Search Results - "Pinpin Yan"

Design of a 60 GHz Slot Filtenna Array Using Gap Waveguide Feed Network by Chen, Chao, Chen, Jixin, Yan, Pinpin, Wen, Letian, Hong, Wei

“…In this letter, a three-stage high-efficiency filtenna using the gap waveguide (GWG) technology is first proposed for 60 GHz applications. It is based on the…”
Get full text

An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range by Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Yu, Jiayang, Hou, Debin, Gao, Hao, Hong, Wei

“…This paper presents a monolithically integrated E-band amplifier multiplier chain (AMC) developed in 130 nm SiGe BiCMOS process. This E-band AMC is composed of…”
Get full text

A 300-GHz Transmitter Front End With −4.1-dBm Peak Output Power for Sub-THz Communication Using 130-nm SiGe BiCMOS Technology by Yu, Jiayang, Chen, Jixin, Zhou, Peigen, Li, Zekun, Li, Huanbo, Yan, Pinpin, Hou, Debin, Hong, Wei

“…This article presents a compact 300-GHz transmitter front end manufactured in a 130-nm SiGe BiCMOS process. The transmitter consists of a 240-GHz amplifier…”
Get full text

A compact multilayer substrate integrated waveguide quasi‐elliptic bandpass filter for millimeter‐wave applications by Zhang, Zhiyuan, Zhu, Yuanwei, Zhang, Zijian, Yan, Pinpin

“…A multilayer substrate integrated waveguide (SIW) quasi‐elliptic bandpass filter based on the printed circuit board (PCB) process is presented for…”
Get full text

A 150-GHz Transmitter With 12-dBm Peak Output Power Using 130-nm SiGe:C BiCMOS Process by Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Yu, Jiayang, Li, Huanbo, Hou, Debin, Gao, Hao, Hong, Wei

“…This article presents a compact 150-GHz transmitter with 12-dBm <inline-formula> <tex-math notation="LaTeX">P_{\mathrm{ sat}} </tex-math></inline-formula> and…”
Get full text

W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication by Li, Huanbo, Chen, Jixin, Hou, Debin, Li, Zekun, Zhou, Rui, Chen, Zhe, Yan, Pinpin, Hong, Wei

“…This article presents a pair of W-band phased-array transmitter (TX) and receiver (RX) chipsets in a 0.13-<inline-formula> <tex-math notation="LaTeX">\mu…”
Get full text

Full-Angle Digital Predistortion of 5G Millimeter-Wave Massive MIMO Transmitters by Yu, Chao, Jing, Jianxin, Shao, Han, Jiang, Zhi Hao, Yan, Pinpin, Zhu, Xiao-Wei, Hong, Wei, Zhu, Anding

“…In this paper, a full-angle digital predistortion (DPD) technique is proposed to linearize fifth-generation (5G) millimeter-wave (mmWave) massive…”
Get full text

A −28.5-dB EVM 64-QAM 45-GHz Transceiver for IEEE 802.11aj by Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Yu, Jiayang, Hu, Jiarui, Dong, Haoyi, Wang, Long, Hou, Debin, Gao, Hao, Hong, Wei

“…This article presents a fully integrated IEEE 802.11aj direct-conversion transceiver system in a 120-nm SiGe:C BiCMOS technology. The system includes a…”
Get full text

A 211-to-263-GHz Dual- LC -Tank-Based Broadband Power Amplifier With 14.7-dBm P SAT and 16.4-dB Peak Gain in 130-nm SiGe BiCMOS by Yu, Jiayang, Chen, Jixin, Zhou, Peigen, Li, Huanbo, Wang, Zuojun, Li, Zekun, Chen, Zhe, Yan, Pinpin, Hou, Debin, Gao, Hao, Hong, Wei

“…This article presents a broadband sub-terahertz (THz) power amplifier (PA) with a low-loss four-way power combiner. The proposed power combiner consists of an…”
Get full text

A 220-GHz Power Amplifier With 22.5-dB Gain and 9-dBm P sat in 130-nm SiGe by Li, Zekun, Chen, Jixin, Li, Huanbo, Wang, Zuojun, Hou, Debin, Yan, Pinpin, Chen, Zhe, Hong, Wei

Get full text

A 250-GHz Differential SiGe Amplifier With 21.5-dB Gain for Sub-THz Transmitters by Li, Huanbo, Chen, Jixin, Hou, Debin, Zhou, Peigen, Yu, Jiayang, Yan, Pinpin, Peng, Lin, Lu, Haiyan, Hong, Wei

“…This article presents a 250-GHz SiGe amplifier composed of three differential cascode stages in a 0.13- μ m SiGe BiCMOS technology ( f T / f MAX = 300/500…”
Get full text

Transformer matched gilbert mixer with active balun for D band transmitter by Yu, Jiayang, Chen, Jixin, Li, Huanbo, Zhou, Peigen, Hou, Debin, Hong, Wei, Yan, Pinpin

“…A Gilbert mixer for the application of a D band transmitter is presented. In the work, the differential pair below the mixing quad is replaced by an active…”
Get full text

A 273.5-312-GHz Signal Source With 2.3 dBm Peak Output Power in a 130-nm SiGe BiCMOS Process by Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Chen, Zhe, Hou, Debin, Hong, Wei

“…This article presents a 300-GHz signal source that consists of a 75-GHz voltage controlled oscillator (VCO), a static frequency divider-by-two circuit, a…”
Get full text

SIW Cavity-Fed Filtennas for 5G Millimeter-Wave Applications by Lu, Rong, Yu, Chao, Wu, Fan, Yu, Zhiqiang, Zhu, Liyu, Zhou, Jianyi, Yan, Pinpin, Hong, Wei

“…In this article, novel millimeter-wave (mmWave) filtennas (filtering antennas) are proposed to realize compact size and low insertion loss for 5G applications…”
Get full text

A 77 GHz Power Amplifier with 19.1 dBm Peak Output Power in 130 nm SiGe Process by Zhou, Peigen, Yan, Pinpin, Chen, Jixin, Chen, Zhe, Hong, Wei

“…This article reports a two-stage differential structure power amplifier based on a 130 nm SiGe process operating at 77 GHz. By introducing a tunable capacitor…”
Get full text

A 40–50 GHz RF Front-End with Integrated Local Oscillator Leakage Calibration by Zhou, Peigen, Yan, Pinpin, Chen, Jixin, Chen, Zhe, Hong, Wei

“…This article presents a transmitter (TX) front-end operating at frequencies covering 40–50 GHz, including a differential quadrature mixer with integrated…”
Get full text

A W-Band Transformer-Based Power Amplifier with Anti-Pair Capacitors in 0.13-μm SiGe BiCMOS by Li, Huanbo, Chen, Jixin, Hou, Debin, Yan, Pinpin, Hong, Wei

“…This paper presents a W-band three-stage amplifier using 0.13-μm SiGe BiCMOS process, which is implemented with transformers for inter-stage matching and…”
Get full text

A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology by Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Hou, Debin, Gao, Hao, Hong, Wei

“…This letter describes an ultrabroadband power amplifier (PA) in a 130-nm SiGe:C BiCMOS technology. To achieve this broadband while keeping a compact chip size,…”
Get full text

A low power, high sensitivity SiGe HBT static frequency divider up to 90 GHz for millimeter-wave application by Zhou, Peigen, Chen, Jixin, Yan, Pinpin, Hou, Debin, Hong, Wei

“…A layout and connection optimization for static frequency divider is presented. The layout optimization provides a new circle topology transistors placement…”
Get full text

Research on Silicon‐Based Terahertz Communication Integrated Circuits by ZHOU, Peigen, CHEN, Jixin, TANG, Siyuan, YU, Jiayang, WANG, Chen, LI, Huanbo, LU, Haiyan, YAN, Pinpin, HOU, Debin, CHEN, Zhe, HONG, Wei

“…With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the…”
Get full text