Search Results - "Pinnow, C. U."

Characteristics of an Oxygen Barrier Based on Bi-layered Ir by Moon, B. K., Arisumi, O., Bruchhaus, R., Tsutsumi, K., Itokawa, H., Hornik, K., Tsuchiya, T., Hilliger, A., Lian, J., Pinnow, C. U., Ozaki, T., Kunishima, I., Nagel, N., Yamakawa, K., Beitel, G.

“…For high-density ferroelectric random access memory devices (FeRAMs) with capacitor over plug (COP) structure, oxygen diffusion barriers based on bi-layered Ir…”
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Oxygen Diffusion Barriers for High-Density FeRAMs by Moon, B. K., Pinnow, C. U., Imai, K., Arisumi, O., Itokawa, H., Hornik, K., Tsutsumi, K., Hilliger, A., Kunishima, I., Nagel, N., Yamakawa, K., Beitel, G.

“…For high-density ferroelectric random access memories (FeRAMs) with capacitor over plug (COP) structure, oxygen diffusion barriers have been investigated. This…”
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Conductive bridging RAM (CBRAM): an emerging non-volatile memory technology scalable to sub 20nm by Kund, M., Beitel, G., Pinnow, C.-U., Rohr, T., Schumann, J., Symanczyk, R., Ufert, K.-D., Muller, G.

“…We report on the electrical characterisation of nanoscale conductive bridging memory cells, composed of a thin solid state electrolyte layer sandwiched between…”
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Nanocrystallization of amorphous-Ta40Si14N46 diffusion barrier thin films by Bicker, M., Pinnow, C.-U., Geyer, U., Schneider, S., Seibt, M.

“…The nanocrystallization process in thin amorphous-Ta40Si14N46 films, annealed in the range between 800 and 1000 °C for 1 h, is investigated by high-resolution…”
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Nanocrystallization of amorphous-Ta{sub 40}Si{sub 14}N{sub 46} diffusion barrier thin films by Bicker, M., Pinnow, C.-U., Geyer, U., Schneider, S., Seibt, M.

“…The nanocrystallization process in thin amorphous-Ta{sub 40}Si{sub 14}N{sub 46} films, annealed in the range between 800 and 1000{degree}C for 1 h, is…”
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Emerging non-volatile memory technologies by Muller, G., Nagel, N., Pinnow, C.-U., Rohr, T.

“…The concept, the status and the respective challenges of the emerging non-volatile memory technologies are described. After discussing the magneto-resistive…”
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Preparation and properties of dc-sputtered IrO 2 and Ir thin films for oxygen barrier applications in advanced memory technology by Pinnow, C. U., Kasko, I., Dehm, C., Jobst, B., Seibt, M., Geyer, U.

“…IrO 2 and Ir thin films have been deposited by dc sputtering in Ar/O 2 - and pure Ar atmospheres, respectively. The microstructural characterization of the…”
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Preparation and properties of dc-sputtered IrO sub(2) and Ir thin films for oxygen barrier applications in advanced memory technology by Pinnow, C U, Kasko, I, Dehm, C, Jobst, B, Seibt, M, Geyer, U

“…A study of properties and preparation of thin films of IrO sub(2) and Ir deposited by dc sputtering was made for oxygen barrier applications in advanced memory…”
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