Characterization of silicon gate oxides by conducting atomic force microscopy

Characteristics of the dielectric breakdown and the thickness homogeneity of silicon gate oxides have been investigated on the nanometre scale using conducting atomic force microscopy (C‐AFM). The I–V measurements in the Fowler– Nordheim tunnelling regime were applied in order to use C‐AFM as an exp...

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Bibliographic Details
Published in:	Surface and interface analysis Vol. 33; no. 2; pp. 168 - 172
Main Authors:	Kremmer, S., Teichert, C., Pischler, E., Gold, H., Kuchar, F., Schatzmayr, M.
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Chichester, UK John Wiley & Sons, Ltd 01-02-2002 Wiley
Subjects:	Applied sciences conducting atomic force microscopy dielectric breakdown Electronics Exact sciences and technology Fowler- Nordheim tunneling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Thickness Atomic force microscopy MOSFET Electric breakdown Voltage current curve Gate oxide Nanostructure Fowler Nordheim tunneling
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Summary:	Characteristics of the dielectric breakdown and the thickness homogeneity of silicon gate oxides have been investigated on the nanometre scale using conducting atomic force microscopy (C‐AFM). The I–V measurements in the Fowler– Nordheim tunnelling regime were applied in order to use C‐AFM as an experimental technique for the thickness determination of thin silicon gate oxides. Conducting AFM was used further to study dielectric breakdown with a lateral resolution below 100 nm. It was found that the accumulation of defects created by induced charges and a statistic path formation of these defects are the main mechanisms leading to dielectric breakdown. Copyright © 2002 John Wiley & Sons, Ltd.
Bibliography:	Österreichische National bank. ArticleID:SIA1183 ark:/67375/WNG-Z40NGZ1Z-4 Bundesministerium für Wissenschaft und Verkehr. istex:6F75ABBCACDC3DEAF39836A0DB00A7A10D0AAC37
ISSN:	0142-2421 1096-9918
DOI:	10.1002/sia.1183