Search Results - "Piper, L. F. J."
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Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide
Published in Physical review letters (15-01-2016)“…We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped…”
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Nature of the Metal Insulator Transition in Ultrathin Epitaxial Vanadium Dioxide
Published in Nano letters (09-10-2013)“…We have combined hard X-ray photoelectron spectroscopy with angular dependent O K-edge and V L-edge X-ray absorption spectroscopy to study the electronic…”
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Origin of the Bipolar Doping Behavior of SnO from X‑ray Spectroscopy and Density Functional Theory
Published in Chemistry of materials (13-08-2013)“…The origin of the almost unique combination of optical transparency and the ability to bipolar dope tin monoxide is explained using a combination of soft and…”
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Experimental and Theoretical Study of the Electronic Structures of Lanthanide Indium Perovskites LnInO3
Published in Journal of physical chemistry. C (25-03-2021)“…Ternary lanthanide indium oxides LnInO3 (Ln = La, Pr, Nd, Sm) were synthesized by high-temperature solid-state reaction and characterized by X-ray powder…”
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Role of lone pair electrons in determining the optoelectronic properties of BiCuOSe
Published in Physical review. B, Condensed matter and materials physics (16-02-2012)“…The electronic structure of the oxychalcogenides LaCuOSe and BiCuOSe has been studied using O K-edge x-ray emission spectroscopy, x-ray absorption…”
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Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy
Published in Physical review letters (08-12-2006)“…Electron accumulation states in InN have been measured using high resolution angle-resolved photoemission spectroscopy (ARPES). The electrons in the…”
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Nature of the band gap of In2O3 revealed by first-principles calculations and x-ray spectroscopy
Published in Physical review letters (25-04-2008)“…Bulk and surface sensitive x-ray spectroscopic techniques are applied in tandem to show that the valence band edge for In2O3 is found significantly closer to…”
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La-doped BaSnO3—Degenerate perovskite transparent conducting oxide: Evidence from synchrotron x-ray spectroscopy
Published in Applied physics letters (22-07-2013)“…We report direct evidence of conduction band filling in 3% La-doped BaSnO3 using hard x-ray photoelectron spectroscopy. Direct comparisons with hybrid density…”
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Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level
Published in APL materials (01-02-2019)“…The surface electronic properties of bulk-grown β-Ga2O3 (2¯01) single crystals are investigated. The band gap is found using optical transmission to be 4.68…”
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Bi-induced band gap reduction in epitaxial InSbBi alloys
Published in Applied physics letters (24-11-2014)“…The properties of molecular beam epitaxy-grown InSb1−xBix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases…”
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Origin of deep subgap states in amorphous indium gallium zinc oxide: Chemically disordered coordination of oxygen
Published in Applied physics letters (09-06-2014)“…The origin of the deep subgap states in amorphous indium gallium zinc oxide (a-IGZO), whether intrinsic to the amorphous structure or not, has serious…”
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Experimental and Theoretical Study of the Electronic Structures of Lanthanide Indium Perovskites LnInO 3
Published in Journal of physical chemistry. C (25-03-2021)“…Ternary lanthanide indium oxides LnInO (Ln = La, Pr, Nd, Sm) were synthesized by high-temperature solid-state reaction and characterized by X-ray powder…”
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The nature of electron lone pairs in BiVO4
Published in Applied physics letters (23-05-2011)“…The electronic structure of BiVO4 has been studied by x-ray photoelectron, x-ray absorption, and x-ray emission spectroscopies, in comparison with density…”
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Observation of an inverted band structure near the surface of InN
Published in Europhysics letters (01-08-2008)“…The dispersion of the valence band within the electron accumulation layer of n-type InN$(000\bar {1})$ has been directly measured using angle-resolved…”
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The local electronic structure of tin phthalocyanine studied by resonant soft X-ray emission spectroscopies
Published in Applied surface science (30-11-2008)“…The electronic structure of thin films of the organic semiconductor tin phthalocyanine (SnPc) has been investigated by resonant and non-resonant soft X-ray…”
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Origin of the n-type conductivity of InN: The role of positively charged dislocations
Published in Applied physics letters (19-06-2006)“…As-grown InN is known to exhibit high unintentional n-type conductivity. Hall measurements from a range of high-quality single-crystalline epitaxially grown…”
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Electronic Structure of C60/Phthalocyanine/ITO Interfaces Studied using Soft X-ray Spectroscopies
Published in Journal of physical chemistry. C (04-02-2010)“…The interface electronic structure of a bilayer heterojunction of C60 and three different phthalocyanines grown on indium tin oxide (ITO) has been studied…”
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Growth of dilute nitride alloys of GaInSb lattice-matched to GaSb
Published in Journal of crystal growth (15-06-2007)“…The growth of dilute nitride alloys of GaInSb by plasma-assisted molecular beam epitaxy is reported. The principle of lattice matching GaInNSb alloys to GaSb(0…”
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Origin of electron accumulation at wurtzite InN surfaces
Published in Physical review. B, Condensed matter and materials physics (01-05-2004)Get full text
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