Search Results - "Pittikoun, S"

Improvement of Interpoly Dielectric Characteristics by Plasma Nitridation and Oxidation for Future nand Flash Memory by Ching Yuan Ho, Chenhsin Lien, Sakamoto, Y., Ru Jye Yang, Fijita, H., Liu, C.H., Lin, Y.M., Pittikoun, S., Aritome, S.

“…In this letter, plasma nitridation and oxidation on interpoly dielectric (IPD; SiO 2 -SiN-SiO 2 ) for cell programming speed and reliabilities are…”
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A highly reliable NAND structure flash memory capable for low voltage operation by Lin, Y.C., Lai, C.S., Chung, S.S., Yang, E., Pittikoun, S., Tzeng, S.-M., Hsu, C.C.-H.

“…For the first time, a new flash cell, called buried bit-line AND (BiAND), is proposed. Buried bit-line AND flash can achieve low voltage programming/erase. The…”
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Self-aligned shallow trench isolation recess effect on cell performance and reliability of 42nm NAND flash memory by Liu, C H, Lin, Y M, Shirota, R, Wei, H C, Kuo, L T, Liu, C Han, Chen, S H, Hwang, H P, Sakamoto, Y, Pittikoun, S

“…Self-aligned shallow trench isolation recess effect on 42 nm node NAND flash to achieve high performance and good reliability has been studied and…”
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A novel Multi - Nitridation ONO interpoly dielectric (MN-ONO) for highly reliable and high performance NAND Flash memory by Liu, C. H., Lin, Y. M., Sakamoto, Y., Yang, R. J., Yin, D. Y., Chiang, P. J., Wei, H. C., Ho, C. Y., Chen, S. H., Hwang, H. P., Hung, C. H., Pittikoun, S., Aritome, S.

“…Multi-Nitridation ONO has been demonstrated for the first time. Significant improvement are obtained in NAND Flash performance and reliability. (1) 1V program…”
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Improvement of Interpoly Dielectric Characteristics by Plasma Nitridation and Oxidation for Future @@inand@ Flash Memory by Ho, Ching Yuan, Lien, Chenhsin, Sakamoto, Y, Yang, Ru Jye, Fijita, H, Liu, C H, Lin, Y M, Pittikoun, S, Aritome, S

“…In this letter, plasma nitridation and oxidation on interpoly dielectric (IPD; SiO@@d2@-SiN-SiO@@d2@ ) for cell programming speed and reliabilities are…”
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Effect of Rapid Thermal Annealing in N 2 and Stacked Layer on SiO 2 –Al 2 O 3 –SiO 2 Characteristics for Interpoly Silicon Dielectrics by Ho, Ching Yuan, Lien, Chenhsin, Liu, C. H., Lin, Y. M., Pittikoun, S.

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Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory by Victor Chao-Wei Kuo, Chih-Ming Chao, Chih-Kai Kang, Li-Wei Liu, Tzung-Bin Huang, Liang-Tai Kuo, Shi-Hsien Chen, Houng-Chi Wei, Hann-Ping Hwang, Pittikoun, S.

“…In this paper, one of the future nonvolatile memory candidates, SONOS with p + -poly gate, has been fully characterized in cell program/erase operation and…”
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A New Read-Disturb Failure Mechanism Caused by Boosting Hot-Carrier Injection Effect in MLC NAND Flash Memory by Hsin-Heng Wang, Pei-Shan Shieh, Chiu-Tsung Huang, Tokami, K., Kuo, R., Shin-Hsien Chen, Houng-Chi Wei, Pittikoun, S., Aritome, S.

“…In this paper, we have reported a new failure phenomenon of read-disturb in MLC NAND flash memory caused by boosting hot-carrier injection effect. (1) The…”
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Bottom Nitridation Engineering of Multi-Nitridation ONO Interpoly Dielectric for Highly Reliable and High Performance NAND Flash Memory by Liu, C.H., Lin, Y.M., Yin, D.Y., Tseng, G.H., Liaw, H.W., Wei, H.C., Chen, S.H., Chao, C.M., Hwang, H.P., Pittikoun, S., Aritome, S.

“…The various methods of multi-nitridation ONO to improve NAND flash memory have been demonstrated in this paper. Excellent cell performance and reliability are…”
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A Study of Slow Erasing Speed at Edge Cell in Nano-Scale NAND Flash Memory by Hsin-Heng Wang, Chiu-Tsung Huang, Shin-Hsien Chen, Kuo, R., Sophia Liu, Ling-Kuey Yang, Houng-Chi Wei, Pittikoun, S., Shirota, R., Chin-chen Cho

“…In this paper, we present our study of a method to improve nonuniform erasing speeds caused by slow edge cells (cell 0 and cell 31). Simulation and measurement…”
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A New Self-Aligned NAND Type SONOS Flash Memory with High Scaling Abilities, Fast Programming/Erase Speeds and Good Data Retention Performances by Kuo, C.-W., Yang, E.C.-S., Wei-Zhe Wong, Chin-Ming Chao, Chih-Kai Kang, Li-Wei Liu, Tzung-Bin Huang, Liang-Tai Kuo, Shi-Hsien Chen, Houng-Chi Wei, Hann-Ping Hwang, Pittikoun, S.

“…In this paper, we will propose a new NAND type SONOS cell structure with high efficiency Source Side Injection programming and F-N erase. This cell is…”
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