Search Results - "Plagwitz, H."

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  1. 1

    Analytical model for the diode saturation current of point-contacted solar cells by Plagwitz, H., Brendel, R.

    Published in Progress in photovoltaics (01-01-2006)
    “…Point‐contacted solar cells exhibit three‐dimensional transport effects due to a spatially inhomogeneous surface recombination. Complex multi‐dimensional…”
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    Journal Article
  2. 2

    Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells by Gatz, S., Plagwitz, H., Altermatt, P. P., Terheiden, B., Brendel, R.

    Published in Applied physics letters (27-10-2008)
    “…The thermal stability of amorphous silicon/silicon nitride double layer surface passivation of p -type and n + -type crystalline surfaces is investigated for…”
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    Journal Article
  3. 3

    Formation of mesoporous germanium double layers by electrochemical etching for layer transfer processes by Garralaga Rojas, E., Terheiden, B., Plagwitz, H., Hensen, J., Baur, C., Strobl, G.F.X., Brendel, R.

    Published in Electrochemistry communications (01-02-2010)
    “…We produce uniform mesoporous single- and multilayers on 4 in. p-type Ge wafers by means of electrochemical etching in highly concentrated HF-based…”
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    Journal Article
  4. 4

    Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6° off towards (111) by Garralaga Rojas, E., Terheiden, B., Plagwitz, H., Hensen, J., Wiedemeier, V., Berth, G., Zrenner, A., Brendel, R.

    Published in Thin solid films (31-10-2011)
    “…Uniform mesoporous Si double layers are formed on 4 inch p-type < 100> wafers with an off orientation of 6º towards < 111> by means of electrochemical etching…”
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    Journal Article
  5. 5

    Low-temperature formation of local Al contacts to a-Si:H-passivated Si wafers by Plagwitz, H., Nerding, M., Ott, N., Strunk, H. P., Brendel, R.

    Published in Progress in photovoltaics (01-01-2004)
    “…We have passivated boron‐doped, low‐resistivity crystalline silicon wafers on both sides by a layer of intrinsic, amorphous silicon (a‐Si:H). Local aluminum…”
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    Journal Article
  6. 6

    Back contact monocrystalline thin-film silicon solar cells from the porous silicon process by Haase, F., Horbelt, R., Terheiden, B., Plagwitz, H., Brendel, R.

    “…We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps…”
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    Conference Proceeding
  7. 7

    Analytical model for the optimization of locally contacted solar cells by Plagwitz, H., Schaper, M., Schmidt, J., Terheiden, B., Brendel, R.

    “…An empiric analytical model is presented that describes both, the diode saturation current j/sub 0/ and the dark series resistance R/sub s/ of the passivated…”
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    Conference Proceeding
  8. 8

    Stacked layers of InAs self-assembled quantum dots by Khorenko, V, Malzer, S, Plagwitz, H, Khorenko, E, Döhler, G.H

    “…Carrier injection and subsequent radiative recombination in two vertically stacked (but electronically only weakly coupled) layers of InAs/GaAs self-assembled…”
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    Journal Article Conference Proceeding
  9. 9

    20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation by Schaper, Martin, Schmidt, Jan, Plagwitz, Heiko, Brendel, Rolf

    Published in Progress in photovoltaics (01-08-2005)
    “…We have developed a crystalline silicon solar cell with amorphous silicon (a‐Si:H) rear‐surface passivation based on a simple process. The a‐Si:H layer is…”
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    Journal Article
  10. 10

    Lift-off of mesoporous layers by electrochemical etching on Si (100) substrates with miscut of 6 degree off towards (111) by Garralaga Rojas, E, Terheiden, B, Plagwitz, H, Hensen, J, Wiedemeier, V, Berth, G, Zrenner, A, Brendel, R

    Published in Thin solid films (31-10-2011)
    “…Uniform mesoporous Si double layers are formed on 4 inch p-type wafers with an off orientation of 6 super(o) towards by means of electrochemical etching in…”
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    Journal Article
  11. 11

    Formation of mesoporous gallium arsenide for lift-off processes by electrochemical etching by Rojas, E.G., Hampe, C., Plagwitz, H., Brendel, R.

    “…Monocrystalline, mesoporous GaAs double layers with controlled porosities are formed by means of electrochemical etching on p-type GaAs substrates using highly…”
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    Conference Proceeding
  12. 12
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