Search Results - "Pisarczyk, K."

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    Filling the gap in CNS drug development: evaluation of the role of drug repurposing by Caban, A., Pisarczyk, K., Kopacz, K., Kapuśniak, A., Toumi, M., Rémuzat, C., Kornfeld, A.

    “…Background and objective: Background and objective: Drug repurposing has been considered a cost-effective and reduced-risk strategy for developing new drugs…”
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    Journal Article
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    CORRELATIONS BETWEEN BIOMARKERS AND CLINICAL OUTCOMES AMONG SELECT PRIMARY IMMUNE REGULATORY DISORDERS (PIRDS) by Harrington, A., Pisarczyk, K., Lopes, J. Matias, Rider, N., Beckerman, R.

    Published in Annals of allergy, asthma, & immunology (01-11-2024)
    “…PIRDs, a subset of inborn errors of immunity, are associated with genetic variants and characterized by autoimmunity, autoinflammation, and…”
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    Journal Article
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    Trends in Pragmatic Clinical Trials by Kloc, K, Pisarczyk, K, Lach, S, Rémuzat, C, Toumi, M

    Published in Value in health (01-10-2017)
    “…OBJECTIVES: Pragmatic clinical trials (PCTs) are gaining interest among decision-makers as transferability and generalisability of clinical trial results to…”
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    Journal Article
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    Improved Al/InP Schottky barriers by coimplantation of Be/P by TYAGI, R, CHOW, T. P, BORREGO, J. M, PISARCZYK, K. A

    Published in Applied physics letters (02-08-1993)
    “…Improved Al/InP Schottky barriers are formed on n-InP by using coimplantation of Be/P. The doped surface layer (Be) helps in retarding the surface fields,…”
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    Journal Article
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    Committee Report: Research Needs for the Treatment of Iron and Manganese by Robinson, R.B., Dart, F.J., Pisarczyk, K., Singer, P.C., Sung, W.

    Published in Journal - American Water Works Association (01-09-1987)
    “…Iron and manganese problems affect far more water systems than almost any other water quality concern. The committee that prepared this report believes there…”
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    Journal Article
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    Improved Al/InP Schottky barriers by coimplantation of Be/P by Tyagi, R., Chow, T.P., Borrego, J.M., Pisarczyk, K.A.

    “…The development of conventional InP MESFET technology is strongly hampered by the low barrier height (0.3-0.4eV) obtained in InP, due to surface Fermi level…”
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    Conference Proceeding