Search Results - "Pletschen, Wilfried"
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Reduced nonthermal rollover of wide-well GaInN light-emitting diodes
Published in Applied physics letters (26-01-2009)“…Nonthermal rollover (or efficiency droop) of the electroluminescence (EL) efficiency has been investigated for near-UV-emitting (AlGaIn)N single-well…”
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Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
Published in Japanese Journal of Applied Physics (01-04-2009)Get full text
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High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
Published in Japanese Journal of Applied Physics (01-08-2013)“…High-efficiency AlGaN-based 355 nm UV light-emitting diodes (LEDs) grown on low-dislocation-density AlGaN/sapphire templates with an output power of 9.8 mW…”
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GaN-based high-frequency devices and circuits: A Fraunhofer perspective
Published in Physica status solidi. A, Applications and materials science (01-03-2012)“…We present the current status of our technology for GaN‐based HEMTs and MMICs as well as results ranging from the L‐band up to the W‐band. Epitaxial growth is…”
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Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
Published in Journal of electronic materials (01-06-2010)“…Results from on-wafer electroluminescence (EL) microscopy on AlGaN/GaN high-electron-mobility transistors with leakage currents varying over four orders of…”
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Corrugated piezoelectric membranes for energy harvesting from aperiodic vibrations
Published in Sensors and actuators. A. Physical. (01-06-2013)“…In this work we report on non-resonant piezoelectric micro-energy-harvesters based on corrugated membranes made from aluminium nitride. These harvesters were…”
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Investigation of Leakage Current of AIGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
Published in Journal of electronic materials (2010)Get full text
Conference Proceeding -
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GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE
Published in IEEE transactions on electron devices (01-04-1992)Get full text
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