Search Results - "Pinizzotto, R.F."

Synthesis and Characterization of Discrete Luminescent Erbium-Doped Silicon Nanocrystals by St. John, John, Coffer, Jeffery L, Chen, Yandong, Pinizzotto, Russell F

“…The preparation of discrete erbium-doped silicon nanoparticles prepared by the co-pyrolysis of disilane and the volatile complex Er(tmhd)3 (tmhd =…”
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Composite TiSi2/n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology by Wang, K.L., Holloway, T.C., Pinizzotto, R.F., Sobczak, Z.P., Hunter, W.R., Tasch, A.F.

“…A composite polycide structure consisting of refractory metal silicide film on top of polysilicon has been considered as a replacement for polysilicon as a…”
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Microstructural analysis of nickel silicide formed by nickel/silicon-on-oxide annealing by YANG, H, PINIZZOTTO, R. F, LUO, L, NAMAVAR, F

“…Microstructures of crystalline nickel disilicide thin films formed on SIMOX (separation by implantation of oxygen) Si-on-oxide substrates were analyzed using…”
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Surface characterization of amalgams using X-ray photoelectron spectroscopy by Hanawa, T, Takahashi, H, Ota, M, Pinizzotto, R F, Ferracane, J L, Okabe, T

“…This study is the first to report on the use of x-ray photoelectron spectroscopy (XPS or ESCA) for studying the surface films (less than 10 nm thick) of aged…”
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An examination of the interfacial interactions between quantum-confined cadmium sulfide clusters and aminocalixarene stabilizer molecules by Coffer, Jeffery L., Chandler, Robin R., Gutsche, C. David, Alam, Iftikhar, Pinizzoto, Russell F., Yang, Hong

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Composite TiSi/sub 2//n+ Poly-Si Low-Resistivity Gate Electrode and Interconnect for VLSI Device Technology by Wang, K.L., Holloway, T.C., Pinizzotto, R.F., Sobczak, Z.P., Hunter, W.R., Tasch, A.F.

“…A composite polycide structure consisting of refractory metal silicide film on top of polysilicon has been considered as a replacement for polysilicon as a…”
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Composite TiSi 2 /n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology by Wang, K.L., Holloway, T.C., Pinizzotto, R.F., Sobczak, Z.P., Hunter, W.R., Tasch, A.F.

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Stacked CMOS SRAM cell by Chen, C.-E., Lam, H.W., Malhi, S.D.S., Pinizzotto, R.F.

“…A static random access memory (SRAM) cell with cross-coupled stacked CMOS inverters is demonstrated for the first time. In this approach, CMOS inverters are…”
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VB-3 stacked CMOS sRAM cell by Chen, C.-E., Lam, H.W., Malhi, S.D.S., Pinizzotto, R.F.

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Device fabrication in silicon-on-oxide produced by a scanning CW-laser-induced lateral seeding technique by Hon Wai Lam, Sobczak, Z.P., Pinizzotto, R.F., Tasch, A.F.

“…By using a CW-laser-beam-induced lateral seeding technique, which is a zone-melting crystal-growth process, single-crystal silicon-on-oxide with {100}…”
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Thermal annealing behavior of an oxide layer under silicon by Hamdi, A. H., McDaniel, F. D., Pinizzotto, R. F., Matteson, S., Lam, H. W., Malhi, S. D. S.

“…High resolution Rutherford backscattering spectrometry and ion channeling have been employed to evaluate the crystallinity of the surface silicon layer in…”
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Novel SOI CMOS design using ultra thin near intrinsic substrate by Malhi, S.D.S., Lam, H.W., Pinizzotto, R.F., Hamdi, A.H., McDaniel, F.D.

“…A novel SOI CMOS design has been explored. It utilizes an ultra thin near intrinsic substrate wherein no channel doping is introduced during processing. The…”
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VB-1 a VLSI suitable 2-µm stacked CMOS process by Malhi, S.D.S., Karnaugh, R., Shah, A.H., Hite, L., Chatterjee, P.K., Davis, H.E., Mahant-Shetti, S.S., Gosmeyer, C.D., Sundaresan, R.S., Chen, C.E., Lam, H.W., Haken, R.A., Pinizzotto, R.F., Hester, R.K.

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MOSFETs Fabricated in single crystal silicon-on-oxide obtained by a laser-induced lateral seeding technique by Lam, H.W., Sobczak, Z.B., Pinizzotto, R.F., Tasch, A.F.

“…By using a modified LOCOS oxidation process, a 1 µm thick layer of SiO 2 was grown on selected areas of a {100} silicon wafer such that the resulting oxide…”
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Effect of implantation energy on surface pitting of SIMOX by Namavar, F., Cortesi, E., Manke, J.M., Kalkhoran, N.M., Buchanan, B.L., Pinizzotto, R.F., Yang, H.

“…A systematic study to determine the effect of dose and dose rate on implanting oxygen at 80 and 160 keV is reported. Samples were produced by implanting oxygen…”
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p-Channel MOSFET's in LPCVD PolySilicon by Malhi, S.D.S., Chatterjee, P.K., Pinizzotto, R.F., Lam, H.W., Chen, C.E.C., Shichijo, H., Shah, R.R., Bellavance, D.W.

“…p-channel MOSFET's have been fabricated in LPCVD polysilicon. A 5000-Å n + poly acts as the gate electrode on which a 500-Å thermal oxide is grown to act as…”
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Edge-defined self-alignment of submicrometer overlaid devices by Malhi, S.D.S., Chatterjee, P.K., Bonifield, T.D., Leiss, J.E., Carter, D.E., Pinizzotto, R.F., Coleman, D.J.

“…A novel device structure for self-aligning the overlaid device in a stacked CMOS process is introduced and demonstrated. The structure allows submicrometer…”
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SOI CMOS circuit performance on graphite strip heater recrystallized material by Malhi, S.D.S., Lam, H.W., Pinizzotto, R.F.

“…A CMOS process has been implemented on graphite strip heater recrystallized silicon substrates. The low field electron mobility of 660 cm 2 /V.sec and hole…”
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Composite TiSi2/n+ poly-Si low resistivity gate electrode and interconnect for VLSI device technology by Wang, K.L., Holloway, T.C., Pinizzotto, R.F., Sobczak, Z.P., Hunter, W.R., Tasch, A.F.

“…A composite polycide structure consisting of coevaporated TiSi 2 film on top of polysilicon is studied as a replacement for polysilicon as gate electrode and…”
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The dependence of the activation energies of intermetallic formation on the composition of composite Sn/Pb solders by Pinizzotto, R.F., Jacobs, E.G., Wu, Y., Sees, J.A., Foster, L.A., Pouraghabagher, C.

“…The kinetics of the growth of Cu/Sn intermetallics at composite solder/Cu substrate interfaces is examined. The composite solders consist of a eutectic Sn/Pb…”
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