Search Results - "Podoskin, A.A."

O12 Mathematical model of transcutaneous laser ablation of leg vessels by Efremov, V.A, Filatov, A.A, Podoskin, A.A

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Gain switching sub-ns pulse laser diode optimization for time-of-flight laser rangefinding by Golovin, V.S., Slipchenko, S.O., Podoskin, A.A., Rastegaeva, M.G., Pikhtin, N. A.

“…The problem of designing laser heterostructures for generating sub-ns laser pulses of a given duration with a maximum peak power in the gain-switching mode is…”
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High fill-factor kW-level tunnel-coupled diode laser bar ( \lambda=910\ \text) for 100-ns pulse sources by Podoskin, A.A., Slipchenko, S.O., Veselov, D.A., Strelets, V.A., Rudova, N.A., Pikhtin, N.A., Bagaev, T. A., Ladugin, M.A., Marmalyuk, A.A., Kop'ev, P.S.

“…Pulsed 910 nm laser sources based on triple tunnel-coupled AlGaAs/InGaAs/GaAs heterostructures were developed and studied. High fill-factor (96%) microbars…”
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Mode selection in the external cavity of a single-mode lasers microarray (1060nm) by Podoskin, A.A., Zolotarev, V.V., Shashkin, I. S., Slipchenko, S.O., Romanovich, D.N., Soboleva, O.S., Strelets, V.A., Kapitonov, V.A., Bakhvalov, K.V., Kazakova, A.E., Fomin, E., Pikhtin, N. A.

“…The effect of an external resonator on the operation of a single-mode stripes laser bar based on an asymmetric InGaAs/AlGaAs/GaAs heterostructure is studied…”
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Hybrid and integrated high-power pulse laser-thyristors by Zhelnin, A.I., Bagaev, T.A., Gultikov, N.V., Ladugin, M.A., Marmalyuk, A.A., Kurnyavko, Yu.Y., Krichevskii, V.V., Morozyuk, A.A., Konyaev, Y.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.

“…High-power hybrid semiconductor lasers - thyristors (λ = 900 - 920 nm) consisting of thyristor crystals soldered in series with an integrated semiconductor…”
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Laser heterostructures with a broadened MQW waveguide for high-power and sub-ns-laser-pulse-width operation by Slipchenko, S.O., Podoskin, A.A., Golovin, V.S., Shamakhov, V.V., Arsentiev, I.N., Bondarev, A.D., Nikolaev, D.N., Pikhtin, N.A., Kop'ev, P.S.

“…Design of a structure with QWs distributed in a broadened waveguide layer is presented, which ensures mode selection, preserves the fundamental mode, provides…”
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Implementation of energy barrier layers for 1550 nm high-power laser diodes by Veselov, D.A., Pikhtin, N.A., Slipchenko, S.O., Kirichenko, I.K., Podoskin, A.A., Shuvalova, N.V., Rudova, N.A., Vavilova, L.S., Rastegaeva, M.G., Bagaev, T.A., Svetogorov, V.N., Padalitsa, A.A., Ryaboshtan, Yu.L., Ladugin, M.A., Marmalyuk, A.A.

“…The influence of a thin AlInAs energy barrier on the efficiency of 1550 nm high-power semiconductor lasers efficiency has been experimentally studied. It was…”
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High-Speed Bridge Photodetectors for the Mid-IR Spectral Region by Pivovarova, A. A., Kunitsyna, E. V., Konovalov, G. G., Slipchenko, S. O., Podoskin, A. A., Andreev, I. A., Pikhtin, N. A., Il’inskaya, N. D., Chernyakov, A. E., Yakovlev, Yu. P.

“…Uncooled bridge photodetectors based on InAs/InAsSbP heterostructures for the mid-IR region of the spectrum are presented. The bridge structure is…”
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Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers by Podoskin, A. A., Shashkin, I. S., Slipchenko, S. O., Pikhtin, N. A., Tarasov, I. S.

“…A model describing the operation of a completely optical cell, based on the competition of lasing of Fabry-Perot cavity modes and the high-Q closed mode in…”
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On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range by Slipchenko, S. O., Podoskin, A. A., Vasil’eva, V. V., Pikhtin, N. A., Rozhkov, A. V., Gorbatyuk, A. V., Zolotarev, V. V., Veselov, D. A., Jabotinskii, A. V., Petukhov, A. A., Tarasov, I. S., Bagaev, T. A., Zverkov, M. V., Konyaev, V. P., Kurniavko, Y. V., Ladugin, M. A., Lobintsov, A. V., Marmalyuk, A. A., Padalitsa, A. A., Simakov, V. A.

“…A high power laser-thyristor structure providing low current-related and optical losses is developed. The possibility of controlling the lasing turn-on delay…”
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Analysis of high-repetition-rate high-power laser pulse generation dynamics using a one-dimensional model of rate equations by Rizaev, A.E., Podoskin, A.A., Bondarev, A.D., Sokolova, Z.N., Kapitonov, V.A., Malets, V.N., Slipchenko, S.O., Pikhtin, N.A.

“…This study uses a numerical model to analyze the dynamics of high-power semiconductor lasers pumped by a high-repetition rate pulse sequence. It explores the…”
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High power photoactivated current switches for generating sub-ns electrical pulses by Shushkanov, I.V., Podoskin, A.A., Arsentiev, I.N., Rudova, N.A., Klimov, A.A., Kazakova, A.E., Slipchenko, S.O., Pikhtin, N.A.

“…Photoactivated current switches for pumping diode laser stacks with ns and sub-ns current pulses are studied. Test optical pulse: 860 nm, 50 ps leading edge,…”
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Semiconductor lasers in gain-switching mode for high power sub-ns optical pulses by Shushkanov, I.V., Podoskin, A.A., Zadorozhniy, M.G., Klimov, A.A., Vavilova, L.S., Slipchenko, S.O., Pikhtinx, N.A.

“…Broad-arealasers with a 100 \ \mu \mathrm{m} aperture based on heterostructures with double asymmetry and active regions at wavelengths of 850 nm using bulk 45…”
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Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions by Slipchenko, S. O., Podoskin, A. A., Shashkin, I. S., Zolotarev, V. V., Pikhtin, N. A., Tarasov, I. S.

“…A new model describing the decrease in the emission efficiency and optical output power of a semiconductor laser above the lasing threshold of the Fabry-Perot…”
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AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide by Slipchenko, S. O., Podoskin, A. A., Vinokurov, D. A., Bondarev, A. D., Kapitonov, V. A., Pikhtin, N. A., Kop’ev, P. S., Tarasov, I. S.

“…Approaches to the development of laser heterostructures with a broadened single-mode waveguide are studied theoretically and experimentally. It is shown that…”
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Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers by Slipchenko, S. O., Podoskin, A. A., Vinokurov, D. A., Stankevich, A. L., Leshko, A. Y., Pikhtin, N. A., Zabrodskiy, V. V., Tarasov, I. S.

“…Radiative characteristics of semiconductor stripe-contact lasers operating under quenching conditions of Fabry-Perot-mode lasing are studied. It is found that…”
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The dynamics of laser generation in single-mode semiconductor (1060 nm) emitters microbar under sub-ns pulse pumping by Podoskin, A.A., Kazakova, A.E., Strelets, V.A., Sokolova, Z.N., Lyutetskii, A.V., Leshko, A.Yu, Kruchkov, V.A., Slipchenko, S.O., Pikhtin, N.A.

“…The operation of single-mode semiconductor (1060 nm) emitters microbar without optical coupling between the stripes was studied. The operation in the regime of…”
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Semiconductor lasers with internal wavelength selection by Zolotarev, V. V., Leshko, A. Yu, Lyutetskii, A. V., Nikolaev, D. N., Pikhtin, N. A., Podoskin, A. A., Slipchenko, S. O., Sokolova, Z. N., Shamakhov, V. V., Arsent’ev, I. N., Vavilova, L. S., Bakhvalov, K. V., Tarasov, I. S.

“…Laser diodes with a deep built-in trapezoidal large-period diffraction grating have been developed on the basis of InGaAs/GaAs/AlGaAs heterostructures. The…”
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Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures by Slipchenko, S. O., Podoskin, A. A., Pikhtin, N. A., Stankevich, A. L., Rudova, N. A., Leshko, A. Y., Tarasov, I. S.

“…Spontaneous emission, optical loss, and gain spectra of a laser heterostructure with a quantum-well InGaAs active region have been studied at various optical…”
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Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures by Slipchenko, S. O., Podoskin, A. A., Pikhtin, N. A., Zolotarev, V. V., Shashkin, I. S., Leshko, A. Y., Lutetskyi, A. V., Rastegaeva, M. G., Tarasov, I. S., Kop’ev, P. S.

“…Small-signal-controlled optical modulator structure capable of operation at several wavelengths is suggested. It is shown that the application of spectrally…”
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