Search Results - "Piquette, E."

The Effect of Contact Resistance on Short Wavelength Infrared Focal Plane Array Noise by Piquette, E. C.

“…Contact resistance can play a significant role in the noise performance of short wavelength infrared (SWIR) focal plane detector arrays (FPAs), particularly…”
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High-Operating Temperature HgCdTe: A Vision for the Near Future by Lee, D., Carmody, M., Piquette, E., Dreiske, P., Chen, A., Yulius, A., Edwall, D., Bhargava, S., Zandian, M., Tennant, W. E.

“…We review recent advances in the HgCdTe material quality and detector performance achieved at Teledyne using molecular beam epitaxy growth and the double-layer…”
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Small-Pitch HgCdTe Photodetectors by Tennant, W. E., Gulbransen, D. J., Roll, A., Carmody, M., Edwall, D., Julius, A., Dreiske, P., Chen, A., McLevige, W., Freeman, S., Lee, D., Cooper, D. E., Piquette, E.

“…If we can make wavelength-sized detectors, we approach the limit at which smaller detectors have no further advantage for imaging focal plane arrays with…”
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Recent Progress in MBE Growth of CdTe and HgCdTe on (211)B GaAs Substrates by Carmody, M., Yulius, A., Edwall, D., Lee, D., Piquette, E., Jacobs, R., Benson, D., Stoltz, A., Markunas, J., Almeida, A., Arias, J.

“…Alternate substrates for molecular beam epitaxy growth of HgCdTe including Si, Ge, and GaAs have been under development for more than a decade. MBE growth of…”
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An assessment of multimodal imaging of subsurface text in mummy cartonnage using surrogate papyrus phantoms by Gibson, Adam, Piquette, Kathryn E., Bergmann, Uwe, Christens-Barry, William, Davis, Graham, Endrizzi, Marco, Fan, Shuting, Farsiu, Sina, Fitzgerald, Anthony, Griffiths, Jennifer, Jones, Cerys, Li, Guorong, Manning, Phillip L., Maughan Jones, Charlotte, Mazza, Roberta, Mills, David, Modregger, Peter, Munro, Peter R. T., Olivo, Alessandro, Stevenson, Alice, Venugopal, Bindia, Wallace, Vincent, Wogelius, Roy A., Toth, Michael B., Terras, Melissa

“…Ancient Egyptian mummies were often covered with an outer casing, panels and masks made from cartonnage: a lightweight material made from linen, plaster, and…”
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The Effects of Microvoid Defects on MWIR HgCdTe-Based Diodes by Billman, C. A., Almeida, L. A., Smith, P., Arias, J. M., Chen, A., Lee, D., Piquette, E. C.

“…The effects of microvoid defects on the performance of mid-wavelength infrared (MWIR) HgCdTe-based diodes were examined. Molecular beam epitaxy (MBE) was…”
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High voltage (450 V) GaN Schottky rectifiers by Bandić, Z. Z., Bridger, P. M., Piquette, E. C., McGill, T. C., Vaudo, R. P., Phanse, V. M., Redwing, J. M.

“…We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device…”
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Minority carrier diffusion length and lifetime in GaN by Bandić, Z. Z., Bridger, P. M., Piquette, E. C., McGill, T. C.

“…Electron beam induced current measurements on planar Schottky diodes on undoped GaN grown by metalorganic chemical vapor deposition are reported. The minority…”
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Electron diffusion length and lifetime in p -type GaN by Bandić, Z. Z., Bridger, P. M., Piquette, E. C., McGill, T. C.

“…We report on electron beam induced current and current–voltage (I–V) measurements on Schottky diodes on p-type doped GaN layers grown by metal organic chemical…”
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Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy by Piquette, E.C., Edwall, D.D., Arnold, H., Chen, A., Auyeung, J.

“…Removal of the CdZnTe substrate offers several performance benefits for near-infrared (NIR, 1.7  μ m) and short-wave infrared (SWIR, 2.5  μ m) focal-plane…”
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Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy by Bridger, P. M., Bandić, Z. Z., Piquette, E. C., McGill, T. C.

“…We have studied molecular beam epitaxy grown GaN films of both polarities using electric force microscopy to detect sub 1 μm regions of charge density…”
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Status of LWIR HgCdTe-on-Silicon FPA Technology by Carmody, M., Pasko, J.G., Edwall, D., Piquette, E., Kangas, M., Freeman, S., Arias, J., Jacobs, R., Mason, W., Stoltz, A., Chen, Y., Dhar, N.K.

“…The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because of…”
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Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion by PIQUETTE, E. C, EDWALL, D. D, LEE, D. L, ARIAS, J. M

“…Characterization data are presented for arsenic-doped Hg^sub 1-x^Cd^sub x^Te epilayers, grown on CdZnTe substrates by molecular beam epitaxy. Arsenic…”
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The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices by Bandić, Z.Z, Bridger, P.M, Piquette, E.C, McGill, T.C

“…The wide bandgap semiconductors GaN and AlGaN show promise as the high voltage standoff layers in high power heterostructure bipolar transistors and thyristors…”
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HgCdTe negative luminescence devices for cold shielding and other applications by LINDLE, J. R, BEWLEY, W. W, VURGAFTMAN, I, MEYER, J. R, JOHNSON, J. L, THOMAS, M. L, PIQUETTE, E. C, TENNANT, W. E, SMITH, E. P, JOHNSON, S. M

“…Negative luminescence (NL) refers to the suppression of infrared blackbody emission, and hence an apparent temperature reduction, due to free carrier…”
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Accurate measurement of composition, carrier concentration, and photoconductive lifetime in Hg1-xCdxTe grown by molecular beam epitaxy by SWARTZ, C. H, CHANDRIL, S, TOMPKINS, R. P, GILES, N. C, MYERS, T. H, EDWALL, D. D, PIQUETTE, E. C, KIM, C. S, VURGAFTMAN, I, MEYER, J. R

“…Variable magnetic field Hall and transient photoconductance lifetime measurements were performed on a series of undoped, In-doped, and As-doped HgCdTe samples…”
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Optical-absorption model for molecular-beam epitaxy HgCdTe and application to infrared detector photoresponse by MOAZZAMI, K, PHILLIPS, J, LEE, D, EDWALL, D, CARMODY, M, PIQUETTE, E, ZANDIAN, M, ARIAS, J

“…Accurate knowledge of the optical-absorption coefficient in HgCdTe is important for infrared (IR) detector design, production process (layer screening), and…”
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MBE growth of HgCdTe epilayers with reduced visible defect densities: kinetics considerations and substrate limitations by PIQUETTE, E. C, ZANDIAN, M, EDWALL, D. D, ARIAS, J. M

“…A semi-empirical constraint to the thermodynamical model for growth of Hg1−xCdxTe (MCT) by molecular beam epitaxy is described. This constraint, derived by…”
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Molecular beam epitaxy growth of high-quality arsenic-doped HgCdTe by EDWALL, D, PIQUETTE, E, ELLSWORTH, J, ARIAS, J, SWARTZ, C. H, BAI, L, TOMPKINS, R. P, GILES, N. C, MYERS, T. H, BERDING, M

“…We have initiated a joint effort to better elucidate the fundamental mechanisms underlying As-doping in molecular beam epitaxy (MBE)-grown HgCdTe. We have…”
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MCT-on-silicon negative luminescence devices with high efficiency by LINDLE, J. R, BEWLEY, W. W, VURGAFTMAN, I, MEYER, J. R, THOMAS, M. L, TENNANT, W. E, EDWALL, D. D, PIQUETTE, E

“…We used an InSb radiometric thermal imager to characterize the performance of 1'' × 1'' negative luminescent (NL) arrays. The devices grown on both CdZnTe (two…”
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