Search Results - "Plombon, J."

Nanocrystalline copper films are never flat by Zhang, Xiaopu, Han, Jian, Plombon, John J., Sutton, Adrian P., Srolovitz, David J., Boland, John J.

“…We used scanning tunneling microscopy to study low-angle grain boundaries at the surface of nearly planar copper nanocrystalline (111) films. The presence of…”
Get full text

Influence of phonon, geometry, impurity, and grain size on Copper line resistivity by Plombon, J. J., Andideh, Ebrahim, Dubin, Valery M., Maiz, Jose

“…The authors report on the resistivity of submicron copper lines ranging from 75to500nm linewidths as a function of temperature in the 10Kto380K interval. Their…”
Get full text

High-frequency electrical properties of individual and bundled carbon nanotubes by Plombon, J. J., O’Brien, Kevin P., Gstrein, Florian, Dubin, Valery M., Jiao, Yang

“…Bundles of single wall carbon nanotubes have been proposed as an interconnect that could potentially replace copper in state-of-the-art…”
Get full text

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices by Vaz, Diogo C., Lin, Chia-Ching, Plombon, John J., Choi, Won Young, Groen, Inge, Arango, Isabel C., Chuvilin, Andrey, Hueso, Luis E., Nikonov, Dmitri E., Li, Hai, Debashis, Punyashloka, Clendenning, Scott B., Gosavi, Tanay A., Huang, Yen-Lin, Prasad, Bhagwati, Ramesh, Ramamoorthy, Vecchiola, Aymeric, Bibes, Manuel, Bouzehouane, Karim, Fusil, Stephane, Garcia, Vincent, Young, Ian A., Casanova, Fèlix

“…As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices…”
Get full text

2D Materials in the BEOL by Naylor, C. H., Maxey, K., Jezewski, C., O'Brien, K. P., Penumatcha, A. V., Kavrik, M. S., Agrawal, B., Littlefield, C. V., Lux, J., Barley, B., Weber, J. R., Gupta, A. Sen, Dorow, C. J., Arefin, N., King, S., Chebiam, R., Plombon, J., Clendenning, S. B., Avci, U. E., Kobrinsky, M., Metz, M.

“…2D materials, such as Transition Metal Dichalcogenides (TMDs), have potential for large impact in future technologies due to their inherent atomic thickness…”
Get full text

Ultra-High‑k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p‑Type High-Performance Transistors by Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J., Maxey, Kirby, O’Brien, Kevin P., Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa Ekin, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B., Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A.

“…The experimental demonstration of a p-type 2D WSe2 transistor with a ferroelectric perovskite BaTiO3 gate oxide is presented. The 30 nm thick BaTiO3 gate stack…”
Get full text

Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors by Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J, Maxey, Kirby, O'Brien, Kevin P, Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B, Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A

“…The experimental demonstration of a p-type 2D WSe transistor with a ferroelectric perovskite BaTiO gate oxide is presented. The 30 nm thick BaTiO gate stack…”
Get full text

All-Electrical Spin-to-Charge Conversion in Sputtered BixSe1-x by Choi, Won Young, Arango, Isabel C., Pham, Van Tuong, Vaz, Diogo C., Yang, Haozhe, Groen, Inge, Lin, Chia-Ching, Kabir, Emily S., Oguz, Kaan, Debashis, Punyashloka, Plombon, John J., Li, Hai, Nikonov, Dmitri E., Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix

“…One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it…”
Get full text

Electron transport properties of sub-3-nm diameter copper nanowires by Jones, Sarah L. T., Sanchez-Soares, Alfonso, Plombon, John J., Kaushik, Ananth P., Nagle, Roger E., Clarke, James S., Greer, James C.

Get full text

Low-voltage and high-speed switching of a magnetoelectric element for energy efficient compute by Debashis, Punyashloka, Plombon, John J., Lin, Chia-Ching, Liao, Yu-Ching, Li, Hai, Nikonov, Dmitri E., Adams, Dominique, Rogan, Carly, Dc, Mahendra, Radosavljevic, Marko, Clendenning, Scott B., Young, Ian A.

“…150 mV voltage-driven switching of a ferromagnet (FM) exchange-coupled to 6-nm-thick lanthanum-doped BiFeO 3 (LBFO) was demonstrated at room temperature (RT)…”
Get full text

Connecting Single Molecule Electrical Measurements to Ensemble Spectroscopic Properties for Quantification of Single-Walled Carbon Nanotube Separation by Kim, Woo-Jae, Lee, Chang Young, O’brien, Kevin P., Plombon, John J., Blackwell, James M., Strano, Michael S.

“…We directly compared ensemble spectroscopic measurements to a statistically rigorous single molecule electrical characterization of individual SWNT devices…”
Get full text

A Selectively Colorful yet Chilly Perspective on the Highs and Lows of Dielectric Materials for CMOS Nanoelectronics by King, S., Plombon, J., Bielefeld, J., Blackwell, J., Vyas, S., Chebiam, R., Naylor, C., Michalak, D., Kobrinsky, M., Gstrein, F., Metz, M., Clarke, J., Thapa, R., Paquette, M., Vemuri, V., Strandwitz, N., Fan, Y., Orlowski, M.

“…The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of…”
Get full text

Lesion size following Gamma Knife treatment for functional disorders by Friehs, G M, Norén, G, Ohye, C, Duma, C M, Marks, R, Plombon, J, Young, R F

“…In this study we investigated the reproducibility and consistency of the size of radiosurgical lesions produced for functional disorders. The T1…”
Get more information

Far-infrared capture of electrons by DX centers by PLOMBON, J. J, BEWLEY, W. W, FELIX, C. L, SHERWIN, M. S, HOPKINS, P, SYBDARAM, M, GOSSARD, A. C

“…Intense radiation with photon energy of a few meV can induce the capture of electrons by DX centers in AlxGa1−xAs:Si…”
Get full text

Influence of phonon, geometry, impurity, and grain size on Copperline resistivity by Plombon, J. J., Andideh, Ebrahim, Dubin, Valery M., Maiz, Jose

“…The authors report on the resistivity of submicron copper lines ranging from 75 to 500 nm linewidths as a function of temperature in the 10 K to 380 K…”
Get full text

High-frequency electrical properties of individual and bundledcarbon nanotubes by Plombon, J. J., O'Brien, Kevin P., Gstrein, Florian, Dubin, Valery M., Jiao, Yang

“…Bundles of single wall carbon nanotubes have been proposed as an interconnect that could potentially replace copper in state-of-the-art…”
Get full text

All-Electrical Spin-to-Charge Conversion in Sputtered Bi x Se 1-x by Choi, Won Young, Arango, Isabel C., Pham, Van Tuong, Vaz, Diogo C., Yang, Haozhe, Groen, Inge, Lin, Chia-Ching, Kabir, Emily S., Oguz, Kaan, Debashis, Punyashloka, Plombon, John J., Li, Hai, Nikonov, Dmitri E., Chuvilin, Andrey, Hueso, Luis E., Young, Ian A., Casanova, Fèlix

“…One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it…”
Get full text

Demonstration of new planar capacitor (PCAP) vehicles to evaluate dielectrics and metal barrier thin films by Lin, Kevin L., Bielefeld, Jeffrey, Chawla, Jasmeet S., Carver, Colin T., Chebiam, Ramanan, Clarke, James S., Faber, Jacob, Harmes, Michael, Indukuri, Tejaswi, Jezewski, Christopher, Kasim, Rahim, Kobrinsky, Mauro, Kabir, Nafees A., Krist, Brian, Lakamraju, Narendra, Lang, Hazel, Mays, Ebony, Myers, Alan M., Plombon, John J., Singh, Kanwal Jit, Torres, Jessica, Yoo, Hui Jae

“…Planar capacitors can quickly test material properties of metals and dielectrics for interconnects. A sidewall capacitor device is used to evaluate metal…”
Get full text

Far-infrared second-harmonic generation in GaAs/AlxGa1-xAs heterostructures: Perturbative and nonperturbative response by Bewley, WW, Felix, CL, Plombon, JJ, Sherwin, MS, Sundaram, M, Hopkins, PF, Gossard, AC

Get full text

Wall angle measurement with a scanning probe microscope employing a one-dimensional force sensor by Griffith, J. E., Hopkins, L. C., Bryson, C. E., Berghaus, A., Snyder, E. J., Plombon, J. J., Vasilyev, L. A., Hecht, M., Bindell, J. B.

“…To measure the angle of a wall, the probe of a stylus profiler must be able to reach the wall. Sample tilting substantially expands the range of wall angles…”
Get full text