötschke, K., Pohl, U.W., Bimberg, D.

“…A systematic study of excitonic complexes confined in single InAs/GaAs quantum dots is presented. Emphasis is placed on the recombination energies of the…”
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MOCVD of InGaAs/GaAs quantum dots for lasers emitting close to 1.3 μm by Germann, T.D., Strittmatter, A., Kettler, Th, Posilovic, K., Pohl, U.W., Bimberg, D.

“…Laser diodes based on InGaAs quantum dots (QDs) operating at 1250 nm with ultra-low threshold current densities of 66 A/cm 2, transparency current densities of…”
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Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots by Strittmatter, A., Germann, T.D., Kettler, Th, Posilovic, K., Pohl, J., Pohl, U.W., Bimberg, D.

“…The blue shift of metalorganic vapor phase epitaxy grown 1.3 μm InGaAs quantum dot (QD) emission wavelength during stacking and overgrowth is investigated…”
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Structure of InAs/GaAs quantum dots grown with Sb surfactant by Timm, R., Eisele, H., Lenz, A., Kim, T.-Y., Streicher, F., Pötschke, K., Pohl, U.W., Bimberg, D., Dähne, M.

“…InAs quantum dots in GaAs, grown under the presence of Sb by metalorganic chemical vapor deposition, were studied with cross-sectional scanning tunneling…”
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Self-organized formation of shell-like InAs/GaAs quantum dot ensembles by Pohl, U.W., Pötschke, K., Lifshits, M.B., Shchukin, V.A., Jesson, D.E., Bimberg, D.

“…Formation of a multimodal quantum dot (QD) ensemble by strained layer epitaxy of InAs on GaAs near the critical value for the onset of the 2D–3D transition is…”
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Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy by Pohl, U.W., Pötschke, K., Kaiander, I., Zettler, J.-T., Bimberg, D.

“…Reflectance and reflectance anisotropy spectroscopy (RAS) were used to control in-situ the complex MOCVD growth process of both InGaAs/GaAs quantum dots (QDs)…”
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Control of structural and excitonic properties of self-organized InAs/GaAs quantum dots by Pohl, U.W., Seguin, R., Rodt, S., Schliwa, A., Pötschke, K., Bimberg, D.

“…A systematic dependence of excitonic properties on the size of self-organized InAs/GaAs quantum dots is presented. The bright exciton fine-structure splitting…”
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Improved optical confinement in 1.55 μm InAs/GaInAsP quantum dot lasers grown by MOVPE by Franke, D., Harde, P., Kreissl, J., Moehrle, M., Rehbein, W., Kuenzel, H., Pohl, U.W., Bimberg, D.

“…MOVPE-grown InAs quantum dots (QDs) implemented as active layers in 1.55 mum emitting InGaAsP/InP broad-area laser devices show improved characteristics with…”
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Surface flattening during MOCVD of thin GaAs layers covering InGaAs quantum dots by Sellin, R, Heinrichsdorff, F, Ribbat, Ch, Grundmann, M, Pohl, U.W, Bimberg, D

“…Methods to re-establish a flat growth front on top of the corrugated surface of InGaAs quantum dots (QDs) during MOCVD are reported. Overgrowth temperatures at…”
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Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots by Pohl, U.W., Pötschke, K., Schliwa, A., Lifshits, M.B., Shchukin, V.A., Jesson, D.E., Bimberg, D.

“…Self-organized formation and evolution of quantum dot (QD) ensembles with a multimodal size distribution is reported. Such ensembles form after fast deposition…”
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